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	Author	Baeva, E.; Sidorova, M.; Korneev, A.; Goltsman, G.
	Title	Precise measurement of the thermal conductivity of superconductor			Type	Conference Article
	Year	2018	Publication	Proc. AIP Conf.	Abbreviated Journal	Proc. AIP Conf.
	Volume	1936	Issue	1	Pages	020003 (1 to 4)
	Keywords	NbN SSPD, SNSPD
	Abstract	Measuring the thermal properties such as the heat capacity provide information about intrinsic mechanisms operated inside. In general, the ratio between electron and phonon specific heat Ce/Cp shows how the absorbed energy shared between electron and phonon subsystems. In this work we make estimations for amplitude-modulated absorption of THz radiation technique for investigation of the ratio Ce/Cp in superconducting Niobium Nitride (NbN) at T = Tc. Our results indicates that experimentally the frequency of modulation has to be extra large to extract the quantity. We perform a new technique allowed to work at low frequency with accurately measurement of absorbed power.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	doi:10.1063/1.5025441			Serial	1311
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	Author	Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A.
	Title	Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures			Type	Abstract
	Year	2019	Publication	Proc. Amorphous and Nanostructured Chalcogenides	Abbreviated Journal	Proc. Amorphous and Nanostructured Chalcogenides
	Volume		Issue		Pages	47-48
	Keywords	optical waveguides
	Abstract	The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.
	Address
	Corporate Author				Thesis
	Publisher	Technical University of Moldova	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Poster			Approved	no
	Call Number				Serial	1281
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	Author	Kollberg, Erik L.; Gershenzon, E.; Goltsman, G.; Yngvesson, K. S.
	Title	Hot electron mixers, the potential competition			Type	Conference Article
	Year	1992	Publication	Proc. ESA Symp. on Photon Detectors for Space Instrumentation	Abbreviated Journal	Proc. ESA Symp. on Photon Detectors for Space Instrumentation
	Volume		Issue		Pages	201-206
	Keywords	HEB mixers
	Abstract	There is an urgent need in radio astronomy for low noise heterodyne receivers for frequencies above about 500 GHz. It is not certain that mixers based on superconducting quasiparticle tunnelling (SIS mixers) may turn out to be the answer to this need. In order to try to find an alternative way for realizing low noise heterodyne receivers for submillimeter waves, so called hot electron bolometric effects for mixing are now being investigated. Two basically different approaches are tried, one based on semiconductors and one on superconductors. Both methods are briefly discussed in this overview paper.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	ESA Symposium on Photon Detectors for Space Instrumentation
	Notes				Approved	no
	Call Number				Serial	1667
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	Author	Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Silicon room temperature IR detectors coated with Ag₂S quantum dots			Type	Conference Article
	Year	2019	Publication	Proc. IWQO	Abbreviated Journal	Proc. IWQO
	Volume		Issue		Pages	369-371
	Keywords	silicon detector, quantum dot, IR, surface states
	Abstract	For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-89513-451-1	Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1154
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	Author	Goltsman, G.
	Title	Quantum-photonic integrated circuits			Type	Conference Article
	Year	2019	Publication	Proc. IWQO	Abbreviated Journal	Proc. IWQO
	Volume		Issue		Pages	22-23
	Keywords	WSSPD, waveguide SSPD, SNSPD, quantum optics, integrated optics, superconducting nanowire single-photon detector
	Abstract	We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1287
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	Author	Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G.
	Title	Superconducting single photon detector integrated with optical cavity			Type	Conference Article
	Year	2011	Publication	Proc. MLPLIT	Abbreviated Journal	Proc. MLPLIT
	Volume		Issue		Pages	143-145
	Keywords	NbN SSPD, cavity
	Abstract
	Address	Suzdal / Vladimir (Russia)
	Corporate Author				Thesis
	Publisher	Modern laser physics and laser-information technologies for science and manufacture	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	1st international russian-chinese conference / youthschool-workshop
	Notes	September 23-28, 2011			Approved	no
	Call Number				Serial	1385
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	Author	Maslennikova, A.; Larionov, P.; Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G.
	Title	Noise equivalent power and dynamic range of NBN hot-electron bolometers			Type	Conference Article
	Year	2011	Publication	Proc. MLPLIT	Abbreviated Journal	Proc. MLPLIT
	Volume		Issue		Pages	146-148
	Keywords	NbN HEB
	Abstract
	Address	Suzdal / Vladimir (Russia)
	Corporate Author				Thesis
	Publisher	Modern laser physics and laser-information technologies for science and manufacture	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	1st international russian-chinese conference / youthschool-workshop
	Notes	September 23-28, 2011			Approved	no
	Call Number				Serial	1386
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	Author	Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G.
	Title	Graphene-based lateral Schottky diodes for detecting terahertz radiation			Type	Conference Article
	Year	2018	Publication	Proc. Optical Sensing and Detection V	Abbreviated Journal	Proc. Optical Sensing and Detection V
	Volume	10680	Issue		Pages	30-39
	Keywords	graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves
	Abstract	Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
	Address
	Corporate Author				Thesis
	Publisher	Spie	Place of Publication		Editor	Berghmans, F.; Mignani, A.G.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	10.1117/12.2307020			Serial	1306
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	Author	Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N.
	Title	Ultrafast superconducting bolometer receivers for terahertz applications			Type	Abstract
	Year	2009	Publication	Proc. PIERS	Abbreviated Journal	Proc. PIERS
	Volume		Issue		Pages	867
	Keywords	HEB
	Abstract	The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe.
	Address	Moscow, Russia
	Corporate Author				Thesis
	Publisher	The Electromagnetics Academy	Place of Publication	777 Concord Avenue, Suite 207 Cambridge, MA 02138	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1559-9450	ISBN	978-1-934142-09-7	Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ sasha @ ozhegovultrafast			Serial	1022
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	Author	Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Lobanov, Yu; Shcherbatenko, M.; Korneev, A; Pernice, W.; Goltsman, G.
	Title	Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application			Type	Conference Volume
	Year	2017	Publication	Proc. SPBOPEN	Abbreviated Journal	Proc. SPBOPEN
	Volume		Issue		Pages	421-422
	Keywords	waveguide, SSPD, SNSPD
	Abstract	By adopting a travelling-wave geometry approach, integrated superconductor- nanophotonic devices were fabricated. The architecture consists of a superconducting NbN- nanowire atop of a silicon nitride (Si 3 N 4 ) nanophotonic waveguide. NbN-nanowire was operated as a single-photon counting detector, with up to 92% on-chip detection efficiency (OCDE), in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 10^6 in C-band at 1550 nm wavelength.
	Address	St. Petersburg, Russia
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1140			Approved	no
	Call Number				Serial	1256
Permanent link to this record