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Tovpeko, N. A., Trifonov, A. V., Semenov, A. V., Antipov, S. V., Kaurova, N. S., Titova, N. A., et al. (2019). Bandwidth performance of a THz normal metal TiN bolometer-mixer. In Proc. 30th Int. Symp. Space Terahertz Technol. (pp. 102–103).
Abstract: We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films.
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Yagoubov, P., Hübers, H. - W., Gol’tsman, G., Semenov, A., Gao, J., Hoogeveen, R., et al. (2001). Hot-electron bolometer mixers – technology for far-infrared heterodyne instruments in future atmospheric chemistry missions. In S. Buehler, & Berlin (Eds.), Proc. 3rd Int. Symp. Submillimeter Wave Earth Observation From Space (pp. 57–69). Logos-Verlag.
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Semenov, A., Richter, H., Hübers, H. - W., Smirnov, K., Voronov, B., & Gol'tsman, G. (2003). Development of terahertz superconducting hot-electron bolometer mixers. In Proc. 6th European Conf. Appl. Supercond. (Vol. 181, pp. 2960–2965).
Abstract: We present recent results of the development of phonon cooled hot-electron bolometric (HEB) mixers for airborne and balloon borne terahertz heterodyne receivers. Three iomportant issues have been addresses: the quality of NbN films the HEB mixers were made from, the spectral properties of the HEB mixers and the local oscillator power required for optical operation. Studies with an atomic force microscope indicate, that the performance of the HEB mixer might have been effected by the microstructure of the NbN film. Antenna gain and noise temperature were investigated at terahertz frequencies for a HEB embedded in either log-spiral or twin-slot feed antenna. Comparison suggests that at frequencies above 3 THz the spiral feed provides better overall performance. At 1.6 THz, a power of 2.5 µW was required from the local oscillator for optimal operation of the HEB mixer.
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Yagoubov, P., Gol'tsman, G., Voronov, B., Svechnikov, S., Cherednichenko, S., Gershenzon, E., et al. (1996). Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies. In Proc. 7th Int. Symp. Space Terahertz Technol. (pp. 303–317).
Abstract: In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).
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Gershenzon, E. M., Gol’tsman, G. N., Sergeev, A., & Semenov, A. D. (1990). Picosecond response of YBaCuO films to electromagnetic radiation. In W. Gorzkowski, M. Gutowski, A. Reich, & H. Szymczak (Eds.), Proc. European Conf. High-Tc Thin Films and Single Crystals (pp. 457–462).
Abstract: Radiation-induced change of the resistance was studied in the resistive state of YBaCuO films. Electron-phonon relaxation time T h was determmed from direct ep measurements and analysis of quasistationary electron heating. Temperature dependence of That TS 40 K was found to – ep be T h.. T'. The resul ts show that ep detectors with the response time of few picosecond at nitrogen temperature can be realized.
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