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Author Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. url  doi
openurl 
  Title Generation of nanosecond terahertz pulses by the optical rectification method Type Journal Article
  Year 2012 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 96 Issue 2 Pages 94-97  
  Keywords optical rectification, lithium niobate crystal  
  Abstract The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1377  
Permanent link to this record
 
 
Author Gol’tsman, G. N.; Smirnov, K. V. url  doi
openurl 
  Title Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures Type Journal Article
  Year 2001 Publication Jetp Lett. Abbreviated Journal (up) Jetp Lett.  
  Volume 74 Issue 9 Pages 474-479  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Approved no  
  Call Number Serial 1541  
Permanent link to this record
 
 
Author Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Energy relaxation of two-dimensional electrons in the quantum Hall effect regime Type Journal Article
  Year 2000 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 71 Issue 1 Pages 31-34  
  Keywords 2DEG, GaAs/AlGaAs heterostructures  
  Abstract The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) Approved no  
  Call Number Serial 1559  
Permanent link to this record
 
 
Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. url  doi
openurl 
  Title Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K Type Journal Article
  Year 1996 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.  
  Volume 64 Issue 5 Pages 404-409  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) Approved no  
  Call Number Serial 1608  
Permanent link to this record
 
 
Author Verevkin, A.; Williams, C.; Gol’tsman, G. N.; Sobolewski, R.; Gilbert, G. url  doi
openurl 
  Title Single-photon superconducting detectors for practical high-speed quantum cryptography Type Miscellaneous
  Year 2001 Publication OFCC/ICQI Abbreviated Journal (up) OFCC/ICQI  
  Volume Issue Pages Pa3  
  Keywords NbN SSPD, SNSPD, QKD, quantum cryptography  
  Abstract We have developed an ultrafast superconducting single-photon detector with negligible dark counting rate. The detector is based on an ultrathin, submicron-wide NbN meander-type stripe and can detect individual photons in the visible to near-infrared wavelength range at a rate of at least 10 Gb/s. The above counting rate allows us to implement the NbN device to unconditionally secret quantum key distRochester, New Yorkribution in a practical, high-speed system using real-time Vernam enciphering.  
  Address Rochester, New York  
  Corporate Author Thesis  
  Publisher Optical Society of America Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Optical Fiber Communication Conference and International Conference on Quantum Information  
  Notes -- from poster session. Approved no  
  Call Number Serial 1544  
Permanent link to this record
 
 
Author Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gershenzon, E. M. url  doi
openurl 
  Title Electron-phonon interaction in thin YBaCuO films and fast detectors Type Conference Article
  Year 1993 Publication Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal (up) Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences  
  Volume 112 Issue Pages 184-185  
  Keywords YBCO HTS detectors  
  Abstract The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992  
  Notes Approved no  
  Call Number Serial 1662  
Permanent link to this record
 
 
Author Heusinger, M. A.; Nebosis,R. S.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. url  doi
openurl 
  Title Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa2Cu3O7-δ thin film Type Conference Article
  Year 1993 Publication Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal (up) Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences  
  Volume 112 Issue Pages 193-195  
  Keywords YBCO HTS detectors  
  Abstract We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992  
  Notes Approved no  
  Call Number Serial 1663  
Permanent link to this record
 
 
Author Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M. url  doi
openurl 
  Title Thermal boundary resistance at YBaCuO film-substrate interface Type Conference Article
  Year 1993 Publication Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal (up) Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences  
  Volume 112 Issue Pages 405-406  
  Keywords YBCO films  
  Abstract The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992  
  Notes Approved no  
  Call Number Serial 1665  
Permanent link to this record
 
 
Author Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. url  doi
openurl 
  Title Time delay of resistive-state formation in superconducting stripes excited by single optical photons Type Journal Article
  Year 2003 Publication Phys. Rev. B Abbreviated Journal (up) Phys. Rev. B  
  Volume 67 Issue 13 Pages 132508 (1 to 4)  
  Keywords NbN SSPD, SNSPD  
  Abstract We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1519  
Permanent link to this record
 
 
Author Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation Type Journal Article
  Year 1994 Publication Phys. Rev. B Condens. Matter. Abbreviated Journal (up) Phys. Rev. B Condens. Matter.  
  Volume 49 Issue 13 Pages 9091-9096  
  Keywords YBCO films  
  Abstract The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:10009690 Approved no  
  Call Number Serial 1648  
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