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Author |
Gol’tsman, G. N.; Smirnov, K. V. |
Title |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
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Journal Article |
Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
Volume |
74 |
Issue |
9 |
Pages |
474-479 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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0021-3640 |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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1541 |
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Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
Type |
Journal Article |
Year |
2000 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
71 |
Issue |
1 |
Pages |
31-34 |
Keywords |
2DEG, GaAs/AlGaAs heterostructures |
Abstract |
The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
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0021-3640 |
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http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
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1559 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Title |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
Type |
Journal Article |
Year |
1996 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
64 |
Issue |
5 |
Pages |
404-409 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
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The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
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0021-3640 |
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http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
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1608 |
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Seleznev, V. A.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Zolotov, P. I.; Vasil'ev, D. D.; Moiseev, K. M.; Malevannaya, E. I.; Smirnov, K. V. |
Title |
Superconducting detector of IR single-photons based on thin WSi films |
Type |
Conference Article |
Year |
2016 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
737 |
Issue |
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Pages |
012032 |
Keywords |
WSi SSPD, SNSPD, NEP |
Abstract |
We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP). |
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1742-6588 |
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1235 |
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Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Lubenchenko, A. V.; Morozov, P. V.; Shurkaeva, I. V.; Smirnov, K. V. |
Title |
Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films |
Type |
Conference Article |
Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
1124 |
Issue |
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Pages |
051030 |
Keywords |
SSPD, SNSPD, VN |
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We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors. |
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Call Number |
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1228 |
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