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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. |
| Title |
Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium |
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Journal Article |
| Year |
1986 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal  |
Sov. Phys. JETP |
| Volume |
64 |
Issue |
4 |
Pages |
889-897 |
| Keywords |
Ge, trapping of free carriers |
| Abstract |
Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3). |
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1707 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Population and lifetime of excited states of shallow impurities in Ge |
Type |
Journal Article |
| Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
49 |
Issue |
2 |
Pages |
355-362 |
| Keywords |
Ge, photothermal ionization, shallow impurities |
| Abstract |
An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. |
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1719 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
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Journal Article |
| Year |
1976 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
43 |
Issue |
1 |
Pages |
116-122 |
| Keywords |
Ge, free excitons |
| Abstract |
Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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1731 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Submillimeter spectroscopy of semiconductors |
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Journal Article |
| Year |
1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
37 |
Issue |
2 |
Pages |
299-304 |
| Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
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The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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1735 |
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Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
| Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
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Journal Article |
| Year |
1975 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
40 |
Issue |
2 |
Pages |
311-315 |
| Keywords |
Ge, cyclotron resonance |
| Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
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Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
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Journal Article |
| Year |
1983 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
| Volume |
17 |
Issue |
8 |
Pages |
908-913 |
| Keywords |
BWO spectroscopy, pure semiconductors, residual impurities |
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Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках |
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1714 |
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Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
| Title |
Germanium hot-electron narrow-band detector |
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Journal Article |
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1971 |
Publication |
Sov. Radio Engineering And Electronic Physics |
Abbreviated Journal |
Sov. Radio Engineering And Electronic Physics |
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16 |
Issue |
8 |
Pages |
1346 |
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Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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1741 |
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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
| Title |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
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Journal Article |
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1996 |
Publication |
Surface Science |
Abbreviated Journal |
Surface Science |
| Volume |
361-362 |
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569-573 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
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For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed. |
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0039-6028 |
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1609 |
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Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
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Low energy excitation in La2CuO4 |
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Journal Article |
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1990 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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3 |
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5 |
Pages |
832-837 |
| Keywords |
metal-dielectric-La2CuO4, monocrystals |
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Measurements of transmission and photoconductivity spectra in submillimeter wave length range as well as of capacity C and conductivity G in the region of acoustic frequencies of metal-dielectric-La2CuO4 system at low temperatures are performed using La2CuO4 monocrystals. Optical spectra posses a threshold character, a sharp decrease of transmission and photocoductivity signal occurs in the energy region hν>1.5 MeV. C(ω,T) and G(ω, T) dependences have a universal form typical of Debye type relaxation processes. Relaxation time dependence is of thermoactivated character τ(T)∼exp(ξ/T) with the gap value ξ≅2 meV. It is assumed that excitations with characteristic energy of ∼2 meV exist in La2CuO4. A possible nature of the detected low-energy excitations is discussed. |
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1688 |
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Gershenzon, Ye. M.; Goltsman, G. N.; Yelantyev, A. I.; Petrova, Ye. B.; Ptitsina, N. G.; Filatov, V. S. |
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Lecture demonstrations of properties of superconductors and liquid helium |
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Journal Article |
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1987 |
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USSR Rept Phys. Math. JPRS UPM |
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USSR Rept Phys. Math. JPRS UPM |
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24 |
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7 |
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51 |
| Keywords |
demonstrations, lections |
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New demonstrations for low temperature physics courses are described. Two transparent Dewar vacuum flasks fitting one inside the other with the external flask for nitrogen and the internal flask for helium are used. The helium temperature can be regulated in the 4.2 to 1.6 K range and the effects of reducing helium to the superfluid state at 2.17 K can be shown: boiling abruptly stops and superfluid flow appears. In order to show the electric and magnetic characteristics of superconductivity, a superconducting NbTi solenoid containing nonsuperconducting wire and germanium and superconducting Nb materials with different critical temperatures is placed in the helium refrigerant vessel. The fall of the resistance at the critical temperatures can be shown. In order to show magnetic field and superconductive current flow properties a shunt of superconductive material is connected in parallel to the coil and is enclosed in a teflon container with a heater which can vary its temperature. When it is heated and not superconductive, magnetic field effects can be demonstrated and when it is unheated and superconducting a continuous current can be demonstrated. |
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