| Records |
| Author |
Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. |
| Title |
On chip carbon nanotube tunneling spectroscopy |
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Journal Article |
| Year |
2020 |
Publication |
Fullerenes, Nanotubes and Carbon Nanostructures |
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| Volume |
28 |
Issue |
1 |
Pages |
50-53 |
| Keywords |
carbon nanotubes, CNT, scanning tunneling microscope, STM |
| Abstract |
We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes. |
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Taylor & Francis |
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doi:10.1080/1536383X.2019.1671365 |
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1269 |
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| Author |
Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R. |
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Nano-structured superconducting single-photon detectors |
Type |
Journal Article |
| Year |
2004 |
Publication |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
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| Volume |
520 |
Issue |
1-3 |
Pages |
527-529 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications. |
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0168-9002 |
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1495 |
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Il'in, K.; Siegel, M.; Semenov, A.; Engel, A.; Hübers, H.-W.; Hollmann, E.; Gol'tsman, G.; Voronov, B. |
| Title |
Thickness dependence of superconducting properties of ultrathin Nb and NbN films |
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Conference Article |
| Year |
2004 |
Publication |
AKF-Frühjahrstagung |
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Nb, NbN films, has potential plagiarism |
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Berlin-Adlershof |
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1503 |
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