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Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
![find book details (via ISBN) isbn](img/isbn.gif)
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Title |
Integrated contra-directional coupler for NV-centers photon filtering |
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Conference Article |
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Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Proc. 32-nd EMSS |
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354-360 |
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NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings |
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Abstract |
We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds. |
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2724-0029 |
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978-88-85741-44-7 |
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32nd European Modeling & Simulation Symposium |
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1839 |
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Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
![find book details (via ISBN) isbn](img/isbn.gif)
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Title |
Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds |
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Conference Article |
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Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Proc. 32-nd EMSS |
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344-348 |
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The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength. |
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NV-centers, nanodiamonds |
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2724-0029 |
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978-88-85741-44-7 |
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32nd European Modeling & Simulation Symposium |
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1840 |
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Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Receiver measurements of pHEB beam lead mixers on 3-μm silicon |
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Conference Article |
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2005 |
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Proc. 30th IRMMW / 13th THz |
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Proc. 30th IRMMW / 13th THz |
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271-272 |
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We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz. |
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Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics |
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1460 |
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Ekström, H.; Kroug, M.; Belitsky, V.; Kollberg, E.; Olsson, H.; Goltsman, G.; Gershenzon, E.; Yagoubov, P.; Voronov, B.; Yngvesson, S. |
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Title |
Hot electron mixers for THz applications |
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Conference Article |
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Year |
1996 |
Publication |
Proc. 30th ESLAB |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Proc. 30th ESLAB |
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207-210 |
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NbN HEB mixers |
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We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K. |
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Noordwijk, Netherlands |
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Rolfe, E. J.; Pilbratt, G. |
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Submillimetre and Far-Infrared Space Instrumentation |
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1606 |
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Author |
Tretyakov, Ivan; Kaurova, N.; Voronov, B. M.; Goltsman, G. N. |
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Title |
About effect of the temperature operating conditions on the noise temperature and noise bandwidth of the terahertz range NbN hot-electron bolometers |
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Abstract |
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2018 |
Publication |
Proc. 29th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Proc. 29th Int. Symp. Space Terahertz Technol. |
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113 |
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NbN HEB mixer |
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Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) and NbN bridge length are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb ≪ Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K. |
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1313 |
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