Records |
Author |
Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
Type |
Journal Article |
Year |
1975 |
Publication |
Sov. Phys. JETP |
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Sov. Phys. JETP |
Volume |
40 |
Issue |
2 |
Pages |
311-315 |
Keywords |
Ge, cyclotron resonance |
Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
Title |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
Type |
Journal Article |
Year |
1989 |
Publication |
Sov. Phys. and Technics of Semiconductors |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Sov. Phys. and Technics of Semiconductors |
Volume |
23 |
Issue |
8 |
Pages |
843-846 |
Keywords |
Ge, crystallography |
Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
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1692 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Title |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
Type |
Journal Article |
Year |
1999 |
Publication |
Semicond. |
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Semicond. |
Volume |
33 |
Issue |
5 |
Pages |
551-554 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. |
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1063-7826 |
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1571 |
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Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Title |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
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Conference Article |
Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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Pages |
55-58 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
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1602 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
Title |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
Type |
Conference Article |
Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Proc. 4-th Int. Semicond. Device Research Symp. |
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163-166 |
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S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN |
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1603 |
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Author |
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
Type |
Journal Article |
Year |
1976 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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10 |
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1379-1383 |
Keywords |
Ge, cyclotron resonance, charged impurities, |
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1772 |
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Author |
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
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Journal Article |
Year |
1972 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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6 |
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362-363 |
Keywords |
Ge, cyclotron resonance, quantizing magnetic fields |
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1774 |
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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Title |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
Type |
Journal Article |
Year |
1996 |
Publication |
Phys. Rev. B Condens. Matter. |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Phys. Rev. B Condens. Matter. |
Volume |
53 |
Issue |
12 |
Pages |
R7592-R7595 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
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0163-1829 |
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PMID:9982274 |
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no |
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1612 |
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Author |
Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
Title |
Electron–phonon interaction in disordered conductors |
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Journal Article |
Year |
1999 |
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Phys. Rev. B Condens. Matter |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Phys. Rev. B Condens. Matter |
Volume |
263-264 |
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190-192 |
Keywords |
disordered conductors, electron-phonon interaction |
Abstract |
The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. |
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0921-4526 |
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1765 |
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Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
Title |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
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Journal Article |
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1997 |
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Phys. Rev. B |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Phys. Rev. B |
Volume |
56 |
Issue |
16 |
Pages |
10089-10096 |
Keywords |
disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity |
Abstract |
The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
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0163-1829 |
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1766 |
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