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Kawamura, J. H.; Tong, C.-Y.E.; Blundell, R.; Cosmo Papa, D.; Hunter, T. R.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
An 800 GHz NbN phonon-cooled hot-electron bolometer mixer receiver |
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Journal Article |
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Year |
1999 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3753-3756 |
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NbN HEB mixers |
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We describe a heterodyne receiver developed for astronomical applications to operate in the 350 /spl mu/m atmospheric window. The waveguide receiver employs a superconductive NbN phonon-cooled hot-electron bolometer mixer. The double sideband receiver noise temperature closely follows 1 kGHz/sup -1/ across 780-870 GHz, with the intermediate frequency centered at 1.4 GHz. The conversion loss is about 15 dB. The receiver was installed for operation at the University of Arizona/Max Planck Institute for Radio Astronomy Submillimeter Telescope facility. The instrument was successfully used to conduct test observations of a number of celestial sources in a number of astronomically important spectral lines. |
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1051-8223 |
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288 |
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Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer |
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Journal Article |
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2003 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
IEEE Trans. Appl. Supercond. |
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13 |
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2 |
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164-167 |
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NbN HEB mixer |
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In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions. |
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341 |
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Schwaab, G.W.; Sirmain, G.; Schubert, J.; Hubers, H.-W.; Gol'tsman, G.; Cherednichenko, S.; Verevkin, A.; Voronov, B.; Gershenzon, E. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Investigation of NbN phonon-cooled HEB mixers at 2.5 THz |
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Journal Article |
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1999 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
IEEE Trans. Appl. Supercond. |
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9 |
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2 |
Pages |
4233-4236 |
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NbN HEB mixers |
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The development of superconducting hot electron bolometric (HEB) mixers has been a big step forward in the direction of quantum noise limited mixer performance at THz frequencies. Such mixers are crucial for the upcoming generation of airborne and spaceborne THz heterodyne receivers. In this paper we report on new results on a phonon-cooled NbN HEB mixer using e-beam lithography. The superconducting film is 3 nm thick. The mixer is 0.2 μm long and 1.5 μm wide and it is integrated in a spiral antenna on a Si substrate. The device is quasi-optically coupled through a Si lens and a dielectric beam combiner to the radiation of an optically pumped FIR ring gas laser cavity. The performance of the mixer at different THz frequencies from 0.69 to 2.55 THz with an emphasis on 2.52 THz is demonstrated. At 2.52 THz minimum DSB noise temperatures of 4200 K have been achieved at an IF of 1.5 GHz and a bandwidth of 40 MHz with the mixer mounted in a cryostat and a 0.8 m long signal path in air. |
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1051-8223 |
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550 |
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Ryabchun, Sergey; Tong, Cheuk-Yu Edward; Blundell, Raymond; Gol'tsman, Gregory |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Stabilization scheme for hot-electron bolometer receivers using microwave radiation |
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Journal Article |
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2009 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
IEEE Trans. Appl. Supercond. |
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Volume |
19 |
Issue |
1 |
Pages |
14-19 |
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Keywords |
HEB, mixer, Allan variance, stabilization, radiometer equation |
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We present the results of a stabilization scheme for terahertz receivers based on NbN hot-electron bolometer (HEB) mixers that uses microwave radiation with a frequency much lower than the gap frequency of NbN to compensate for mixer current fluctuations. A feedback control loop, which actively controls the power level of the injected microwave radiation, has successfully been implemented to stabilize the operating point of the HEB mixer. This allows us to increase the receiver Allan time to 10 s and also improve the temperature resolution of the receiver by about 30% in the total power mode of operation. |
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1051-8223 |
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RPLAB @ lobanovyury @ |
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559 |
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Ryabchun, Sergey; Tong, Cheuk-Yu Edward; Paine, Scott; Lobanov, Yury; Blundell, Raymond; Goltsman, Gregory |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Temperature resolution of an HEB receiver at 810 GHz |
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Journal Article |
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2009 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
IEEE Trans. Appl. Supercond. |
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Volume |
19 |
Issue |
3 |
Pages |
293-296 |
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Keywords |
HEB mixer |
