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Cherednichenko, S., Kroug, M., Merkel, H., Khosropanah, P., Adam, A., Kollberg, E., et al. (2002). 1.6 THz heterodyne receiver for the far infrared space telescope. Phys. C: Supercond., 372-376, 427–431.
Abstract: A low noise heterodyne receiver is being developed for the terahertz range using a phonon-cooled hot-electron bolometric mixer based on 3.5 nm thick superconducting NbN film. In the 1–2 GHz intermediate frequency band the double-sideband receiver noise temperature was 450 K at 0.6 THz, 700 K at 1.6 THz and 1100 K at 2.5 THz. In the 3–8 GHz IF band the lowest receiver noise temperature was 700 K at 0.6 THz, 1500 K at 1.6 THz and 3000 K at 2.5 THz while it increased by a factor of 3 towards 8 GHz.
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Kroug, M., Yagoubov, P., Gol'tsman, G., & Kollberg, E. (1997). NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies. In Inst. Phys. Conf. Ser. (Vol. 1, pp. 405–408). Bristol.
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Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Schubert, J., Hubers, H. W., et al. (1999). Hot electron bolometric mixers based on NbN films deposited on MgO substrates. In Inst. Phys. Conf. Ser. (Vol. 167, pp. 687–690). Barcelona, Spain.
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Kroug, M., Cherednichenko, S., Merkel, H., Kollberg, E., Voronov, B., Gol'tsman, G., et al. (2001). NbN hot electron bolometric mixers for terahertz receivers. IEEE Trans. Appl. Supercond., 11(1), 962–965.
Abstract: Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two.
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Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Schubert, J., Hubers, H. - W., et al. (1999). Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies. IEEE Trans. Appl. Supercond., 9(2), 3757–3760.
Abstract: The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.
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Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Gol'tsman, G., Svechnikov, S., et al. (1998). Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies. Appl. Phys. Lett., 73(19), 2814–2816.
Abstract: In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW.
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Kroug, M. (2001). Hot electron bolometric mixers for a quasi-optical terahertz receiver. Ph.D. thesis, , Chalmers University of Technology, Gothenburg, Sweden.
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Kroug, M., Cherednichenko, S., Choumas, M., Merkel, H., Kollberg, E., Hübers, H. - W., et al. (2001). HEB quasi-optical heterodyne receiver for THz frequencies. In Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 244–252). San Diego, CA, USA.
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Merkel, H. F., Khosropanah, P., Sigfrid Yngvesson, K., Cherednichenko, S., Kroug, M., Adam, A., et al. (2001). An active zone small signal model for hot-electron bolometric mixers. In Proc. 12th Int. Symp. Space Terahertz Technol. (55). San Diego, CA, USA.
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Uzawa, Y., Kojima, T., Kroug, M., Takeda, M., Candotti, M., Fujii, Y., et al. (2009). Development of the 787-950 GHz ALMA band 10 cartridge. In Proc. 20th Int. Symp. Space Terahertz Technol. (p. 12).
Abstract: We are developing the Atacama Large Millimeter/Submillimeter Array (ALMA) Band 10 (787-950 GHz) receiver cartridge. The incoming beam from the 12-m antenna is reflected by a pair of two ellipsoidal mirrors placed in the cartridge, and then split into two orthogonal polarizations by a free-standing wire-grid. Each beam enters a corrugated feed horn attached to a double-side-band (DSB) mixer block. The mixer uses a full-height waveguide and an NbTiN- or NbN-based superconductor-insulator-superconductor (SIS) mixer chip. We are testing the following three types of mixer chips: 1) Nb SIS junctions + NbTiN/SiO2/Al tuning circuits on a quartz substrate, 2) Nb SIS junctions + NbN/SiO2/Al tuning circuits on an MgO substrate, and 3) NbN SIS junctions + NbN or NbTiN tuning circuits on an MgO substrate. The IF system uses a 4-12-GHz cooled low-noise InP-based MMIC amplifier developed by Caltech. So far, the type 1) has shown the best performance. At LO frequencies from 800 to 940 GHz, the mixer noise temperatures measured by using the standard Y-factor method were below 240 K at an operating physical temperature of 4 K. The lowest noise temperature, 169 K, was obtained at the center frequency of the band 10, as designed. These well-developed technologies will be implemented in the band 10 cartridge to achieve the ALMA specifications.
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