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Chen, J.; Kang, L.; Jin, B. B.; Xu, W. W.; Wu, P. H.; Zhang, W.; Jiang, L.; Li, N.; Shi, S. C.; Gol'tsman, G. N. |
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Title |
Properties of terahertz superconducting hot electron bolometer mixers |
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2008 |
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Int. J. Terahertz Sci. Technol. |
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Int. J. Terahertz Sci. Technol. |
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1 |
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1 |
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37-41 |
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NbN HEB mixers, noise temperature |
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A quasi-optical superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixer has been fabricated and measured in the terahertz (THz) frequency range of 0.5~2.52 THz. A receiver noise temperature of 2000 K at 2.52 THz has been obtained for the mixer without corrections. Also, the effect of a Parylene C anti-reflection (AR) coating on the silicon (Si) lens has been studied. |
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1417 |
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Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
Effect of electromagnetic radiation on a superconductor in a magnetic field |
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1988 |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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52 |
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3 |
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449-451 |
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The effect of electromagnetic radiation on thin superconducting films of Nb with a large number of static defects is investigated experimentally for the case where the film is in the resistive state due to an applied magnetic field and transport current. The results obtained are found to be well described by a model of spatially homogeneous electron heating. It is noted that the results obtained here for Nb films are also valid for Al, NbN, and MoRe films. |
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Russian |
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0367-6765 |
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4th Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Tallin, Estonian SSR, Apr. 1987 |
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1702 |
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Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. |
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Broadband ultrafast superconducting NbN detector for electromagnetic radiation |
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1994 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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75 |
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7 |
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3695-3697 |
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NbN HEB |
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An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect. |
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252 |
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Semenov, A. D.; Hübers, H.-W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M. |
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Design and performance of the lattice-cooled hot-electron terahertz mixer |
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2000 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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Volume |
88 |
Issue |
11 |
Pages |
6758-6767 |
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Keywords |
HEB mixer, charge imbalance, HF current distribution |
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We present the measurements and the theoreticalmodel of the frequency-dependent noise temperature of a superconductor lattice-cooled hot-electron bolometer mixer in the terahertz frequency range. The increase of the noise temperature with frequency is a cumulative effect of the nonuniform distribution of the high-frequency current in the bolometer and the charge imbalance, which occurs at the edges of the normal domain and at the contacts with normal metal. We show that under optimal operation the fluctuation sensitivity of the mixer is determined by thermodynamic fluctuations of the noise power, whereas at small biases there appears additional noise, which is probably due to the flux flow. We propose the prescription of how to minimize the influence of the current distribution on the mixer performance. |
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0021-8979 |
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306 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. |
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Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes |
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2007 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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101 |
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12 |
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124508 (1 to 6) |
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HEB, mixer, membrane |
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The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach. |
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0021-8979 |
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