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Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
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Title |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
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Journal Article |
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Year |
2018 |
Publication |
Microelectronic Engineering |
Abbreviated Journal  |
Microelectronic Engineering |
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Volume |
195 |
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26-31 |
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In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range. |
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0167-9317 |
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1155 |
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Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
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Title |
GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits |
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Journal Article |
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Year |
2003 |
Publication |
Microelectronic Engineering |
Abbreviated Journal |
Microelectronic Engineering |
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Volume |
69 |
Issue |
2-4 |
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274-278 |
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Keywords |
NbN SSPD, SNSPD, applications |
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We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics. |
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0167-9317 |
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1511 |
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Vetter, A.; Ferrari, S.; Rath, P.; Alaee, R.; Kahl, O.; Kovalyuk, V.; Diewald, S.; Goltsman, G. N.; Korneev, A.; Rockstuhl, C.; Pernice, W. H. P. |
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Title |
Cavity-enhanced and ultrafast superconducting single-photon detectors |
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Journal Article |
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Year |
2016 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
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Volume |
16 |
Issue |
11 |
Pages |
7085-7092 |
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Keywords |
SSPD; SNSPD; multiphoton detection; nanophotonic circuit; photonic crystal cavity |
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Abstract |
Ultrafast single-photon detectors with high efficiency are of utmost importance for many applications in the context of integrated quantum photonic circuits. Detectors based on superconductor nanowires attached to optical waveguides are particularly appealing for this purpose. However, their speed is limited because the required high absorption efficiency necessitates long nanowires deposited on top of the waveguide. This enhances the kinetic inductance and makes the detectors slow. Here, we solve this problem by aligning the nanowire, contrary to usual choice, perpendicular to the waveguide to realize devices with a length below 1 mum. By integrating the nanowire into a photonic crystal cavity, we recover high absorption efficiency, thus enhancing the detection efficiency by more than an order of magnitude. Our cavity enhanced superconducting nanowire detectors are fully embedded in silicon nanophotonic circuits and efficiently detect single photons at telecom wavelengths. The detectors possess subnanosecond decay ( approximately 120 ps) and recovery times ( approximately 510 ps) and thus show potential for GHz count rates at low timing jitter ( approximately 32 ps). The small absorption volume allows efficient threshold multiphoton detection. |
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Institute of Physics, University of Munster , 48149 Munster, Germany |
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1530-6984 |
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PMID:27759401 |
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1208 |
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Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
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Title |
Helicity-sensitive plasmonic terahertz interferometer |
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Journal Article |
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Year |
2020 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
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Volume |
20 |
Issue |
10 |
Pages |
7296-7303 |
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Keywords |
graphene, plasmonic interferometer, radiation helicity, terahertz radiation |
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Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. |
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CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland |
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1530-6984 |
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PMID:32903004 |
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1781 |
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Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. |
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Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes |
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Journal Article |
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Year |
2015 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
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Volume |
15 |
Issue |
12 |
Pages |
7859-7866 |
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carbon nanotubes, CNT, tunable superconductivity, van Hove singularities |
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Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube. |
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Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States |
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1530-6984 |
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PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 |
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1782 |
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Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Title |
Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector |
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Journal Article |
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Year |
2020 |
Publication |
Nanomaterials (Basel) |
Abbreviated Journal |
Nanomaterials (Basel) |
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Volume |
10 |
Issue |
5 |
Pages |
1-12 |
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Keywords |
detector; quantum dots; short-wave infrared range; silicon |
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Abstract |
In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. |
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Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia |
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2079-4991 |
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PMID:32365694; PMCID:PMC7712218 |
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1151 |
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Marksteiner, M.; Divochiy, A.; Sclafani, M.; Haslinger, P.; Ulbricht, H.; Korneev, A.; Semenov, A.; Gol'tsman, G.; Arndt, M. |
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Title |
A superconducting NbN detector for neutral nanoparticles |
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Journal Article |
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Year |
2009 |
Publication |
Nanotechnol. |
Abbreviated Journal |
Nanotechnol. |
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Volume |
20 |
Issue |
45 |
Pages |
455501 |
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Keywords |
SSPD; SNSPD; *Electric Conductivity; Microscopy, Electron, Scanning; Nanoparticles/*chemistry/ultrastructure; Nanotechnology/*methods; *Photons |
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We present a proof-of-principle study of superconducting single photon detectors (SSPD) for the detection of individual neutral molecules/nanoparticles at low energies. The new detector is applied to characterize a laser desorption source for biomolecules and allows retrieval of the arrival time distribution of a pulsed molecular beam containing the amino acid tryptophan, the polypeptide gramicidin as well as insulin, myoglobin and hemoglobin. We discuss the experimental evidence that the detector is actually sensitive to isolated neutral particles. |
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University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria. markus.arndt@univie.ac.at |
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0957-4484 |
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PMID:19822928 |
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Call Number |
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1239 |
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Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N. |
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Title |
Superconductivity in highly disordered NbN nanowires |
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Journal Article |
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Year |
2016 |
Publication |
Nanotechnol. |
Abbreviated Journal |
Nanotechnol. |
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Volume |
27 |
Issue |
47 |
Pages |
47lt02 (1 to 8) |
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Keywords |
NbN nanowires |
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The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links. |
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National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia |
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0957-4484 |
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PMID:27782000 |
