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ГОСТ 2.125-2008 ЕСКД Правила выполнения эскизных конструкторских документов |
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Miscellaneous |
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2008 |
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RPLAB @ kostochkin @ |
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934 |
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Kerr, A. R.; Feldman, M. J.; Pan, S.-K. |
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Receiver noise temperature, the quantum noise limit, and the role of the zero-point fluctuations |
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Journal Article |
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1996 |
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Electronics division internal report NO. 304 |
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1-10 |
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RPLAB @ atomics90 @ |
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947 |
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Meledin D.; Desmaris V.; Ferm S.-E.; Fredrixon M.; Henke D.; Lapkin I.; Nyström O.; Pantaleev M.; Pavolotsky A.; Strandberg M.; Sundin E.; Belitsky V. |
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Title |
APEX Band T2: A 1.25 – 1.39 THz Waveguide Balanced HEB Receiver |
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Journal Article |
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2008 |
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181-185 |
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A waveguide 1.25–1.39 THz Hot Electron Bolometer (HEB) balanced receiver was successfully developed, characterized and installed at the Atacama Pathfinder EXperiment (APEX) telescope. The receiver employs a quadrature balanced scheme using a waveguide 90-degree 3 dB RF hybrid, HEB mixers and a 180-degree IF hybrid. The HEB mixers are based on ultrathin NbN film deposited on crystalline quartz with a MgO buffer layer. Integrated into the multi-channel APEX facility receiver (SHeFI), the results presented here demonstrate exceptional performance; a receiver noise temperature of 1000 K measured at the telescope at the center of the receiver IF band 2-4 GHz, and at an LO frequency of 1294 GHz. Stability of the receiver is fully in line with the SIS mixer bands of the SHeFI, and gives a spectroscopic Allan time of more than 200 s with a noise bandwidth of 1 MHz. |
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RPLAB @ atomics90 @ |
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974 |
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Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
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Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
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Journal Article |
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1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3216-3219 |
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RSFQ, NbN, SIS |
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A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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1081 |
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Benz, A. O.; Bruderer, S.; van Dishoeck, E. F.; Stäuber, P.; Wampfler, S. F.; Melchior, M.; Dedes, C.; Wyrowski, F.; Doty, S. D.; van der Tak, F.; Bächtold, W.; Csillaghy, A.; Megej, A.; Monstein, C.; Soldati, M.; Bachiller, R.; Baudry, A.; Benedettini, M.; Bergin, E.; Bjerkeli, P.; Blake, G. A.; Bontemps, S.; Braine, J.; Caselli, P.; Cernicharo, J.; Codella, C.; Daniel, F.; di Giorgio, A. M.; Dieleman, P.; Dominik, C.; Encrenaz, P.; Fich, M.; Fuente, A.; Giannini, T.; Goicoechea, J. R.; de Graauw, Th.; Helmich, F.; Herczeg, G. J.; Herpin, F.; Hogerheijde, M. R.; Jacq, T.; Jellema, W.; Johnstone, D.; Jørgensen, J. K.; Kristensen, L. E.; Larsson, B.; Lis, D.; Liseau, R.; Marseille, M.; McCoey, C.; Melnick, G.; Neufeld, D.; Nisini, B.; Olberg, M.; Ossenkopf, V.; Parise, B.; Pearson, J. C.; Plume, R.; Risacher, C.; Santiago-García, J.; Saraceno, P.; Schieder, R.; Shipman, R.; Stutzki, J.; Tafalla, M.; Tielens, A. G. G. M.; van Kempen, T. A.; Visser, R.; Yıldız, U. A. |
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Title |
Hydrides in young stellar objects: Radiation tracers in a protostar-disk-outflow system |
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Journal Article |
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2010 |
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Astron. Astrophys. |
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521 |
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L35 (1 to 5) |
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HEB mixer applications, HIFI, Herschel |
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Context. Hydrides of the most abundant heavier elements are fundamental molecules in cosmic chemistry. Some of them trace gas irradiated by UV or X-rays.
Aims. We explore the abundances of major hydrides in W3 IRS5, a prototypical region of high-mass star formation.
Methods. W3 IRS5 was observed by HIFI on the Herschel Space Observatory with deep integration (2500 s) in 8 spectral regions.
Results. The target lines including CH, NH, H3O+, and the new molecules SH+, H2O+, and OH+ are detected. The H2O+ and OH+ J = 1–0 lines are found mostly in absorption, but also appear to exhibit weak emission (P-Cyg-like). Emission requires high density, thus originates most likely near the protostar. This is corroborated by the absence of line shifts relative to the young stellar object (YSO). In addition, H2O+ and OH+ also contain strong absorption components at a velocity shifted relative to W3 IRS5, which are attributed to foreground clouds.
Conclusions. The molecular column densities derived from observations correlate well with the predictions of a model that assumes the main emission region is in outflow walls, heated and irradiated by protostellar UV radiation. |
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1082 |
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