Abstract: he generation, manipulation and detection of quantum bits (qubits) encoded on single photons is at the heart of quantum communication and optical quantum information processing. The combination of single-photon sources, passive optical circuits and single-photon detectors enables quantum repeaters and qubit amplifiers, and also forms the basis of all-optical quantum gates and of linear-optics quantum computing. However, the monolithic integration of sources, waveguides and detectors on the same chip, as needed for scaling to meaningful number of qubits, is very challenging, and previous work on quantum photonic circuits has used external sources and detectors. Here we propose an approach to a fully-integrated quantum photonic circuit on a semiconductor chip, and demonstrate a key component of such circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (20%) at telecom wavelengths, high timing accuracy (60 ps), response time in the ns range, and are fully compatible with the integration of single-photon sources, passive networks and modulators.

Abstract: A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered.

Abstract: We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise.

Abstract: We demonstrate a photon-number-resolving (PNR) detector, based on parallel superconducting nanowires, capable of resolving up to 5 photons in the telecommunication wavelength range, with sensitivity and speed far exceeding existing approaches.

Abstract: Novel single-photon detectors based on NbN superconducting nanostructures promise orders-of- magnitude improvement over InGaAs APDs. We demonstrate this improved performance for the first time by measuring the g(2)(τ) on single photon states produced by a quantum dot at telecom wavelength.