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Author Tretyakov, I. V.; Finkel, M. I.; Ryabchun, S. A.; Kardakova, A. I.; Seliverstov, S. V.; Petrenko, D. V.; Goltsman, G. N. url  doi
openurl 
  Title Hot-electron bolometer mixers with in situ contacts Type Journal Article
  Year 2014 Publication Radiophys. Quant. Electron. Abbreviated Journal (down) Radiophys. Quant. Electron.  
  Volume 56 Issue 8-9 Pages 591-598  
  Keywords HEB mixers  
  Abstract We report on the latest achievements in the development of superconducting hot-electron bolometer (HEB) mixers for terahertz superheterodyne receivers. We consider application ranges of such receivers and requirements for the basic characteristics of the mixers. Main features of the mixers, such as noise temperature, gain bandwidth, noise bandwidth, and required local-oscillator power, have been improved significantly over the past few years due to intense research work, both in terms of the element fabrication quality and in terms of understanding of the physics of the processes occurring in the HEB mixers. Contacts between the superconducting bridge and the planar antenna play a key role in the mixer operation. Improvement of the quality of the contacts leads simultaneously to a decrease in the noise temperature and an increase in the gain bandwidth of a mixer.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0033-8443 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1170  
Permanent link to this record
 

 
Author Ryabchun, S.; Tong, C.-yu E.; Blundell, R.; Kimberk, R.; Gol’tsman, G. url  doi
openurl 
  Title Effect of microwave radiation on the stability of terahertz hot-electron bolometer mixers Type Conference Article
  Year 2006 Publication Proc. SPIE Abbreviated Journal (down) Proc. SPIE  
  Volume 6373 Issue Pages 63730J (1 to 5)  
  Keywords NbN HEB mixers, hot-electron bolometer mixers, stability, Allan variance, LO power fluctuations  
  Abstract We report our studies of the effect of microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the NbN hot-electron bolometer (HEB) mixer incorporated into a THz heterodyne receiver. It is shown that exposing the HEB mixer to microwave radiation does not result in a significant rise of the receiver noise temperature and degradation of the mixer conversion gain so long as the level of microwave power is small compared to the local oscillator drive. Hence the injection of a small, but controlled amount of microwave radiation enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the stability of HEB mixer receivers.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Anwar, M.; DeMaria, A.J.; Shur, M.S.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Terahertz Physics, Devices, and Systems  
  Notes Approved no  
  Call Number Serial 1441  
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Author Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. url  openurl
  Title Superconducting single photon detector integrated with optical cavity Type Conference Article
  Year 2011 Publication Proc. MLPLIT Abbreviated Journal (down) Proc. MLPLIT  
  Volume Issue Pages 143-145  
  Keywords NbN SSPD, cavity  
  Abstract  
  Address Suzdal / Vladimir (Russia)  
  Corporate Author Thesis  
  Publisher Modern laser physics and laser-information technologies for science and manufacture Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference 1st international russian-chinese conference / youthschool-workshop  
  Notes September 23-28, 2011 Approved no  
  Call Number Serial 1385  
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Author Maslennikova, A.; Larionov, P.; Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. url  openurl
  Title Noise equivalent power and dynamic range of NBN hot-electron bolometers Type Conference Article
  Year 2011 Publication Proc. MLPLIT Abbreviated Journal (down) Proc. MLPLIT  
  Volume Issue Pages 146-148  
  Keywords NbN HEB  
  Abstract  
  Address Suzdal / Vladimir (Russia)  
  Corporate Author Thesis  
  Publisher Modern laser physics and laser-information technologies for science and manufacture Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference 1st international russian-chinese conference / youthschool-workshop  
  Notes September 23-28, 2011 Approved no  
  Call Number Serial 1386  
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  isbn
openurl 
  Title Silicon room temperature IR detectors coated with Ag2S quantum dots Type Conference Article
  Year 2019 Publication Proc. IWQO Abbreviated Journal (down) Proc. IWQO  
  Volume Issue Pages 369-371  
  Keywords silicon detector, quantum dot, IR, surface states  
  Abstract For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN 978-5-89513-451-1 Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1154  
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