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Author Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. url  openurl
  Title Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum Type Journal Article
  Year 1987 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 46 Issue 5 Pages 237-238  
  Keywords YBCO HTS detectors  
  Abstract For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6.  
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  Notes Approved no  
  Call Number Serial 1703  
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Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound Type Journal Article
  Year 1987 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 46 Issue 6 Pages 285-287  
  Keywords YBCO HTS HEB  
  Abstract For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals.  
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  Call Number Serial 1706  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Observation of the free-exciton spectrum at submillimeter wavelengths Type Journal Article
  Year 1972 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 16 Issue 4 Pages 161-162  
  Keywords Ge, energy spectrum, free excitons  
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  Notes Approved no  
  Call Number Serial 1736  
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Author Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Heating of quasiparticles in a superconducting film in the resistive state Type Journal Article
  Year 1981 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 34 Issue 5 Pages 268-271  
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  Notes Approved no  
  Call Number Serial 1716  
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Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state Type Journal Article
  Year 1982 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 36 Issue 7 Pages 296-299  
  Keywords HEB  
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  Notes Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии Approved no  
  Call Number Serial 1717  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. url  openurl
  Title Cross section for binding of free carriers into excitons in germanium Type Journal Article
  Year 1981 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 33 Issue 11 Pages 574  
  Keywords Ge, excitons, photoconductivity  
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  Notes Approved no  
  Call Number Serial 1718  
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Author Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. url  openurl
  Title Carrier lifetime in excited states of shallow impurities in germanium Type Journal Article
  Year 1977 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 25 Issue 12 Pages 539-543  
  Keywords Ge, shallow impurities, excited states  
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  Notes Approved no  
  Call Number Serial 1726  
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Author Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. url  openurl
  Title Intervalley cyclotron-impurity resonance of electrons in n-Ge Type Journal Article
  Year 1976 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 24 Issue 3 Pages 125-128  
  Keywords n-Ge, cyclotron-impurity resonance  
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  Notes Approved no  
  Call Number Serial 1730  
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Author Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. url  openurl
  Title Energy spectrum of free excitons in germanium Type Journal Article
  Year 1973 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 18 Issue 3 Pages 93  
  Keywords Ge, free excitons, energy spectrum  
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  Notes Approved no  
  Call Number Serial 1734  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. url  openurl
  Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 14 Issue 5 Pages 185-186  
  Keywords Ge, Si, neutral impurity atom, binding energy  
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  Notes Approved no  
  Call Number Serial 1739  
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Author Gershenzon, E. M.; Gol'tsman, G. N. url  openurl
  Title Transitions of electrons between excited states of donors in germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 14 Issue 2 Pages 63-65  
  Keywords Ge, donors, excited states  
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  Notes Approved no  
  Call Number Serial 1740  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. url  openurl
  Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 14 Issue 6 Pages 241  
  Keywords Ge, gamma irradiation, defects, impurities  
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  Notes Approved no  
  Call Number Serial 1742  
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Author Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. url  doi
openurl 
  Title Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon Type Journal Article
  Year 2001 Publication Jetp Lett. Abbreviated Journal (up) Jetp Lett.  
  Volume 73 Issue 1 Pages 44-47  
  Keywords uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field  
  Abstract The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.  
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  ISSN 0021-3640 ISBN Medium  
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  Call Number Serial 1752  
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Author Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. url  openurl
  Title Absorption spectra in electron transitions between excited states of impurities in germanium Type Journal Article
  Year 1975 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 22 Issue 4 Pages 95-97  
  Keywords Ge, impurities, excited states, absorption spectra  
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  Call Number Serial 1773  
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Author Florya, I. N.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Korneev, A. A.; Goltsman, G. N. url  doi
openurl 
  Title Photon counting statistics of superconducting single-photon detectors made of a three-layer WSi film Type Journal Article
  Year 2018 Publication Low Temp. Phys. Abbreviated Journal (up) Low Temp. Phys.  
  Volume 44 Issue 3 Pages 221-225  
  Keywords WSi SSPD, SNSPD  
  Abstract Superconducting nanowire single-photon detectors (SNSPD) are used in quantum optics when record-breaking time resolution, high speed, and exceptionally low levels of dark counts (false readings) are required. Their detection efficiency is limited, however, by the absorption coefficient of the ultrathin superconducting film for the detected radiation. One possible way of increasing the detector absorption without limiting its broadband response is to make a detector in the form of several vertically stacked layers and connect them in parallel. For the first time we have studied single-photon detection in a multilayer structure consisting of three superconducting layers of amorphous tungsten silicide (WSi) separated by thin layers of amorphous silicon. Two operating modes of the detector are illustrated: an avalanche regime and an arm-trigger regime. A shift in these modes occurs at currents of ∼0.5–0.6 times the critical current of the detector.

This work was supported by technical task No. 88 for scientific research at the National Research University “Higher School of Economics,” Grant No. 14.V25.31.0007 from the Ministry of Education and Science of Russia, and the work of G. N. Goltsman was supported by task No. 3.7328.2017/VU of the Ministry of Education and Science of Russia.		  
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  ISSN 1063-777X ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1310  
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