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Dryazgov, M., Semenov, A., Manova, N., Korneeva, Y., & Korneev, A. (2020). Modelling of normal domain evolution after single-photon absorption of a superconducting strip of micron width. In J. Phys.: Conf. Ser. (Vol. 1695, 012195 (1 to 4)).
Abstract: The present paper describes a modelling of normal domain evolution in superconducting strip of micron width using solving differential equations describing the temperature and current changes. The solving results are compared with experimental data. This comparison demonstrates the high accuracy of the model. In future, it is possible to employ this model for improvement of single photon detector based on micron-scale superconducting strips.
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Manova, N. N., Simonov, N. O., Korneeva, Y. P., & Korneev, A. A. (2020). Developing of NbN films for superconducting microstrip single-photon detector. In J. Phys.: Conf. Ser. (Vol. 1695, 012116 (1 to 5)).
Abstract: We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20.
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Polyakova, M. I., Korneev, A. A., & Semenov, A. V. (2020). Comparison single- and double- spot detection efficiencies of SSPD based to MoSi and NbN films. In J. Phys.: Conf. Ser. (Vol. 1695, 012146 (1 to 3)).
Abstract: In this work, we present results of quantum detector tomography of superconducting single photon detector (SSPD) based on MoSi film, and compare them with previously reported data on NbN. We find that for both materials hot spot interaction length coincides with the strip width, and the dependence of single and double-spot detection efficiencies on bias current are compatible with sufficiently large hot-spot size, approaching the strip width.
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Goltsman, G. N., Maliavkin, A. V., Ptitsina, N. G., & Selevko, A. G. (1986). Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 50, pp. 280–281).
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Gershenzon, E. M., & Gol'tsman, G. N. (1988). Effect of electromagnetic radiation on a superconductor in a magnetic field. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 52, pp. 449–451).
Abstract: The effect of electromagnetic radiation on thin superconducting films of Nb with a large number of static defects is investigated experimentally for the case where the film is in the resistive state due to an applied magnetic field and transport current. The results obtained are found to be well described by a model of spatially homogeneous electron heating. It is noted that the results obtained here for Nb films are also valid for Al, NbN, and MoRe films.
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Gershenzon, E., Goltsman, G., Elantev, A., & Kagane, M. (1978). Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 42, pp. 1142–1148).
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Gershenzon, E., Goltsman, G., Orlov, L., & Ptitsina, N. (1978). Population of excited-states of small admixtures in germanium. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 42, pp. 1154–1159). Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia.
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Blagosklonskaya, L. E., Gershenzon, E. M., Goltsman, G. N., & Elantev, A. I. (1978). Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 42, pp. 1231–1234). Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia.
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Pentin, I. V., Smirnov, A. V., Ryabchun, S. A., Gol’tsman, G. N., Vaks, V. L., Pripolzin, S. I., et al. (2011). Heterodyne source of THz range based on semiconductor superlattice multiplier. In IRMMW-THz (pp. 1–2).
Abstract: We present the results of our studies of the possibility of developing a heterodyne receiver incorporating a hot-electron bolometer mixer as the detector and a semiconductor superlattice multiplier driven by a reference synthesizer as the local oscillator. We observe that such a local oscillator offers enough power in the terahertz range to pump the HEB into the operating state.
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Vasilev, D. D., Malevannaya, E. I., Moiseev, K. M., Zolotov, P. I., Antipov, A. V., Vakhtomin, Y. B., et al. (2020). Influence of deposited material energy on superconducting properties of the WSi films. In IOP Conf. Ser.: Mater. Sci. Eng. (Vol. 781, 012013 (1 to 6)).
Abstract: WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.
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