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We present the results of direct measurements of the temperature resolution of an HEB receiver operating at 810 GHz, in both continuum and spectroscopic modes. In the continuum mode, the input of the receiver was switched between black bodies with different physical temperatures. With a system noise temperature of around 1100 K, the receiver was able to resolve loads which differed in temperature by about 1 K over an integration time of 5 seconds. This resolution is significantly worse than the value of 0.07 K given by the radiometer equation. In the spectroscopic mode, a gas cell filled with carbonyl sulphide (OCS) gas was used and the emission line at 813.3537060 GHz was measured using the receiver in conjunction with a digital spectrometer. From the observed spectra, we determined that the measurement uncertainty of the equivalent emission temperature was 2.8 K for an integration time of 0.25 seconds and a spectral resolution of 12 MHz, compared to a 1.4 K temperature resolution given by the radiometer equation. This relative improvement is due to the fact that at short integration times the contribution from 1/f noise and drift are less dominant. In both modes, the temperature resolution was improved by about 40% with the use of a feedback loop which adjusted the level of an injected microwave radiation to maintain a constant operating current of the HEB mixer. This stabilization scheme has proved to be very effective to keep the temperature resolution of the HEB receiver to close to the theoretical value given by the radiometer equation. |
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636 |
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Lobanov, Y.V.; Tong, C.-Y.E.; Hedden, A.S.; Blundell, R.; Voronov, B.M.; Gol'tsman, G.N. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Direct measurement of the gain and noise bandwidths of HEB mixers |
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Journal Article |
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2011 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
IEEE Trans. Appl. Supercond. |
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Volume |
21 |
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3 |
Pages |
645-648 |
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waveguide NbN HEB mixers |
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The intermediate frequency (IF) bandwidth of a hot electron bolometer (HEB) mixer is an important parameter of the mixer, in that it helps to determine its suitability for a given application. With the availability of wideband low noise amplifiers, it is simple to measure the performance of an HEB mixer over a wide range of IF at a fixed LO frequency using the standard Y-factor method. This in-situ method allows us to measure both the gain and noise bandwidths simultaneously. We have also measured mixer output impedance with a vector network analyser. Intrinsic time constant has been extracted from the impedance data and compared to the mixer's bandwidths determined from receiver Y-factor measurement. |
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RPLAB @ gujma @ |
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720 |
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Trifonov, A.; Tong, C.-Y. E.; Blundell, R.; Ryabchun, S.; Gol'tsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Probing the stability of HEB mixers with microwave injection |
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Journal Article |
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2015 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
IEEE Trans. Appl. Supercond. |
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Volume |
25 |
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3 |
Pages |
2300404 (1 to 4) |
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Keywords |
NbN HEB mixer, stability, Allan-variance |
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Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%. |
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1355 |
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Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver |
Type |
Conference Article |
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Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
IEEE Trans. Appl. Supercond. |
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Volume |
27 |
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4 |
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6 |
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Multi-pixel, HEB, silicon-on-insulator, horn array |
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We report on the development of a multi-pixel
Hot Electron Bolometer (HEB) receiver fabricated using
silicon membrane technology. The receiver comprises a
2 × 2 array of four HEB mixers, fabricated on a single
chip. The HEB mixer chip is based on a superconducting
NbN thin film deposited on top of the silicon-on-insulator
(SOI) substrate. The thicknesses of the device layer and
handling layer of the SOI substrate are 20 μm and 300 μm
respectively. The thickness of the device layer is chosen
such that it corresponds to a quarter-wave in silicon at
1.35 THz. The HEB mixer is integrated with a bow-tie
antenna structure, in turn designed for coupling to a
circular waveguide, |
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RPLAB @ kovalyuk @ |
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1111 |
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Author |
Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Development of a silicon membrane-based multipixel hot electron bolometer receiver |
Type |
Journal Article |
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Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
IEEE Trans. Appl. Supercond. |
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Volume |
27 |
Issue |
4 |
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1-5 |
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Multi-pixel, NbN HEB, silicon-on-insulator, horn array |
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We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. |
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1051-8223 |
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1324 |
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Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Photon absorption near the gap frequency in a hot electron bolometer |
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Journal Article |
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2017 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal ![sorted by Abbreviated Journal field, ascending order (up)](img/sort_asc.gif) |
IEEE Trans. Appl. Supercond. |
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27 |
Issue |
4 |
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1-4 |
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NBN HEB mixer |
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The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap. |
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1558-2515 |
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1331 |
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