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Slysz, W., Wegrzecki, M., Bar, J., Grabiec, P., Gol'tsman, G. N., Verevkin, M., et al. (2004). NbN superconducting single-photon detectors coupled with a communication fiber (Vol. 37).
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Rath, P., Vetter, A., Kovalyuk, V., Ferrari, S., Kahl, O., Nebel, C., et al. (2016). Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps. In J. - E. Broquin, & G. N. Conti (Eds.), Integrated Optics: Devices, Mat. Technol. XX (Vol. 9750, pp. 135–142). Spie.
Abstract: We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps).
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Vasilev, D. D., Malevannaya, E. I., Moiseev, K. M., Zolotov, P. I., Antipov, A. V., Vakhtomin, Y. B., et al. (2020). Influence of deposited material energy on superconducting properties of the WSi films. In IOP Conf. Ser.: Mater. Sci. Eng. (Vol. 781, 012013 (1 to 6)).
Abstract: WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.
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Antipov, A. V., Seleznev, V. A., Vakhtomin, Y. B., Morozov, P. V., Vasilev, D. D., Malevannaya, E. I., et al. (2020). Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range. In IOP Conf. Ser.: Mater. Sci. Eng. (Vol. 781, 012011 (1 to 5)).
Abstract: Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm.
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Henrich, D., Dorner, S., Hofherr, M., Il'in, K., Semenov, A., Heintze, E., et al. (2012). Broadening of hot-spot response spectrum of superconducting NbN nanowire single-photon detector with reduced nitrogen content. J. Appl. Phys., 112.
Abstract: The spectral detection efficiency and the dark count rate of superconducting nanowire
single-photon detectors (SNSPD) have been studied systematically on detectors made from thin
NbN films with different chemical compositions. Reduction of the nitrogen content in the 4 nm
thick NbN films results in a decrease of the dark count rates more than two orders of magnitude
and in a red shift of the cut-off wavelength of the hot-spot SNSPD response. The observed
phenomena are explained by an improvement of uniformity of NbN films that has been confirmed
by a decrease of resistivity and an increase of the ratio of the measured critical current to the
depairing current. The latter factor is considered as the most crucial for both the cut-off
wavelength and the dark count rates of SNSPD. Based on our results we propose a set of criteria
for material properties to optimize SNSPD in the infrared spectral region. VC 2012 American
Institute of Physics. [http://dx.doi.org/10.1063/1.4757625]
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