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Author |
Gol'tsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Hot electron bolometric mixers: new terahertz technology |
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Journal Article |
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Year |
1999 |
Publication |
Infrared Physics & Technology |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
Infrared Physics & Technology |
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40 |
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3 |
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199-206 |
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NbN HEB mixers |
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This paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixers has crossed the level of 1 K GHz−1 at 430 GHz (410 K), 600–650 GHz (480 K), 750 GHz (600 K), 810 GHz (780 K) and is close to that level at 1.1 THz (1250 K) and 2.5 THz (4500 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and about 100 nW for mixers made by e-beam lithography. A waveguide version of 800 GHz receiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, AZ, to conduct astronomical observations of known submillimeter lines (CO, J=7→6, CI, J=2→1). It was proved that the receiver works as a practical instrument. |
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1350-4495 |
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1570 |
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Schubert, J.; Semenov, A.; Hübers, H.-W.; Gol'tsman, G.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Broad-band terahertz NbN hot-electron bolometric mixer |
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Conference Article |
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Year |
1999 |
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Inst. Phys. Conf. |
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Inst. Phys. Conf. |
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167 |
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663-666 |
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NbN HEB mixers |
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4th Europ. Conf. on Appl. Superconductivity, Barcelona, Spain, 14-17 September 1999 |
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1578 |
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Kroug, M.; Yagoubov, P.; Gol'tsman, G.; Kollberg, E. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies |
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Conference Article |
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1997 |
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Inst. Phys. Conf. Ser. |
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Inst. Phys. Conf. Ser. |
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1 |
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405-408 |
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NbN HEB mixers |
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Veldhoven |
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Bristol |
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0951-3248 |
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3rd Eur. Conf. on Applied Superconductivity |
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1600 |
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Gousev, Y. P.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M.; Semenov, A. D.; Barowski, H. S.; Nebosis, R. S.; Renk, K. F. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Quasioptical superconducting hot electron bolometer for submillmeter waves |
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Journal Article |
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1996 |
Publication |
Int. J. of Infrared and Millimeter Waves |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
Int. J. of Infrared and Millimeter Waves |
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17 |
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2 |
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317-331 |
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NbN HEB |
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We report on a superconducting hot electron bolometer coupled to radiation via a broadband antenna. The bolometer, a structured NbN film, was patterned on a thin dielectric membrane between terminals of a gold slotline antenna. We investigated the response to submillimeter radiation (wave-lengths ∼ 0.1 mm to 0.7 mm) in the fundamental Gaussian mode. We found that the directivity of the antenna was constant within a factor of 2.5 through the whole experimental range. The noise equivalent power of the bolometer at 119 µm was ∼ 3 · 10−13 W/Hz1/2; a time constant of ∼ 160 ps was estimated. |
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0195-9271 |
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1618 |
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Chen, J.; Kang, L.; Jin, B. B.; Xu, W. W.; Wu, P. H.; Zhang, W.; Jiang, L.; Li, N.; Shi, S. C.; Gol'tsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Properties of terahertz superconducting hot electron bolometer mixers |
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Journal Article |
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2008 |
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Int. J. Terahertz Sci. Technol. |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
Int. J. Terahertz Sci. Technol. |
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1 |
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1 |
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37-41 |
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Keywords |
NbN HEB mixers, noise temperature |
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A quasi-optical superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixer has been fabricated and measured in the terahertz (THz) frequency range of 0.5~2.52 THz. A receiver noise temperature of 2000 K at 2.52 THz has been obtained for the mixer without corrections. Also, the effect of a Parylene C anti-reflection (AR) coating on the silicon (Si) lens has been studied. |
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