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Call Number |
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1332 |
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Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. |
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Title |
Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices |
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Journal Article |
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Year |
2018 |
Publication |
Nanotechnol. |
Abbreviated Journal |
Nanotechnol. |
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Volume |
29 |
Issue |
24 |
Pages |
245204 (1 to 8) |
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single layer graphene, graphene nanoribbons |
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We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity. |
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Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia |
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0957-4484 |
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PMID:29553479 |
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Call Number |
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1308 |
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Sclafani, M.; Marksteiner, M.; Keir, F. M. L.; Divochiy, A.; Korneev, A.; Semenov, A.; Gol'tsman, G.; Arndt, M. |
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Sensitivity of a superconducting nanowire detector for single ions at low energy |
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Journal Article |
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2012 |
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Nanotechnol. |
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Nanotechnol. |
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23 |
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6 |
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065501 (1 to 5) |
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NbN SSPD, SNSPD, superconducting single ion detector, SSID, SNSID |
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We report on the characterization of a superconducting nanowire detector for ions at low kinetic energies. We measure the absolute single-particle detection efficiency eta and trace its increase with energy up to eta = 100%. We discuss the influence of noble gas adsorbates on the cryogenic surface and analyze their relevance for the detection of slow massive particles. We apply a recent model for the hot-spot formation to the incidence of atomic ions at energies between 0.2 and 1 keV. We suggest how the differences observed for photons and atoms or molecules can be related to the surface condition of the detector and we propose that the restoration of proper surface conditions may open a new avenue for SSPD-based optical spectroscopy on molecules and nanoparticles. |
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Vienna Center for Quantum Science and Technology, Faculty of Physics, University of Vienna, Vienna, Austria |
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0957-4484 |
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PMID:22248823 |
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Call Number |
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1380 |
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Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G. |
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Title |
Resonant terahertz detection using graphene plasmons |
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Journal Article |
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Year |
2018 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
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Volume |
9 |
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5392 (1 to 8) |
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THz, graphene plasmons |
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Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications. |
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Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru |
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2041-1723 |
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1148 |
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Author |
Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
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Title |
Tunnel field-effect transistors for sensitive terahertz detection |
Type |
Journal Article |
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Year |
2021 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
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Volume |
12 |
Issue |
1 |
Pages |
543 |
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Keywords |
field-effect transistors, bilayer graphene, BLG |
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Abstract |
The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. |
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Address |
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu |
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English |
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2041-1723 |
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PMID:33483488; PMCID:PMC7822863 |
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no |
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Call Number |
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Serial |
1261 |
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Author |
Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. |
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Title |
High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits |
Type |
Journal Article |
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Year |
2012 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
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Volume |
3 |
Issue |
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Pages |
1325 (1 to 10) |
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Keywords |
waveguide SSPD |
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Abstract |
Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics. |
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Address |
Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA |
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2041-1723 |
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PMID:23271658; PMCID:PMC3535416 |
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no |
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Call Number |
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Serial |
1375 |
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Author |
Divochiy, Aleksander; Marsili, Francesco; Bitauld, David; Gaggero, Alessandro; Leoni, Roberto; Mattioli, Francesco; Korneev, Alexander; Seleznev, Vitaliy; Kaurova, Nataliya; Minaeva, Olga; Gol'tsman, Gregory; Lagoudakis, Konstantinos G.; Benkhaoul, Moushab; Lévy, Francis; Fiore, Andrea |
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Title |
Superconducting nanowire photon-number-resolving detector at telecommunication wavelengths |
Type |
Journal Article |
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Year |
2008 |
Publication |
Nat. Photon. |
Abbreviated Journal |
Nat. Photon. |
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Volume |
2 |
Issue |
5 |
Pages |
302-306 |
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Keywords |
SSPD, photon-number-resolving |
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Abstract |
Optical-to-electrical conversion, which is the basis of the operation of optical detectors, can be linear or nonlinear. When high sensitivities are needed, single-photon detectors are used, which operate in a strongly nonlinear mode, their response being independent of the number of detected photons. However, photon-number-resolving detectors are needed, particularly in quantum optics, where n-photon states are routinely produced. In quantum communication and quantum information processing, the photon-number-resolving functionality is key to many protocols, such as the implementation of quantum repeaters1 and linear-optics quantum computing2. A linear detector with single-photon sensitivity can also be used for measuring a temporal waveform at extremely low light levels, such as in long-distance optical communications, fluorescence spectroscopy and optical time-domain reflectometry. We demonstrate here a photon-number-resolving detector based on parallel superconducting nanowires and capable of counting up to four photons at telecommunication wavelengths, with an ultralow dark count rate and high counting frequency. |
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no |
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Serial |
916 |
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Author |
Khasminskaya, S.; Pyatkov, F.; Słowik, K.; Ferrari, S.; Kahl, O.; Kovalyuk, V.; Rath, P.; Vetter, A.; Hennrich, F.; Kappes, M. M.; Gol'tsman, G.; Korneev, A.; Rockstuhl, C.; Krupke, R.; Pernice, W. H. P. |
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Title |
Fully integrated quantum photonic circuit with an electrically driven light source |
Type |
Journal Article |
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Year |
2016 |
Publication |
Nat. Photon. |
Abbreviated Journal |
Nat. Photon. |
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Volume |
10 |
Issue |
11 |
Pages |
727-732 |
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Keywords |
Carbon nanotubes and fullerenes, Integrated optics, Single photons and quantum effects, Waveguide integrated single-photon detector |
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Abstract |
Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices. |
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RPLAB @ kovalyuk @ |
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1105 |
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