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Sidorova, M.; Semenov, A.; Korneev, A.; Chulkova, G.; Korneeva, Y.; Mikhailov, M.; Devizenko, A.; Kozorezov, A.; Goltsman, G. |
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Electron-phonon relaxation time in ultrathin tungsten silicon film |
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2018 |
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arXiv |
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WSi film |
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Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K. |
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Duplicated as 1341 |
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1340 |
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Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneev, A. A.; Chulkova, G. M.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Goltsman, G. N. |
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Title |
Non-bolometric bottleneck in electron-phonon relaxation in ultra-thin WSi film |
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Miscellaneous |
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2018 |
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arXiv |
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WSi films, diffusion constant, SSPD, SNSPD |
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We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau{e-ph} = 140-190 ps at TC = 3.4 K, supporting the results of earlier measurements by independent techniques. |
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Duplicated as 1305 |
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1341 |
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Murphy, A.; Semenov, A.; Korneev, A.; Korneeva, Y.; Gol’tsman, G.; Bezryadin, A. |
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Dark counts initiated by macroscopic quantum tunneling in NbN superconducting photon detectors |
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2014 |
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arXiv |
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NbN SSPD |
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We perform measurements of the switching current distributions of three w = 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijarvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors. |
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murphy2014dark |
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1356 |
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Смирнов, Константин Владимирович |
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Создание приборов на сверхпроводниковых счетчиках фотонов и методов диагностики КМОП микросхем, гетероструктур и лазеров на квантовых точках |
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2009 |
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NbN SSPD |
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Этап №1 (дата окончания: 30.09.2009)
Разработана методика изготовления сверхпроводниковых однофотонных детекторов (SSPD) с монокристаллической структурой пленки сверхмалой толщины. Изготовлены экспериментальные образцы сверхпроводниковых однофотонных детекторов (SSPD). Разработана методика пакетирования сверхпроводникового однофотонного детектора в оптический узел с одномодовым оптоволокном. Изготовлены экспериментальные образцы приемных модулей на основе однофотонных сверхпроводниковых детекторов из NbN-нанопленок.
Этап №2 (дата окончания: 28.10.2009)
Разработаны методы диагностики КМОП микросхем, гетероструктур и лазеров на квантовых точках и методика измерения мощности излучения полупроводниковых лазеров на квантовых точках с использованием сверхпроводниковых однофотонных детекторов (SSPD). Проведена технико-экономическая оценка рыночного потенциала полученных результатов. |
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Министерство образования и науки РФ |
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Отчет о НИР/НИОКР; Министерство образования и науки РФ; Номер гранта (контракта): 02.513.11.3446; Дата гранта (контракта): 03.06.2009 |
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1828 |
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Cherednichenko, S.; Drakinskiy, V.; Lecomte, B.; Dauplay, F.; Krieg, J.-M.; Delorme, Y.; Feret, A.; Hübers, H.-W.; Semenov, A.D.; Gol’tsman, G.N. |
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Terahertz heterodyne array based on NbN HEB mixers |
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2008 |
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Proc. 19th Int. Symp. Space Terahertz Technol. |
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43 |
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NbN HEB mixers array |
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A 16 pixel heterodyne receiver for 2.5 THz is been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4 / SiO2 membranes. Miniature mirrors (one per pixel) and back short for the antenna were used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4 / SiO 2 membranes was found to be about 3 GHz, when an MgO buffer layers is applied on the membrane. We will also present the progress in the camera heterodyne tests. |
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1411 |
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Вахтомин, Ю. Б.; Антипов, С. В.; Масленников, С. Н.; Смирнов, К. В.; Поляков, С. Л.; Чжан, В.; Свечников, С. И.; Каурова, Н. С.; Гришина, Е. В.; Воронов, Б. М.; Гольцман, Г. Н. |
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Квазиоптические смесители терагерцового диапазона на основе эффекта разогрева электронов в тонких пленках NbN |
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Conference Article |
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2006 |
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Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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2 |
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688-689 |
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NbN HEB mixers |
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Представлены результаты измерения рактеристик смесителей на эффекте разогрева электронов в тонких сверхпроводниковых пленках NbN. Смесители были изготовлены на основе пленок NbN толщиной 2-3.5 нм осажденных на кремниевую подложку с буферным подсло- ем MgO. Смесительный элемент согласовывался с планар- ной логопериодической спиральной антенной. Лучшее зна- чение шумовой температуры приемника на основе NbN смесителя составило 1300 К и 3100 К на частотах гетеро- дина 2.5 TГц и 3.8 ТГц, соответственно. Максимальное зна- чение полосы преобразования, измеренной на частоте 900 |Ц, достигло значения 5.2 ГГц для смесителя изготовлен- ного из NbN пленки толщиной 2 нм. Оптимальная мощность Представлены результаты измерения ха- гетеродинного источника составила 1-3 мкВт для смесите- лей с различным объемом смесительного элемента. |
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Słysz, W.; Węgrzecki, M.; Bar, J.; Grabiec, P.; Gol'tsman, G. N.; Verevkin, A.; Sobolewski, R. |
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NbN superconducting single-photon detector coupled with a communication fiber |
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2005 |
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Elektronika : konstrukcje, technologie, zastosowania |
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46 |
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6 |
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51-52 |
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NbN SSPD, SNSPD |
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We present novel superconducting single-photon detectors (SSPDs), based on ultrathin NbN films, designed for fiber-based quantum communications (lambda = 1.3 žm and 1.55 žm). For fiber-based operation, our SSPDs contain a special micromechanical construction integrated with the NbN structure, which enables efficient and mechanically very stabile fiber coupling. The detectors combine GHz counting rate, high quantum efficiency and very low level of dark counts. At 1.3 – 1.55 žm wavelength range our detector exhibits a quantum efficiency up to 10%. |
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Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R. |
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Nano-structured superconducting single-photon detectors |
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2004 |
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
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520 |
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1-3 |
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527-529 |
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NbN SSPD, SNSPD |
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NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications. |
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0168-9002 |
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Il'in, K.; Siegel, M.; Semenov, A.; Engel, A.; Hübers, H.-W.; Hollmann, E.; Gol'tsman, G.; Voronov, B. |
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Thickness dependence of superconducting properties of ultrathin Nb and NbN films |
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2004 |
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AKF-Frühjahrstagung |
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Nb, NbN films, has potential plagiarism |
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Berlin-Adlershof |
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Gol’tsman, G.N. |
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Overview of recent results for superconducting NbN terahertz and optical detectors and mixers |
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2014 |
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SM2 – Seminar on Terahertz Photonics |
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0562 |
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NbN SSPD, SNSPD, HEB |
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We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. |
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