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de Lange, G., Krieg, J. - M., Honingh, N., Karpov, A., & Cherednichenko, S. (2008). Performance of the HIFI flight mixers. In Proc. 19th Int. Symp. Space Terahertz Technol. (pp. 98–105).
Abstract: We summarize the technology and final results of the superconducting heterodyne SIS and HEB mixers that are developed for the HIFI instrument. Within HIFI 7 frequency bands cover the frequency range from 480 GHz to 1910 GHz. We describe the different device technologies and optical coupling schemes that are used to cover the frequency bands. The efforts of the different mixer teams that participate in HIFI have contributed to an instrument that will have unprecedented sensitivity and frequency coverage.
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Karpowicz, N., Lu, X., & Zhang, X. - C. (2009). Terahertz gas photonics. J. Modern Opt., 56(10), 1137–1150.
Abstract: The underlying physics of the generation and detection of terahertz (THz) waves in gases are described. The THz wave generation process takes place in two steps: asymmetric gas ionization by two-frequency laser fields, followed by interaction of the ionized electron wave packets with the surrounding medium, producing an intense ‘echo' with tunable spectral content. In order to clarify the physical picture at the moment of ionization, the laser–atom interaction is treated through solution of the time-dependent Schrödinger equation, yielding an ab initio understanding of the release of the electron wave packets. The second step, where the electrons interact with the surrounding plasma is treated analytically. The resulting pressure dependence of the THz radiation is explored in detail. The THz wave detection process is shown to be the result of four-wave mixing, leading to analytical expressions of the signal obtained which allow for improved optimization of systems that exploit these effects.
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Jang, Y. R., Yoo, K. - H., & Park, S. M. (2010). Rapid thermal annealing of ZnO thin films grown at room temperature. J. Vac. Sci. Technol. A, 28(2), 4.
Abstract: The authors successfully obtained high quality ZnO thin films by growing them at room temperature (RT) and postannealing by rapid thermal annealing (RTA). The thin films were grown by pulsed laser deposition on Si (100) substrates at RT, and RTA was performed under various temperatures and ambient conditions. Based on the UV emission to visible emission ratio in RT photoluminescence (PL) spectra, the optimum film was obtained at annealing temperature ~700 °C in an ambient of Ar, N2, or O2 at 0.1 Torr, while the optimum annealing temperature was above 1100 °C in the air ambient at atmospheric pressure. The morphology and structure of the films in different RTA conditions were investigated by using field emission scanning electron microscopy and grazing incidence x-ray diffraction, and were discussed in conjunction with the PL data.
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Tang, L., Kocabas, S. E., Latif, S., Okyay, A. K., Ly-Gagnon, D. - S., Saraswat, K. C., et al. (2008). Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna. Nature Photonics, 2, 226–229.
Abstract: A critical challenge for the convergence of optics and electronics is that the micrometre scale of optics is significantly larger than the nanometre scale of modern electronic devices. In the conversion from photons to electrons by photodetectors, this size incompatibility often leads to substantial penalties in power dissipation, area, latency and noise. A photodetector can be made smaller by using a subwavelength active region; however, this can result in very low responsivity because of the diffraction limit of the light. Here we exploit the idea of a half-wave Hertz dipole antenna (length approx 380 nm) from radio waves, but at near-infrared wavelengths (length approx 1.3 microm), to concentrate radiation into a nanometre-scale germanium photodetector. This gives a polarization contrast of a factor of 20 in the resulting photocurrent in the subwavelength germanium element, which has an active volume of 0.00072 microm3, a size that is two orders of magnitude smaller than previously demonstrated detectors at such wavelengths.
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-. (1996). ГОСТ Р 15.011-96. Патентные исследования. Содержание и порядок проведения.
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