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Author Sobolewski, R.; Zhang, J.; Slysz, W.; Pearlman, A.; Verevkin, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Goltsman, G. N.
Title Ultrafast superconducting single-photon optical detectors Type Conference Article
Year 2003 Publication Proc. SPIE Abbreviated Journal (up) Proc. SPIE
Volume 5123 Issue Pages 1-11
Keywords NbN SSPD, SNSPD
Abstract We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography.
Address
Corporate Author Thesis
Publisher SPIE Place of Publication Editor Spigulis, J.; Teteris, J.; Ozolinsh, M.; Lusis, A.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Advanced Optical Devices, Technologies, and Medical Applications
Notes Approved no
Call Number Serial 1513
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Author Verevkin, A. A.; Pearlman, A.; Slysz, W.; Zhang, J.; Sobolewski, R.; Chulkova, G.; Okunev, O.; Kouminov, P.; Drakinskij, V.; Smirnov, K.; Kaurova, N.; Voronov, B.; Gol’tsman, G.; Currie, M.
Title Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications Type Conference Article
Year 2003 Publication Proc. SPIE Abbreviated Journal (up) Proc. SPIE
Volume 5105 Issue Pages 160-170
Keywords NbN SSPD, SNSPD, applications, single-photon detector, quantum cryptography, quantum communications, superconducting devices
Abstract We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10-18 W/Hz1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed.
Address
Corporate Author Thesis
Publisher SPIE Place of Publication Editor Donkor, E.; Pirich, A.R.; Brandt, H.E.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Quantum Information and Computation
Notes Approved no
Call Number Serial 1514
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Author Moshkova, M. A.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.
Title High-efficiency multi-element superconducting single-photon detector Type Conference Article
Year 2021 Publication Proc. SPIE Abbreviated Journal (up) Proc. SPIE
Volume 11771 Issue Pages 2-8
Keywords PNR SSPD, large active area, detection efficiency
Abstract We present the result of the creation and investigation of the multi-element superconducting single photon detectors, which can recognize the number of photons (up to six) in a short pulse of the radiation at telecommunication wavelengths range. The best receivers coupled with single-mode fiber have the system quantum efficiency of ⁓85%. The receivers have a 100 ps time resolution and a few nanoseconds dead time that allows them to operate at megahertz counting rate. Implementation of the multi-element architecture for creation of the superconducting single photon detectors with increased sensitive area allows to create the high efficiency receivers coupled with multi-mode fibers and with preserving of the all advantages of superconducting photon counters.
Address
Corporate Author Thesis
Publisher SPIE Place of Publication Editor Prochazka, I.; Štefaňák, M.; Sobolewski, R.; Gábris, A.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Quantum Optics and Photon Counting
Notes Approved no
Call Number Serial 1795
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Author Schroeder, E.; Mauskopf, P.; Pilyavsky, G.; Sinclair, A.; Smith, N.; Bryan, S.; Mani, H.; Morozov, D.; Berggren, K.; Zhu, D.; Smirnov, K.; Vakhtomin, Y.
Title On the measurement of intensity correlations from laboratory and astronomical sources with SPADs and SNSPDs Type Conference Article
Year 2016 Publication Proc. SPIE Abbreviated Journal (up) Proc. SPIE
Volume 9907 Issue Pages 99070P (1 to 13)
Keywords SPAD, NbN SSPD applications, SNSPD
Abstract We describe the performance of detector modules containing silicon single photon avalanche photodiodes (SPADs) and superconducting nanowire single photon detectors (SNSPDs) to be used for intensity interferometry. The SPADs are mounted in fiber-coupled and free-space coupled packages. The SNSPDs are mounted in a small liquid helium cryostat coupled to single mode fiber optic cables which pass through a hermetic feed-through. The detectors are read out with microwave amplifiers and FPGA-based coincidence electronics. We present progress on measurements of intensity correlations from incoherent sources including gas-discharge lamps and stars with these detectors. From the measured laboratory performance of the correlation system, we estimate the sensitivity to intensity correlations from stars using commercial telescopes and larger existing research telescopes.
