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Author |
Manus, M. K. Mc; Kash, J. A.; Steen, S. E.; Polonsky, S.; Tsang, J.C.; Knebel, D. R.; Huott, W. |
Title |
PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis |
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Journal Article |
Year |
2000 |
Publication |
Microelectronics Reliability |
Abbreviated Journal |
Microelectronics Reliability |
Volume |
40 |
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Pages |
1353-1358 |
Keywords |
SSPD, CMOS testing |
Abstract |
Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors (FETs) are synchronous with logic state switching. Picosecond Imaging Circuit Analysis (PICA), a new optical imaging technique combining imaging with timing, spatially resolves individual devices at the 0.5 micron level and switching events on a 10 picosecond timescale. PICA is used here for the diagnostics of failures on two VLSI microprocessors. |
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1054 |
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Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
Title |
Carrier lifetime in excited states of shallow impurities in germanium |
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Journal Article |
Year |
1977 |
Publication |
JETP Lett. |
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JETP Lett. |
Volume |
25 |
Issue |
12 |
Pages |
539-543 |
Keywords |
Ge, shallow impurities, excited states |
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1726 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
Title |
Transitions of electrons between excited states of donors in germanium |
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Journal Article |
Year |
1971 |
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JETP Lett. |
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JETP Lett. |
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14 |
Issue |
2 |
Pages |
63-65 |
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Ge, donors, excited states |
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1740 |
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Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
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Journal Article |
Year |
1975 |
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JETP Lett. |
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JETP Lett. |
Volume |
22 |
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4 |
Pages |
95-97 |
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Ge, impurities, excited states, absorption spectra |
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1773 |
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Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
Title |
Population of excited-states of small admixtures in germanium |
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Conference Article |
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1978 |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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42 |
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6 |
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1154-1159 |
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Ge, excited states, admixtures |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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1723 |
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