|
|
Li, C. - T., Chen, T. - J., Ni, T. - L., Lu, W. - C., Chiu, C. - P., Chen, C. - W., et al. (2009). Development of SIS mixers for SMA 400-520 GHz band. In Proc. 20th Int. Symp. Space Terahertz Technol. (pp. 24–30).
Abstract: SIS junction mixers were developed for SMA 400-520 GHz band. The results show receiver noise temperature around 100 K across the band, with noise contribution from RF loss and IF estimated to be around 50 K and 20K, respectively. Two schemes were used to tune out junction's parasitic capacitance. When a parallel inductor is employed, the input impedance is close to Rn, which facilitates impedance matching between the junction and the waveguide probe. Waveguide probes were designed to achieve a low feed-point impedance to match to the junction resistance. Optimum embedding impedances for lower receiver noise temperature were investigated. Performances of two schemes and composition of receiver noise were also discussed.
|
|
|
|
Jackson, B. D., Hesper, R., Adema, J., Barkhof, J., Baryshev, A. M., Zijlstra, T., et al. (2009). Series production of state-of-the-art 602-720 GHz SIS receivers for band 9 of ALMA. In Proc. 20th Int. Symp. Space Terahertz Technol. (pp. 7–11).
Abstract: The Atacama Large Millimeter/Sub-millimeter Array (ALMA) requires the development and production of 73 state-of-the-art receivers for the 602-720 GHz range – the ALMA Band 9 cartridges. Development and pre-production of the first 8 cartridges was completed between 2003 and 2008, resulting in a cartridge design that meets the project's challenging requirements. The cartridge design remains essentially unchanged for production, while the production and test processes developed during pre-production have been fine-tuned to address the biggest new challenge for this phase – ramping up production to a rate of 2 cartridges per month over 2009-2012.
|
|
|
|
Ovchinnikov, Y. N., & Varlamov, A. A. (2009). Fluctuation-dissipative phenomena in a narrow superconducting channel carrying current below critical. arXiv, 0910.2659v1, 1–4.
Abstract: The theory of current transport in a narrow superconducting channel accounting for thermal fluctuations is developed. These fluctuations result in the appearance of small but finite dissipation in the sample. The value of corresponding voltage is found as the function of temperature (close to transition temperature) and arbitrary bias current. It is demonstrated that the value of the activation energy (exponential factor in the Arrenius law) when current approaches to the critical one is proportional to (1-J/Jc)^(5/4). This result is in concordance with the one for the affine phenomenon of the Josephson current decay due to the thermal phase fluctuations, where the activation energy proportional (1-J/J_c)^(3/2)(the difference in the exponents is related to the additional current dependence of the order parameter). Found dependence of the activation energy on current explains the enormous discrepancy between the theoretically predicted before and the experimentally observed broadening of the resistive transition.
|
|
|
|
Larrey, V., Villegier, J. - C., Salez, M., Miletto-Granozio, F., & Karpov, A. (1999). Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ. IEEE Trans. Appl. Supercond., 9(2), 3216–3219.
Abstract: A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches).
|
|
|
|
Samsonova, A., Zolotov, P., Baeva, E., Lomakin, A., Titova, N., Kardakova, A., et al. (2021). Signatures of surface magnetic disorder in thin niobium films. IEEE Trans. Appl. Supercond., , 1.
Abstract: We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder (kFl 150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm-2, which is in agreement with the previously reported data for Nb films.
|
|