Address
Corporate Author Thesis
Publisher SPIE Place of Publication Editor Malbet, F.; Creech-Eakman, M.J.; Tuthill, P.G.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Optical and Infrared Interferometry and Imaging V
Notes Approved no
Call Number Serial 1809
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Author Ozhegov, R. V.; Gorshkov, K. N.; Vachtomin, Y. B.; Smirnov, K. V.; Finkel, M. I.; Goltsman, G. N.; Kiselev, O. S.; Kinev, N. V.; Filippenko, L. V.; Koshelets, V. P.
Title Terahertz imaging system based on superconducting heterodyne integrated receiver Type Conference Article
Year 2014 Publication Proc. THz and Security Applications Abbreviated Journal (up) Proc. THz and Security Applications
Volume Issue Pages 113-125
Keywords SIS mixer, SIR, THz imaging
Abstract The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compared to traditional systems.

In this project we propose a prototype THz imaging system using an 1 pixel SIR and 2D scanner. At a local oscillator frequency of 500 GHz the best noise equivalent temperature difference (NETD) of the SIR is 10 mK at an integration time of 1 s and a detection bandwidth of 4 GHz. The scanner consists of two rotating flat mirrors placed in front of the antenna consisting of a spherical primary reflector and an aspherical secondary reflector. The diameter of the primary reflector is 0.3 m. The operating frequency of the imaging system is 600 GHz, the frame rate is 0.1 FPS, the scanning area is 0.5 × 0.5 m2, the image resolution is 50 × 50 pixels, the distance from an object to the scanner was 3 m. We have obtained THz images with a spatial resolution of 8 mm and a NETD of less than 2 K.
Address
Corporate Author Thesis
Publisher Springer Netherlands Place of Publication Dordrecht Editor Corsi, C.; Sizov, F.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-94-017-8828-1 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1368
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Author Shcheslavskiy, V.; Morozov, P.; Divochiy, A.; Vakhtomin, Y.; Smirnov, K.; Becker, W.
Title Erratum: “Ultrafast time measurements by time-correlated single photon counting coupled with superconducting single photon detector” [Rev. Sci. Instrum. 87, 053117 (2016)] Type Miscellaneous
Year 2016 Publication Rev. Sci. Instrum. Abbreviated Journal (up) Rev. Sci. Instrum.
Volume 87 Issue 6 Pages 069901
Keywords SSPD, SNSPD, TCSPC, jitter
Abstract In the original paper1the Ref. 10 should be M. Sanzaro, N. Calandri, A. Ruggeri, C. Scarcella, G. Boso, M. Buttafava, and A. Tosi, Proc. SPIE9370, 93701T (2015).
Address Becker & Hickl GmbH, Nahmitzer Damm 30, Berlin 12277, Germany
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0034-6748 ISBN Medium
Area Expedition Conference
Notes PMID:27370512 Approved no
Call Number Serial 1810
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Author Korneev, A. A.; Divochiy, A. V.; Vakhtomin, Yu. B.; Korneeva, Yu. P.; Larionov, P. A.; Manova, N. N.; Florya, I. N.; Trifonov, A. V.; Voronov, B. M.; Smirnov, K. V.; Semenov, A. V.; Chulkova, G. M.; Goltsman, G. N.
Title IR single-photon receiver based on ultrathin NbN superconducting film Type Journal Article
Year 2013 Publication Rus. J. Radio Electron. Abbreviated Journal (up) Rus. J. Radio Electron.
Volume Issue 5 Pages
Keywords SSPD, SNSPD
Abstract We present our recent results in research and development of superconducting single-photon detector (SSPD). We achieved the following performance improvement: first, we developed and characterized SSPD integrated in optical cavity and enabling its illumination from the face side, not through the substrate, second, we improved the quantum efficiency of the SSPD at around 3 μm wavelength by reduction of the strip width to 40 nm, and, finally, we improved the detection efficiency of the SSPD-based single-photon receiver system up to 20% at 1550 nm and extended its wavelength range beyond 1800 nm by the usage of the fluoride ZBLAN fibres.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes 8 pages Approved no
Call Number RPLAB @ sasha @ korneevir Serial 1043
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Author Smirnov, K.; Vachtomin, Y.; Divochiy, A.; Antipov, A.; Goltsman, G.
