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Shcherbatenko, M.; Lobanov, Y.; Semenov, A.; Kovalyuk, V.; Korneev, A.; Ozhegov, R.; Kaurova, N.; Voronov, B.; Goltsman, G. |
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Title |
Coherent detection of weak signals with superconducting nanowire single photon detector at the telecommunication wavelength |
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Conference Article |
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Year |
2017 |
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Proc. SPIE |
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Proc. SPIE |
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10229 |
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0G (1 to 12) |
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Keywords |
SSPD mixer, SNSPD, coherent detection, weak signal detection, superconducting nanostructures |
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Abstract |
Achievement of the ultimate sensitivity along with a high spectral resolution is one of the frequently addressed problems, as the complication of the applied and fundamental scientific tasks being explored is growing up gradually. In our work, we have investigated performance of a superconducting nanowire photon-counting detector operating in the coherent mode for detection of weak signals at the telecommunication wavelength. Quantum-noise limited sensitivity of the detector was ensured by the nature of the photon-counting detection and restricted by the quantum efficiency of the detector only. Spectral resolution given by the heterodyne technique and was defined by the linewidth and stability of the Local Oscillator (LO). Response bandwidth was found to coincide with the detector’s pulse width, which, in turn, could be controlled by the nanowire length. In addition, the system noise bandwidth was shown to be governed by the electronics/lab equipment, and the detector noise bandwidth is predicted to depend on its jitter. As have been demonstrated, a very small amount of the LO power (of the order of a few picowatts down to hundreds of femtowatts) was required for sufficient detection of the test signal, and eventual optimization could lead to further reduction of the LO power required, which would perfectly suit for the foreseen development of receiver matrices and the need for detection of ultra-low signals at a level of less-than-one-photon per second. |
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Spie |
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Prochazka, I.; Sobolewski, R.; James, R.B. |
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Photon counting applications |
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10.1117/12.2267724 |
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1201 |
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Author |
Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Title |
Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver |
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Conference Article |
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Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
27 |
Issue |
4 |
Pages |
6 |
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Keywords |
Multi-pixel, HEB, silicon-on-insulator, horn array |
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Abstract |
We report on the development of a multi-pixel
Hot Electron Bolometer (HEB) receiver fabricated using
silicon membrane technology. The receiver comprises a
2 × 2 array of four HEB mixers, fabricated on a single
chip. The HEB mixer chip is based on a superconducting
NbN thin film deposited on top of the silicon-on-insulator
(SOI) substrate. The thicknesses of the device layer and
handling layer of the SOI substrate are 20 μm and 300 μm
respectively. The thickness of the device layer is chosen
such that it corresponds to a quarter-wave in silicon at
1.35 THz. The HEB mixer is integrated with a bow-tie
antenna structure, in turn designed for coupling to a
circular waveguide, |
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RPLAB @ kovalyuk @ |
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1111 |
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Author |
Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Title |
Development of a silicon membrane-based multipixel hot electron bolometer receiver |
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Journal Article |
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Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
27 |
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4 |
Pages |
1-5 |
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Keywords |
Multi-pixel, NbN HEB, silicon-on-insulator, horn array |
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We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. |
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1051-8223 |
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no |
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1324 |
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Author |
Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Title |
Photon absorption near the gap frequency in a hot electron bolometer |
Type |
Journal Article |
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Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
27 |
Issue |
4 |
Pages |
1-4 |
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Keywords |
NBN HEB mixer |
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Abstract |
The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap. |
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1558-2515 |
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no |
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Serial |
1331 |
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Author |
Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N. |
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Title |
Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection |
Type |
Journal Article |
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Year |
2016 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
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Volume |
50 |
Issue |
12 |
Pages |
1600-1603 |
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Keywords |
carbon nanotubes, CNT detectors |
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Abstract |
Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed. |
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1063-7826 |
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1776 |
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Author |
Seliverstov, S. V.; Rusova, A. A.; Kaurova, N. S.; Voronov, B. M.; Goltsman, G. N. |
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Title |
Attojoule energy resolution of direct detector based on hot electron bolometer |
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Conference Article |
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Year |
2016 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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741 |
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012165 (1 to 5) |
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Keywords |
NbN HEB detector |
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We characterize superconducting antenna-coupled NbN hot-electron bolometer (HEB) for direct detection of THz radiation operating at a temperature of 9.0 K. At signal frequency of 2.5 THz, the measured value of the optical noise equivalent power is 2.0×10-13 W-Hz-0.5. The estimated value of the energy resolution is about 1.5 aJ. This value was confirmed in the experiment with pulsed 1.55-μm laser employed as a radiation source. The directly measured detector energy resolution is 2 aJ. The obtained risetime of pulses from the detector is 130 ps. This value was determined by the properties of the RF line. These characteristics make our detector a device-of-choice for a number of practical applications associated with detection of short THz pulses. |
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IOP Publishing |
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Seliverstov_2016 |
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1337 |
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Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
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Title |
Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers |
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Journal Article |
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2016 |
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Appl. Phys. Lett. |
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109 |
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13 |
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132602 |
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Keywords |
HEB mixer, contacts |
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We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. |
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no |
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1107 |
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Tret'yakov, I. V.; Kaurova, N. S.; Voronov, B. M.; Anfert'ev, V. A.; Revin, L. S.; Vaks, V. L.; Gol'tsman, G. N. |
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The influence of the diffusion cooling on the noise band of the superconductor NbN hot-electron bolometer operating in the terahertz range |
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Journal Article |
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2016 |
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Tech. Phys. Lett. |
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42 |
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6 |
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563-566 |
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HEB, noise bandwidth, conversion gain bandwidth, noise temperature, Andreev reflection |
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Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb â‰<aa> Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/ metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K. |
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1106 |
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Author |
Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Title |
Gap frequency and photon absorption in a hot electron bolometer |
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Conference Article |
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2016 |
Publication |
Proc. 27th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 27th Int. Symp. Space Terahertz Technol. |
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121 |
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NbN HEB; Si membrane |
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The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015. |
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Seliverstov, S.; Maslennikov, S.; Ryabchun, S.; Finkel, M.; Klapwijk, T. M.; Kaurova, N.; Vachtomin, Yu.; Smirnov, K.; Voronov, B.; Goltsman, G. |
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Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer |
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Journal Article |
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2015 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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2300304 |
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HEB detector responsivity, HEB model, numerical calculations, numerical model |
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We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter. |
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