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Korneev, Alexander; Golt'sman, Gregory; Pernice, Wolfram |
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Title |
Photonic integration meets single-photon detection |
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Miscellaneous |
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2015 |
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Laser Focus World |
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Laser Focus World |
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51 |
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5 |
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47-50 |
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optical waveguide SSPD, SNSPD |
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By embedding superconducting nanowire single-photon detectors (SNSPDs) in nanophotonic circuits, these waveguide-integrated detectors are a key building block for future on-chip quantum computing applications. |
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RPLAB @ akorneev @ |
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1126 |
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Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. |
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Title |
Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation |
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Journal Article |
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2015 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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118 |
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19 |
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194303 |
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terahertz detectors, asymmetric carbon nanotubes, CNT |
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Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors. |
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0021-8979 |
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1169 |
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Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G. |
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A microwave reflection readout scheme for hot electron bolometric direct detector |
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Journal Article |
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2015 |
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IEEE Trans. THz Sci. Technol. |
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IEEE Trans. THz Sci. Technol. |
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5 |
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81-84 |
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HEB detectors |
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In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout
scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications. |
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RPLAB @ atomics90 @ |
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950 |
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Mehdi, I.; Gol'tsman, G.; Putz, P. |
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Introduction to the mini-special-issue on the 25th international symposium on space terahertz technology (ISSTT) |
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Miscellaneous |
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2015 |
Publication |
IEEE Trans. THz Sci. Technol. |
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IEEE Trans. THz Sci. Technol. |
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5 |
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1 |
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14-15 |
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THE 25th International Symposium on Space Terahertz Technology (ISSTT) was held in Moscow, Russia, between April 27–30, 2014. The conference was organized by Moscow State Pedagogical University and the Higher School of Economics (National Research University) and Chaired by Professor Gregory Gol'tsman of Moscow State Pedagogical University. The conference was attended by roughly 150 participants from 15 countries. The technology covered by ISSTT includes detectors, devices, circuits and systems in various areas of THz science and technology. Each year this symposium brings together the global THz space science technology community, and as such, emphasizes the broad international collaboration that is required to execute these large complicated instrument programs that dominate this field. However, talks covering technologies for balloon, aircraft, and ground-based telescopes were also presented.
In this special section of IEEE Transactions on Terahertz Science and Technology, we include eight expanded papers from the 25th ISSTT symposium. The papers range from development of SIS mixers to optical adjustment systems for radio telescopes. The 26th ISSTT will be held in Boston, MA, USA, during March 16–18, 2015. Researchers and scientist involved in THz research are invited to attend this symposium (more details are at http://www.cfa.harvard.edu/events/2015/isstt2015/).
You can access the full list of papers presented at the ISSTT symposia from the National Radio Astronomy Observatory website: http://www.nrao.edu/meetings/isstt/index.shtml
Yours sincerely |
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2156-342X |
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1353 |
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Author |
Trifonov, A.; Tong, C.-Y. E.; Blundell, R.; Ryabchun, S.; Gol'tsman, G. |
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Title |
Probing the stability of HEB mixers with microwave injection |
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Journal Article |
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Year |
2015 |
Publication |
IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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2300404 (1 to 4) |
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Keywords |
NbN HEB mixer, stability, Allan-variance |
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Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%. |
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1051-8223 |
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