| Records |
| Author |
Karasik, B. S.; Gol'tsman, G. N.; Voronov, B. M.; Svechnikov, S. I.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Yngvesson, K. S. |
| Title |
Hot electron quasioptical NbN superconducting mixer |
Type |
Journal Article |
| Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal  |
IEEE Trans. Appl. Supercond. |
| Volume |
5 |
Issue |
2 |
Pages |
2232-2235 |
| Keywords |
NbN HEB mixers |
| Abstract |
Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform. |
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1051-8223 |
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1622 |
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Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Papa, D. C.; Hunter, T. R.; Paine, S. N.; Patt, F.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E. |
| Title |
Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation |
Type |
Journal Article |
| Year |
2000 |
Publication |
IEEE Trans. Microw. Theory Techn. |
Abbreviated Journal |
IEEE Trans. Microw. Theory Techn. |
| Volume |
48 |
Issue |
4 |
Pages |
683-689 |
| Keywords |
NbN HEB mixers, LO power, local oscillator power, saturation, linearity, dynamic range |
| Abstract |
In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO≈1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season. |
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0018-9480 |
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RPLAB @ lobanovyury @ |
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573 |
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Jiang, Ling; Miao, Wei; Zhang, Wen; Li, Ning; Lin, Zhen Hui; Yao, Qi Jun; Shi, Sheng-Cai; Svechnikov, S. I.; Vakhtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. |
| Title |
Characterization of a quasi-optical NbN superconducting HEB mixer |
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Journal Article |
| Year |
2006 |
Publication |
IEEE Trans. Microwave Theory Techn. |
Abbreviated Journal |
IEEE Trans. Microwave Theory Techn. |
| Volume |
54 |
Issue |
7 |
Pages |
2944-2948 |
| Keywords |
NbN HEB mixers |
| Abstract |
In this paper, the performance of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer, cryogenically cooled by a close-cycled 4-K refrigerator, is thoroughly investigated at 300, 500, and 850 GHz. The lowest receiver noise temperatures measured at the respective three frequencies are 1400, 900, and 1350 K, which can go down to 659, 413, and 529 K, respectively, after correcting the loss and associated noise contribution of the quasi-optical system before the measured superconducting HEB mixer. The stability of the quasi-optical superconducting HEB mixer is also investigated here. The Allan variance time measured with a local oscillator pumping at 500 GHz and an IF bandwidth of 110 MHz is 1.5 s at the dc-bias voltage exhibiting the lowest noise temperature and increases to 2.5 s at a dc bias twice that voltage. |
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0018-9480 |
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1448 |
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Meledin, D. V.; Marrone, D. P.; Tong, C.-Y. E.; Gibson, H.; Blundell, R.; Paine, S. N.; Papa, D.C.; Smith, M.; Hunter, T. R.; Battat, J.; Voronov, B.; Gol'tsman, G. |
| Title |
A 1-THz superconducting hot-electron-bolometer receiver for astronomical observations |
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Journal Article |
| Year |
2004 |
Publication |
IEEE Trans. Microwave Theory Techn. |
Abbreviated Journal |
IEEE Trans. Microwave Theory Techn. |
| Volume |
52 |
Issue |
10 |
Pages |
2338-2343 |
| Keywords |
NbN HEB mixer, applications |
| Abstract |
In this paper, we describe a superconducting hot-electron-bolometer mixer receiver developed to operate in atmospheric windows between 800-1300 GHz. The receiver uses a waveguide mixer element made of 3-4-nm-thick NbN film deposited over crystalline quartz. This mixer yields double-sideband receiver noise temperatures of 1000 K at around 1.0 THz, and 1600 K at 1.26 THz, at an IF of 3.0 GHz. The receiver was successfully tested in the laboratory using a gas cell as a spectral line test source. It is now in use on the Smithsonian Astrophysical Observatory terahertz test telescope in northern Chile. |
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0018-9480 |
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1484 |
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Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. |
| Title |
Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers |
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Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. Terahertz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. Terahertz Sci. Technol. |
| Volume |
7 |
Issue |
1 |
Pages |
53-59 |
| Keywords |
NbN HEB mixer |
| Abstract |
In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers. |
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2156-3446 |
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1330 |
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