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Kaganov, M. L., Lifshitz, I. M., & Tanatarov, L. V. (1957). Relaxation between electrons and the crystalline lattice. Sov. Phys. JETP, 4(2), 173–178.
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Gershenzon, E. M., Gershenzon, M. E., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1984). Heating of electrons in a superconductor in the resistive state by electromagnetic radiation. Sov. Phys. JETP, 59(2), 442–450.
Abstract: The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.
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Gershenzon, E. M., Gol'tsman, G. N., Elantiev, A. I., Karasik, B. S., & Potoskuev, S. E. (1988). Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state. Sov. J. Low Temp. Phys., 14(7), 414–420.
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Elant'ev, A. I., & Karasik, B. S. (1989). Effect of high-frequency current on Nb superconductive film in resistive state. Sov. J. Low Temp. Phys., 15(7), 379–383.
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Gershenzon, E. M., Gershenzon, M. E., Gol'tsman, G. N., Semyonov, A. D., & Sergeev, A. V. (1984). Heating of electrons in superconductor in the resistive state due to electromagnetic radiation. Solid State Communications, 50(3), 207–212.
Abstract: The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields.
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Pentin, I., Vakhtomin, Y., Seleznev, V., & Smirnov, K. (2020). Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation. Sci. Rep., 10(1), 16819.
Abstract: The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.
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Vystavkin, A. N. (1999). Estimation of noise equivalent power and design analysis of an andreev reflection hot-electron microbolometer for submillimeter radioastronomy. Rus. J. Radio Electron., (10).
Abstract: Results of theoretical estimations and measurements of characteristics of an Andreev reflection hot-electron microbolometer for submillimeter radioastronomy made by different researchers are reviewed and analysed. Peculiarities and characteristics of the microbolometers using two types of microthermometer for measurement of the electron temperature increment under influence of the radiation: the SIN-junction and the transition-edge sensor (TES) with electrothermal feedback – are compared. Advantages of the microbolometer with the second type of the microthermometer when the TES is used simultaneously as the absorber of radiation are shown. Methods of achievement of the best noise equivalent power of the microbolometer in such version as well as methods of the matching the microbolometer with the incident radiation flow using planar antennas and with the channel of output signal measurement using a SQUID-picoammeter are considered.
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Pentin, I., Finkel, M., Maslennikov, S., Vakhtomin, Y., Smirnov, K., Kaurova, N., et al. (2017). Superconducting hot-electron-bolometer mixers for the mid-IR. Rus. J. Radio Electron., (10), http://jre.cplire.ru/jre/oct17/9/text.pdf.
Abstract: The work presents the result of development of the NbN superconducting hot-electron-bolometer (HEB) mixer. The sensitive element of the mixer is directly coupled to mid-IR radiation, and doesn’t have planar metallic antenna. Investigations of noise characteristics of NbN HEB mixer were performed at the frequency 28.4 THz (λ = 10.6 µm) by using gas-discharge CW CO2-laser without consideration of optical and electrical losses in the heterodyne receiver. The noise temperature of NbN HEB mixer with the size of the sensitive element 10 µm × 10 µm was 2320 K (~ 1.5hν/kB) at the heterodyne frequency of 28.4 THz. The noise temperature was determined by measuring the Y-factor taking into account the term which describes fluctuations of zero-point oscillations in accordance with the fluctuation-dissipation theorem of Calle-Welton. Isothermal method was used to estimate the absorbed heterodyne radiation power which was 9 µW at the optimal operating point for the minimum noise temperature of NbN HEB mixer.
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Kooi, J. W. (2008). Advanced receivers for submillimeter and far infrared astronomy. Doctoral thesis, , .
Keywords: HEB, SIS, TES, NEP, noise temperature, IF bandwidth, waveguide, impedance, conversion gain, FTS, integrated array, stability, Allan variance, multi-layer antireflection coating
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Cherednichenko, S., Drakinskiy, V., Berg, T., Khosropanah, P., & Kollberg, E. (2008). Hot-electron bolometer terahertz mixers for the Herschel Space Observatory. Rev. Sci. Instrum., 79, 034501.
Abstract: We report on low noise terahertz mixers(1.4–1.9THz) developed for the heterodyne spectrometer onboard the Herschel Space Observatory. The mixers employ double slot antenna integrated superconducting hot-electron bolometers (HEBs) made of thin NbN films. The mixer performance was characterized in terms of detection sensitivity across the entire rf band by using a Fourier transform spectrometer (from 0.5to2.5THz, with 30GHz resolution) and also by measuring the mixernoise temperature at a limited number of discrete frequencies. The lowest mixernoise temperature recorded was 750K [double sideband (DSB)] at 1.6THz and 950KDSB at 1.9THz local oscillator (LO) frequencies. Averaged across the intermediate frequency band of 2.4–4.8GHz, the mixernoise temperature was 1100KDSB at 1.6THz and 1450KDSB at 1.9THz LO frequencies. The HEB heterodyne receiver stability has been analyzed and compared to the HEB stability in the direct detection mode. The optimal local oscillator power was determined and found to be in a 200–500nW range.
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