| Records |
| Author |
Lobanov, Y. V.; Tong, Cheuk-Yu E.; Hedden, A. S.; Blundell, R.; Gol'tsman, G. N. |
| Title |
Microwave-assisted슠measurement슠of the슠frequency슠response슠of슠terahertz슠HEB슠mixers슠with a슠fourier슠transform슠spectrometer |
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Conference Article |
| Year |
2010 |
Publication |
21st International Symposium on Space Terahertz Technology |
Abbreviated Journal  |
21st ISSTT |
| Volume |
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Issue |
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Pages |
420-423 |
| Keywords |
HEB mixer |
| Abstract |
We describe a novel method of operation of the HEB direct detector for use with a Fourier Transform Spectrometer. Instead of elevating the bath temperature, we have measured the RF response of waveguide HEB mixers by applying microwave radiation to select appropriate bias conditions. In our experiment, a microwave signal is injected into the HEB mixer via its IF port. By choosing an appropriate injection level, the device can be operated close to the desired operating point. Furthermore, we have shown that both thermal biasing and microwave injection can reproduce the same spectral response of the HEB mixer. However, with the use of microwave injection, there is no need to wait for the mixer to reach thermal equilibrium, so characterisation can be done in less time. Also, the liquid helium consumption for our wet cryostat is also reduced. We have demonstrated that the signalto-noise ratio of the FTS measurements can be improved with microwave injection. |
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RPLAB @ gujma @ |
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725 |
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Loudkov, D.; Tong, C. Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G. |
| Title |
An investigation of the performance of the superconducting HEB슠mixer as a function of its RF슠embedding impedance |
Type |
Journal Article |
| Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
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15 |
Issue |
2 |
Pages |
472-475 |
| Keywords |
HEB mixer |
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IEEE |
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371 |
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Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Gol'tsman, G.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Verevkin, A.; Sobolewski, R. |
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Superconducting single-photon ultrathin NbN film detector |
Type |
Journal Article |
| Year |
2005 |
Publication |
Quantum Electronics |
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35 |
Issue |
8 |
Pages |
698-700 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps. |
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Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN |
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383 |
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Gol'tsman, G.; Korneev, A.; Minaeva, O.; Antipov, A.; Divochiy, A.; Kaurova, N.; Voronov, B.; Pan, D.; Cross, A.; Pearlman, A.; Komissarov, I.; Slysz, W.; Sobolewski, R. |
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Middle-infrared to visible-light ultrafast superconducting single-photon detector |
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Conference Article |
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2006 |
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Proc. ASC |
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Seattle |
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RPLAB @ s @ SSPD_cavity_ASC |
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389 |
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Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. |
| Title |
Ultrafast superconducting single-photon optical detectors and their applications |
Type |
Journal Article |
| Year |
2003 |
Publication |
IEEE Trans. Appl. Supercond. |
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13 |
Issue |
2 |
Pages |
1151-1157 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications. |
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1051-8223 |
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509 |
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