Records |
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Meledin, D. V.; Marrone, D. P.; Tong, C.-Y. E.; Gibson, H.; Blundell, R.; Paine, S. N.; Papa, D.C.; Smith, M.; Hunter, T. R.; Battat, J.; Voronov, B.; Gol'tsman, G. |
Title |
A 1-THz superconducting hot-electron-bolometer receiver for astronomical observations |
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Journal Article |
Year |
2004 |
Publication |
IEEE Trans. Microwave Theory Techn. |
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IEEE Trans. Microwave Theory Techn. |
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52 |
Issue |
10 |
Pages |
2338-2343 |
Keywords |
NbN HEB mixer, applications |
Abstract |
In this paper, we describe a superconducting hot-electron-bolometer mixer receiver developed to operate in atmospheric windows between 800-1300 GHz. The receiver uses a waveguide mixer element made of 3-4-nm-thick NbN film deposited over crystalline quartz. This mixer yields double-sideband receiver noise temperatures of 1000 K at around 1.0 THz, and 1600 K at 1.26 THz, at an IF of 3.0 GHz. The receiver was successfully tested in the laboratory using a gas cell as a spectral line test source. It is now in use on the Smithsonian Astrophysical Observatory terahertz test telescope in northern Chile. |
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0018-9480 |
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1484 |
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Baksheeva, K.; Ozhegov, R.; Goltsman, G.; Kinev, N.; Koshelets, V.; Kochnev, A.; Betzalel, N.; Puzenko, A.; Ben Ishai, P.; Feldman, Y. |
Title |
The sub THz emission of the human body under physiological stress |
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Journal Article |
Year |
2021 |
Publication |
IEEE Trans. Terahertz Sci. Technol. |
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IEEE Trans. Terahertz Sci. Technol. |
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skin sub-THz emission, medicine |
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We present evidence that in the sub-THz frequency band, human skin can be considered as an electromagnetic bio-metamaterial, in that its natural emission is a product of skin tissue geometry and embedded structures. Radiometry was performed on 32 human subjects from 480 to 700 GHz. Concurrently, the subjects were exposed to stress, while heart pulse rate (PS) and galvanic skin response (GSR) were also measured. The results are substantially different from the expected black body radiation signal of the skin surface. PS and GSR correlate to the emissivity. Using a simulation model for the skin, we find that the sweat duct is a critical element. The simulated frequency spectra qualitatively match the measured emission spectra and show that our sub-THz emission is modulated by our level of mental stress. This opens avenues for the remote monitoring of the human state. |
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9380570 |
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1259 |
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Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. |
Title |
Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers |
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Journal Article |
Year |
2017 |
Publication |
IEEE Trans. Terahertz Sci. Technol. |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
IEEE Trans. Terahertz Sci. Technol. |
Volume |
7 |
Issue |
1 |
Pages |
53-59 |
Keywords |
NbN HEB mixer |
Abstract |
In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers. |
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2156-3446 |
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1330 |
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Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G. |
Title |
A microwave reflection readout scheme for hot electron bolometric direct detector |
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Journal Article |
Year |
2015 |
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IEEE Trans. THz Sci. Technol. |
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IEEE Trans. THz Sci. Technol. |
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5 |
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81-84 |
Keywords |
HEB detectors |
Abstract |
In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout
scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications. |
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RPLAB @ atomics90 @ |
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950 |
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Klapwijk, T. M.; Semenov, A. V. |
Title |
Engineering physics of superconducting hot-electron bolometer mixers |
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Journal Article |
Year |
2017 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
IEEE Trans. THz Sci. Technol. |
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7 |
Issue |
6 |
Pages |
627-648 |
Keywords |
HEB mixers |
Abstract |
Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments. |
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2156-342X |
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1292 |
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