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Ryabchun, S. A., Tretyakov, I. V., Pentin, I. V., Kaurova, N. S., Seleznev, V. A., Voronov, B. M., et al. (2009). Low-noise wide-band hot-electron bolometer mixer based on an NbN film. Radiophys. Quant. Electron., 52(8), 576–582.
Abstract: We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.
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Lobanov, Y., Tong, E., Blundell, R., Hedden, A., Voronov, B., & Gol'tsman, G. (2011). Large-signal frequency response of an HEB mixer: from 300 MHz to terahertz. IEEE Trans. Appl. Supercond., 21(3), 628–631.
Abstract: We present a study of the large signal frequency response of an HEB mixer over a wide frequency range. In our experiments, we have subjected the HEB mixer to incident electromagnetic radiation from 0.3 GHz to 1 THz. The mixer element is an NbN film deposited on crystalline quartz. The mixer chip is mounted in a waveguide cavity, coupled to free space with a diagonal horn. At microwave frequencies, electromagnetic radiation is applied through the coaxial bias port of the mixer block. At higher frequencies the input signal passes via the diagonal horn feed. At each frequency, the incident power is varied and a family of I-V curves is recorded. From the curves we identify 3 distinct regimes of operation of the mixer separated by the phonon relaxation frequency and the superconducting energy gap frequency observed at about 3 GHz and 660 GHz respectively. In this paper, we will present observed curves and discuss the results of our experiment.
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Dzardanov, A., Ekstrom, H., Gershenzon, E., Gol'tsman, G., Jacobsson, S., Karasik, B., et al. (1994). Hot-electron superconducting mixers for 20-500 GHz operation. In Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. (Vol. 2250, pp. 276–278).
Abstract: Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies.
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Chulkova, G., Milostnaya, I., Tarkhov, M., Korneev, A., Minaeva, O., Voronov, B., et al. (2006). Superconducting single-photon nanostructured detectors for advanced optical applications. In Proc. Symposium on Photonics Technologies for 7th Framework Program (Vol. 400).
Abstract: We present superconducting single-photon detectors (SSPDs) based on NbN thin-film nanostructures and operated at liquid helium temperatures. The SSPDs are made of ultrathin NbN films (2.5-4 nm thick, Tc= 9-11K) as meander-shaped nanowires covering the area of 10× 10 µm2. Our detectors are operated at the temperature well below the critical temperature Tc and are DC biased by a current Ib close to the meander critical current Ic. The operation principle of the detector is based on the use of the resistive region in a narrow ultra-thin superconducting stripe upon the absorption of an incident photon. The developed devices demonstrate high sensitivity and response speed in a broadband range from UV to mid-IR (up to 6 µm), making them very attractive for advanced optical technologies, which require efficient detectors of single quanta and low-density optical radiation.
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Goltsman, G. N., Korneev, A. A., Finkel, M. I., Divochiy, A. V., Florya, I. N., Korneeva, Y. P., et al. (2010). Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter. In 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves (p. 1).
Abstract: We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications.
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Tret'yakov, I. V., Kaurova, N. S., Voronov, B. M., Anfert'ev, V. A., Revin, L. S., Vaks, V. L., et al. (2016). The influence of the diffusion cooling on the noise band of the superconductor NbN hot-electron bolometer operating in the terahertz range. Tech. Phys. Lett., 42(6), 563–566.
Abstract: Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb â‰<aa> Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/ metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K.
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Shcherbatenko, M., Tretyakov, I., Lobanov, Y., Maslennikov, S. N., Kaurova, N., Finkel, M., et al. (2016). Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers. Appl. Phys. Lett., 109(13), 132602.
Abstract: We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device.
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Matyushkin, Y., Kaurova, N., Voronov, B., Goltsman, G., & Fedorov, G. (2020). On chip carbon nanotube tunneling spectroscopy. Fullerenes, Nanotubes and Carbon Nanostructures, 28(1), 50–53.
Abstract: We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes.
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Goltsman, G., Korneev, A., Izbenko, V., Smirnov, K., Kouminov, P., Voronov, B., et al. (2004). Nano-structured superconducting single-photon detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 520(1-3), 527–529.
Abstract: NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.
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Il'in, K., Siegel, M., Semenov, A., Engel, A., Hübers, H. - W., Hollmann, E., et al. (2004). Thickness dependence of superconducting properties of ultrathin Nb and NbN films. In AKF-Frühjahrstagung.
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