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Ghali, Mohsen; Ohtani1, Keita; Ohno, Yuzo; Ohno, Hideo |
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Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field |
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2012 |
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Nature Communications |
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Nat. Comm. |
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3 |
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661 |
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6 |
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fromIPMRAS |
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Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05. |
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RPLAB @ gujma @ |
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769 |
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Grotz, Bernhard; Hauf, Moritz V.; Dankerl, Markus; Naydenov, Boris; Pezzagna, Sébastien; Meijer, Jan; Jelezko, Fedor; Wrachtrup, Jörg; Stutzmann, Martin; Reinhard, Friedemann; Garrido, Jose A. |
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Title |
Charge state manipulation of qubits in diamond |
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Journal Article |
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2012 |
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Nature Communications |
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Nat. Comm. |
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3 |
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729 |
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6 |
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fromIPMRAS |
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The nitrogen-vacancy (NV) centre in diamond is a promising candidate for a solid-state qubit. However, its charge state is known to be unstable, discharging from the qubit state NV- into the neutral state NV0 under various circumstances. Here we demonstrate that the charge state can be controlled by an electrolytic gate electrode. This way, single centres can be switched from an unknown non-fluorescent state into the neutral charge state NV0, and the population of an ensemble of centres can be shifted from NV0 to NV-. Numerical simulations confirm the manipulation of the charge state to be induced by the gate-controlled shift of the Fermi level at the diamond surface. This result opens the way to a dynamic control of transitions between charge states and to explore hitherto inaccessible states, such as NV+. |
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RPLAB @ gujma @ |
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770 |
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Bonifas, Andrew P.; McCreery, Richard L. |
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‘Soft’ Au, Pt and Cu contacts for molecular junctions through surface-diffusion-mediated deposition |
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2010 |
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Nature Nanotechnology |
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Nat. Nanotech. |
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5 |
Issue |
8 |
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612–617 |
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Virtually all types of molecular electronic devices depend on electronically addressing a molecule or molecular layer through the formation of a metallic contact. The introduction of molecular devices into integrated circuits will probably depend on the formation of contacts using a vapour deposition technique, but this approach frequently results in the metal atoms penetrating or damaging the molecular layer. Here, we report a method of forming 'soft' metallic contacts on molecular layers through surface-diffusion-mediated deposition, in which the metal atoms are deposited remotely and then diffuse onto the molecular layer, thus eliminating the problems of penetration and damage. Molecular junctions fabricated by this method exhibit excellent yield (typically >90%) and reproducibility, and allow examination of the effects of molecular-layer structure, thickness and contact work function. |
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RPLAB @ gujma @ |
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682 |
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Freer, Erik M.; Grachev, Oleg; Duan, Xiangfeng; Martin, Samuel; Stumbo, David P. |
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High-yield self-limiting single-nanowire assembly with dielectrophoresis |
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2010 |
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Nature Nanotechnology |
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Nat. Nanotech. |
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5 |
Issue |
7 |
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525–530 |
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Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly. |
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RPLAB @ gujma @ |
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683 |
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Konstantatos, Gerasimos; Sargent, Edward H. |
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Nanostructured materials for photon detection |
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2010 |
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Nature Nanotechnology |
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Nat. Nanotech. |
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5 |
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6 |
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391–400 |
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The detection of photons underpins imaging, spectroscopy, fibre-optic communications and time-gated distance measurements. Nanostructured materials are attractive for detection applications because they can be integrated with conventional silicon electronics and flexible, large-area substrates, and can be processed from the solution phase using established techniques such as spin casting, spray coating and layer-by-layer deposition. In addition, their performance has improved rapidly in recent years. Here we review progress in light sensing using nanostructured materials, focusing on solution-processed materials such as colloidal quantum dots and metal nanoparticles. These devices exhibit phenomena such as absorption of ultraviolet light, plasmonic enhancement of absorption, size-based spectral tuning, multiexciton generation, and charge carrier storage in surface and interface traps. |
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RPLAB @ gujma @ |
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684 |
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