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Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. |
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Title |
Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz |
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Journal Article |
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Year |
2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal  |
Physics of Vibrations |
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Volume |
9 |
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4 |
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242-245 |
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NbN HEB mixers |
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1069-1227 |
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1550 |
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Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. |
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Title |
Thermal properties of NbN single-photon detectors |
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Journal Article |
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Year |
2018 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
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Volume |
10 |
Issue |
6 |
Pages |
064063 (1 to 8) |
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Keywords |
NbN SSPD, SNSPD |
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Abstract |
We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices. |
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2331-7019 |
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1226 |
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Lobanov, Y. V.; Vakhtomin, Y. B.; Pentin, I. V.; Rosental, V. A.; Smirnov, K. V.; Goltsman, G. N.; Volkov, O. Y.; Dyuzhikov, I. N.; Galiev, R. R.; Ponomarev, D. S.; Khabibullin, R. A. |
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Title |
Time-resolved measurements of light–current characteristic and mode competition in pulsed THz quantum cascade laser |
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Journal Article |
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Year |
2021 |
Publication |
Optical Engineering |
Abbreviated Journal |
Optical Engineering |
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Volume |
60 |
Issue |
8 |
Pages |
1-8 |
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Keywords |
HEB, terahertz pulse generation, terahertz pulse detection, QCL, quantum cascade laser, superconducting hot electron bolometer |
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Abstract |
Quantum cascade lasers (QCL) are widely adopted as prominent and easy-to-use solid-state sources of terahertz radiation. Yet some applications require generation and detection of very sharp and narrow terahertz-range pulses with a specific spectral composition. We have studied time-resolved light-current (L–I) characteristics of multimode THz QCL operated with a fast ramp of the injection current. Detection of THz pulses was carried out using an NbN superconducting hot-electron bolometer with the time constant of the order of 1 ns while the laser bias current was swept during a single driving pulse. A nonmonotonic behavior of the L–I characteristic with several visually separated subpeaks was found. This behavior is associated with the mode competition in THz QCL cavity, which we confirm by L–I measurements with use of an external Fabry–Perot interferometer for a discrete mode selection. We also have demonstrated the possibility to control the L–I shape with suppression of one of the subpeaks by simply adjusting the off-axis parabolic mirror for optimal optical alignment for one of the laser modes. The developed technique paves the way for rapid characterization of pulsed THz QCLs for further studies of the possibilities of using this approach in remote sensing. |
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10.1117/1.Oe.60.8.082019 |
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1260 |
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Author |
Vorobyov, V. V.; Kazakov, A. Y.; Soshenko, V. V.; Korneev, A. A.; Shalaginov, M. Y.; Bolshedvorskii, S. V.; Sorokin, V. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Voronov, B. M.; Shalaev, V. M.; Akimov, A. V.; Goltsman, G. N. |
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Title |
Superconducting detector for visible and near-infrared quantum emitters [Invited] |
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Journal Article |
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Year |
2017 |
Publication |
Opt. Mater. Express |
Abbreviated Journal |
Opt. Mater. Express |
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Volume |
7 |
Issue |
2 |
Pages |
513-526 |
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Keywords |
SSPD, SNSPD |
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Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500–1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial. |
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2159-3930 |
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1234 |
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Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B. |
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Title |
Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion |
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Journal Article |
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Year |
2019 |
Publication |
Opt. Lett. |
Abbreviated Journal |
Opt. Lett. |
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Volume |
44 |
Issue |
5 |
Pages |
1198-1201 |
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Keywords |
HEB applications |
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We study parametric down-conversion (PDC) of optical laser radiation in the strongly frequency non-degenerate regime which is promising for the generation of quantum-correlated pairs of extremely different spectral ranges, the optical and the terahertz (THz) ones. The possibility to detect tenuous THz-frequency photon fluxes generated under low-gain spontaneous PDC is demonstrated using a hot electron bolometer. Then experimental dependences of the THz radiation power on the detection angle and on the pump intensity are analyzed. |
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0146-9592 |
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PMID:30821747 |
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1801 |
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Gol’tsman, G. N.; Smirnov, K. V. |
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Title |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
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Journal Article |
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Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
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Volume |
74 |
Issue |
9 |
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474-479 |
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Keywords |
2DEG, AlGaAs/GaAs heterostructures |
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Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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0021-3640 |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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1541 |
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Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
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Journal Article |
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2000 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
71 |
Issue |
1 |
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31-34 |
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Keywords |
2DEG, GaAs/AlGaAs heterostructures |
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The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
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0021-3640 |
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http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
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1559 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
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Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
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Journal Article |
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1996 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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64 |
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5 |
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404-409 |
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2DEG, AlGaAs/GaAs heterostructures |
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The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
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0021-3640 |
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http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
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1608 |
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Seleznev, V. A.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Zolotov, P. I.; Vasil'ev, D. D.; Moiseev, K. M.; Malevannaya, E. I.; Smirnov, K. V. |
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Title |
Superconducting detector of IR single-photons based on thin WSi films |
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Conference Article |
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Year |
2016 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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737 |
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012032 |
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WSi SSPD, SNSPD, NEP |
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We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP). |
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1742-6588 |
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1235 |
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Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Lubenchenko, A. V.; Morozov, P. V.; Shurkaeva, I. V.; Smirnov, K. V. |
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Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1124 |
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051030 |
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SSPD, SNSPD, VN |
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We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors. |
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1742-6588 |
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