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Semenov, A. D.; Il'in, K.; Siegel, M.; Smirnov, A.; Pavlov, S.; Richter, H.; Hübers, H.-W. |
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Title |
Evidence of non-bolometric mixing in the bandwidth of a hot-electron bolometer |
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Year |
2006 |
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Superconductor Science and Technology |
Abbreviated Journal  |
Supercond. Sci. Technol. |
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19 |
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10 |
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1051-1056 |
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HEB |
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0953-2048 |
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536 |
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Uzawa, Y.; Miki, S.; Wang, Z.; Kawakami, A.; Kroug, M.; Yagoubov, P.; Kollberg, E. |
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Title |
Performance of a quasi-optical NbN hot-electron bolometric mixer at terahertz frequencies |
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Journal Article |
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Year |
2002 |
Publication |
Superconductor Science and Technology |
Abbreviated Journal |
Supercond. Sci. Technol. |
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15 |
Issue |
1 |
Pages |
141-145 |
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Keywords |
HEB, mixer |
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0953-2048 |
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RPLAB @ s @ |
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548 |
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Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. |
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Title |
Temperature dependence of the receiver noise temperature and IF bandwidth of superconducting hot electron bolometer mixers |
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Journal Article |
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Year |
2014 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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27 |
Issue |
8 |
Pages |
085013 (1 to 5) |
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Keywords |
NbN HEB mixers |
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In this paper we study the temperature dependence of the receiver noise temperature and IF noise bandwidth of superconducting hot electron bolometer (HEB) mixers. Three superconducting NbN HEB devices of different transition temperatures (Tc) are measured at 0.85 THz and 1.4 THz at different bath temperatures (Tbath) between 4 K and 9 K. Measurement results demonstrate that the receiver noise temperature of superconducting NbN HEB devices is nearly constant for Tbath/Tc, less than 0.8, which is consistent with the simulation based on a distributed hot-spot model. In addition, the IF noise bandwidth appears independent of Tbath/Tc, indicating the dominance of phonon cooling in the investigated HEB devices. |
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0953-2048 |
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1358 |
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Shurakov, A.; Lobanov, Y.; Goltsman, G. |
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Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications |
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2015 |
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Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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29 |
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2 |
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023001 |
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HEB |
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The discovery of hot-electron phenomena in a thin superconducting film in the last century was followed by numerous experimental studies of its appearance in different materials aiming for a better understanding of the phenomena and consequent implementation of terahertz detection systems for practical applications. In contrast to the competitors such as superconductor-insulator-superconductor tunnel junctions and Schottky diodes, the hot electron bolometer (HEB) did not demonstrate any frequency limitation of the detection mechanism. The latter, in conjunction with a decent performance, rapidly made the HEB mixer the most attractive candidate for heterodyne observations at frequencies above 1 THz. The successful operation of practical instruments (the Heinrich Hertz Telescope, the Receiver Lab Telescope, APEX, SOFIA, Hershel) ensures the importance of the HEB technology despite the lack of rigorous theoretical routine for predicting the performance. In this review, we provide a summary of experimental and theoretical studies devoted to understanding the HEB physics, and an overview of various fabrication routes and materials. |
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1156 |
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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
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Title |
Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
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2019 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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32 |
Issue |
7 |
Pages |
075003 |
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Keywords |
NbN HEB mixer, GaN buffer layer, sapphire substrate |
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We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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Antipov_2019 |
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1277 |
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