2013 |
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Kardakova A, Finkel M, Morozov D, Kovalyuk V, An P, Dunscombe C, et al. The electron-phonon relaxation time in thin superconducting titanium nitride films. Appl Phys Lett. 2013;103(25):252602 (1 to 4).
Abstract: We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.
The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159.
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2012 |
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Rasulova GK, Brunkov PN, Pentin IV, Egorov AY, Knyazev DA, Andrianov AV, et al. A weakly coupled semiconductor superlattice as a potential for a radio frequency modulated terahertz light emitter. Appl Phys Lett. 2012;100(13):131104 (1 to 4).
Abstract: The bolometer response to THz radiation from a weakly coupled GaAs/AlGaAs superlattice biased in the self-oscillations regime has been observed. The bolometer signal is modulated with the frequency equal to the fundamental frequency of superlattice self-oscillations. The frequency spectrum of the bolometer signal contains higher harmonics whose frequency is a multiple of fundamental frequency of self-oscillations.
This work was supported by State Contracts Nos. 16.740.11.0044 and 16.552.11.7002 of Ministry of Education and Science of the Russian Federation. Structural characterization was made on the equipment of the Joint Research Centre «Material science and characterization in advanced technology» (Ioffe Institute, St. Petersburg, Russia).
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Swetz DS, Bennett DA, Irwin KD, Schmidt DR, Ullom JN. Current distribution and transition width in superconducting transition-edge sensors. Appl Phys Lett. 2012;101:242603.
Abstract: Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition.
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2011 |
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Tretyakov I, Ryabchun S, Finkel M, Maslennikova A, Kaurova N, Lobastova A, et al. Low noise and wide bandwidth of NbN hot-electron bolometer mixers. Appl Phys Lett. 2011;98:033507 (1 to 3).
Abstract: We report a record double sideband noise temperature of 600 K (5hν/kB) offered by a NbN hot-electron bolometer receiver at 2.5 THz. Allowing for standing wave effects, this value was found to be constant in the intermediate frequency range 1–7 GHz, which indicates that the mixer has an unprecedentedly large noise bandwidth in excess of 7 GHz. The insight into this is provided by gain bandwidth measurements performed at the superconducting transition. They show that the dependence of the bandwidth on the mixer length follows the model for an HEB mixer with diffusion and phonon cooling of the hot electrons.
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2010 |
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Elvira D, Michon A, Fain B, Patriarche G, Beaudoin G, Robert-Philip I, et al. Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm. Appl Phys Lett. 2010;97(13):131907 (1 to 3).
Abstract: By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364.
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Kataoka T, Kajikawa K, Kitagawa J, Kadoya Y, Takemura Y. Improved sensitivity of terahertz detection by GaAs photoconductive antennas excited at 1560 nm. Appl Phys Lett. 2010;97:201110 (1–3).
Abstract: The terahertz detection by photoconductive antennas (PCAs) based on low-temperature grown (LTG) GaAs with 1.5 μm pulse excitation was revisited. We found that the detection efficiency can be improved by a factor of 10 (20 dB) by reducing the excitation spot size and the gap length of the PCA, maintaining the low noise feature of the PCA on LTG GaAs. As a result, the signal-to-noise ratio higher than 50 dB was obtained at a reasonable incident power of 9.5 mW, suggesting that the scheme is promising for the detection of terahertz waves in practical time domain systems.
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Zinoni C, Alloing B, Li LH, Marsili F, Fiore A, Lunghi L, et al. Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)]. Appl Phys Lett. 2010;96(8):089901.
Abstract: A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered.
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2008 |
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Li TF, Pashkin YA, Astafiev O, Nakamura Y, Tsai JS, Im H. High-frequency metallic nanomechanical resonators. Appl Phys Lett. 2008;92:043112(1)-043112(3).
Abstract: We developed a technology to fabricate fully metallic doubly clamped beams working as nanomechanical resonators. Measured with a magnetomotive detection scheme, the beams, made of polycrystalline metal films, show as good quality as previously reported ones made of single crystal materials, such as Si, GaAs, AlN, and SiC. Our method is compatible with the conventional fabrication process for nanoscale electronic circuits and thus offers a possibility of easily integrating the beams into superconducting charge and flux qubits and single-electron transistors as well as coupling them to coplanar waveguide resonators.
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Tarkhov M, Claudon J, Poizat JP, Korneev A, Divochiy A, Minaeva O, et al. Ultrafast reset time of superconducting single photon detectors. Appl Phys Lett. 2008;92(24):241112 (1 to 3).
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2007 |
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Delacour C, Claudon J, Poizat J-P, Pannetier B, Bouchiat V, de Lamaestre RE, et al. Superconducting single photon detectors made by local oxidation with an atomic force microscope. Appl Phys Lett. 2007;90(19):191116 (1 t0 3).
Abstract: The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K.
The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433.
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