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Svechnikov, S. I., Okunev, O. V., Yagoubov, P. A., Gol'tsman, G. N., Voronov, B. M., Cherednichenko, S. I., et al. (1997). 2.5 THz NbN hot electron mixer with integrated tapered slot antenna. IEEE Trans. Appl. Supercond., 7(2), 3548–3551.
Abstract: A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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Torgashin, M. Y., Koshelets, V. P., Dmitriev, P. N., Ermakov, A. B., Filippenko, L. V., & Yagoubov, P. A. (2007). Superconducting integrated receivers based on Nb-AlN-NbN circuits. IEEE Trans. Appl. Supercond., 17(2), 379–382.
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Koshelets, V. P., Shitov, S. V., Ermakov, A. B., Filippenko, L. V., Koryukin, O. V., Khudchenko, A. V., et al. (2005). Superconducting integrated receiver for TELIS. IEEE Trans. Appl. Supercond., 15(2), 960–963.
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Hoogeveen, R. W. M., Yagoubov, P. A., de Lange, A., Selig, A. M., Koshelets, V. P., Ellison B. N., et al. (2005). Superconducting integrated receiver development for TELIS. In Proc. 12th International Symposium on Remote Sensing. Bruges, Belgium.
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Koshelets, V. P., Ermakov, A. B., Filippenko, L. V., Khudchenko, A. V., Kiselev, O. S., Sobolev, A. S., et al. (2007). Superconducting integrated submillimeter receiver for TELIS. IEEE Trans. Appl. Supercond., 17(2), 336–342.
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