2002 |
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Vahtomin YB, Finkel MI, Antipov SV, Voronov BM, Smirnov KV, Kaurova NS, et al. Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si. In: Harvard university, editor. Proc. 13th Int. Symp. Space Terahertz Technol. Cambridge, MA, USA; 2002. p. 259–70.
Abstract: We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.
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2001 |
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Antipov SV, Svechnikov SI, Smirnov KV, Vakhtomin YB, Finkel MI, Goltsman GN, et al. Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz. Physics of Vibrations. 2001;9(4):242–5.
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Cherednichenko S, Kroug M, Merkel H, Kollberg E, Loudkov D, Smirnov K, et al. Local oscillator power requirement and saturation effects in NbN HEB mixers. In: Jet Propulsion Laboratory CIit.u.t.e of T, editor. Proc. 12th Int. Symp. Space Terahertz Technol. San Diego, CA, USA; 2001. p. 273–85.
Abstract: The local oscillator power required for NbN hot-electron bolometric mixers (P LO ) was investigated with respect to mixer size, critical temperature and ambient temperature. P LO can be decreased by a factor of 10 as the mixer size decreases from 4×0.4 µm 2 to 0.6×0.13 µm 2 . For the smallest volume mixer the optimal local oscillator power was found to be 15 nW. We found that for such mixer no signal compression was observed up to an input signal of 2 nW which corresponds to an equivalent input load of 20,000 K. For a constant mixer volume, reduction of T c can decrease optimal local oscillator power at least by a factor of 2 without a deterioration of the receiver noise temperature. Bath temperature was found to have minor effect on the receiver characteristics.
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Hübers H-W, Semenov AD, Richter H, Schubert J, Hadjiloucas S, Bowen JW, et al. Antenna pattern of the quasi-optical hot-electron bolometric mixer at terahertz frequencies. In: Proc. 12th Int. Symp. Space Terahertz Technol. San Diego, CA, USA; 2001. p. 286–96.
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Hübers H-W, Schubert J, Krabbe A, Birk M, Wagner G, Semenov A, et al. Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies. Infrared Physics & Technology. 2001;42(1):41–7.
Abstract: Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz.
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Kawamura J, Tong C-YE, Blundell R, Papa DC, Hunter TR, Patt F, et al. Terahertz-frequency waveguide NbN hot-electron bolometer mixer. IEEE Trans Appl Supercond. 2001;11(1):952–4.
Abstract: We have developed a low-noise waveguide heterodyne receiver for operation near 1 THz using phonon-cooled NbN hot-electron bolometers. The mixer elements are submicron-sized microbridges of 4 nm-thick NbN film fabricated on a quartz substrate. Operating at a bath temperature of 4.2 K, the double-sideband receiver noise temperature is 760 K at 1.02 THz and 1100 K at 1.26 THz. The local oscillator is provided by solid-state sources, and power measured at the source is less than 1 /spl mu/W. The intermediate frequency bandwidth exceeds 2 GHz. The receiver was used to make the first ground-based heterodyne detection of a celestial spectroscopic line above 1 THz.
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Kroug M, Cherednichenko S, Merkel H, Kollberg E, Voronov B, Gol'tsman G, et al. NbN hot electron bolometric mixers for terahertz receivers. IEEE Trans Appl Supercond. 2001;11(1):962–5.
Abstract: Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two.
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Svechnikov SI, Antipov SV, Vakhtomin YB, Goltsman GN, Gershenzon EM, Cherednichenko SI, et al. Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers. Physics of Vibrations. 2001;9(3):205–10.
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Yagoubov P, Hübers H-W, Gol’tsman G, Semenov A, Gao J, Hoogeveen R, et al. Hot-electron bolometer mixers – technology for far-infrared heterodyne instruments in future atmospheric chemistry missions. In: Buehler S, Berlin, editors. Proc. 3rd Int. Symp. Submillimeter Wave Earth Observation From Space. Logos-Verlag; 2001. p. 57–69.
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2000 |
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Cherednichenko S, Kroug M, Yagoubov P, Merkel H, Kollberg E, Yngvesson KS, et al. IF bandwidth of phonon cooled HEB mixers made from NbN films on MgO substrates. In: Proc. 11th Int. Symp. Space Terahertz Technol.; 2000. p. 219–27.
Abstract: An investigation of gain and noise bandwidth of phonon-cooled hot-electron bolometric (HEB) mixers is presented. The radiation coupling to the mixers is quasioptical through either a spiral or twin-slot antenna. A maximum gain bandwidth of 4.8 GHz is obtained for mixers based on a 3.5 nm thin NbN film with Tc= 10 K. The noise bandwidth is 5.6 GHz, at the moment limited by parasitic elements in the, device mount fixture. At 0.65 THz the DSB receiver noise temperature is 700-800 К in the IF band 1-2 GHz, and 1150-2700 К in the band 3.5-7 GHz.
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