Title The limitation of noise equivalent power by background radiation for infrared superconducting single photon detectors coupled to standard single mode optical fibers Type Journal Article
Year 2015 Publication Rus. J. Radio Electron. Abbreviated Journal (up) Rus. J. Radio Electron.
Volume Issue 5 Pages
Keywords NbN SSPD
Abstract We investigated the minimum level of the dark count rates and noise equivalent power of superconducting single photon detectors coupled to standard single mode optical fibers. We found that background radiation limits the minimum level of the dark count rates. We also proposed the effective method for reducing background radiation out of the required spectral range of the detector. Measured noise equivalent power of detector reaches 8.9×10-19 W×Hz1/2 at a wavelength of 1.55 μm and quantum efficiency 35%.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes 14 pages Approved no
Call Number Serial 1813
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Author Semenov, A. V.; Devyatov, I. A.; Korneev, A. A.; Smirnov, K. V.; Goltsman, G. N.; Melnikov, A. P.
Title Derivation of expression for thermodynamic potential of “dirty” superconductor Type Journal Article
Year 2012 Publication Rus. J. Radio Electron. Abbreviated Journal (up) Rus. J. Radio Electron.
Volume Issue 4 Pages
Keywords dirty superconductor, Usadel theory, thermodynamic potential
Abstract We derive a formula for thermodynamic potential of dirty superconductor which express it via isotropic quasiclassical Green functions of Usadel theory. Our result allows unify description of dynamic processes and fluctuations in superconducting nano-electronic devices.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes 7 pages Approved no
Call Number Serial 1824
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Author Korneeva, Yu. P.; Trifonov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.
Title Design of resonator for superconducting single-photon detector Type Journal Article
Year 2011 Publication Rus. J. Radio Electron. Abbreviated Journal (up) Rus. J. Radio Electron.
Volume Issue 12 Pages
Keywords SSPD optical resonator, SNSPD
Abstract A resonator for superconducting single-photon detector is designed. Near 60% coupling with a radiation propagating from a dielectric substrate of optical fiber is demonstrated to be achieved for typical values of the detector’s film sheet resistance.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes 6 pages Approved no
Call Number Serial 1827
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Author Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K.
Title Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation Type Journal Article
Year 2020 Publication Sci. Rep. Abbreviated Journal (up) Sci. Rep.
Volume 10 Issue 1 Pages 16819
Keywords VN HEB
Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.
Address National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2045-2322 ISBN Medium
Area Expedition Conference
Notes PMID:33033360; PMCID:PMC7546726 Approved no
Call Number Serial 1797
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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
Title Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons Type Journal Article
Year 2010 Publication Semicond. Abbreviated Journal (up) Semicond.
Volume 44 Issue 11 Pages 1427-1429
Keywords 2DEG, AlGaAs/GaAs heterostructures mixers
Abstract The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1063-7826 ISBN Medium
Area Expedition Conference
Notes Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов Approved no
Call Number Serial 1216
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Author Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N.
Title A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure Type Journal Article
Year 2005 Publication Semicond. Abbreviated Journal (up) Semicond.
Volume 39 Issue 9 Pages 1082-1086
Keywords 2D electron gas, AlGaAs/GaAs heterostructures, mixers
Abstract Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1063-7826 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1463
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S.
Title Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts Type Journal Article
Year 1999 Publication Semicond. Abbreviated Journal (up) Semicond.
Volume 33 Issue 5 Pages 551-554
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1063-7826 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1571
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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P.
Title Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements Type Journal Article
Year 2011 Publication Semicond. Sci. Technol. Abbreviated Journal (up) Semicond. Sci. Technol.
Volume 26 Issue 2 Pages 025013
Keywords AlGaAs/GaAs heterojunctions
Abstract We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0268-1242 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1215
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