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Author |
Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. |
Title |
Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ |
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Journal Article |
Year |
1986 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Физика и техника полупроводников |
Volume |
20 |
Issue |
1 |
Pages |
99-103 |
Keywords |
n-Ge, Hubbard upper zone conductivity, negative magnetoresistance |
Abstract |
В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. |
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1759 |
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Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. |
Title |
Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда |
Type |
Journal Article |
Year |
1983 |
Publication |
Физика и техника полупроводников |
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Физика и техника полупроводников |
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17 |
Issue |
10 |
Pages |
1873-1876 |
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compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance |
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1763 |
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Ozhegov, R. V.; Gorshkov, K. N.; Gol'tsman, G. N.; Kinev, N. V.; Koshelets, V. P. |
Title |
The stability of a terahertz receiver based on a superconducting integrated receiver |
Type |
Journal Article |
Year |
2011 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Supercond. Sci. Technol. |
Volume |
24 |
Issue |
3 |
Pages |
035003 |
Keywords |
SIS mixer, SIR, stability |
Abstract |
We present the results of stability testing of a terahertz radiometer based on a superconducting receiver with a SIS tunnel junction as the mixer and a flux-flow oscillator as the local oscillator. In the continuum mode, the receiver with a noise temperature of 95 K at 510 GHz measured over the intermediate frequency (IF) passband of 4-8 GHz offered a noise equivalent temperature difference of 10 ± 1 mK at an integration time of 1 s. We offer a method to significantly increase the integration time without the use of complex measurement equipment. The receiver observed a strong signal over a final detection bandwidth of 4 GHz and offered an Allan time of 5 s. |
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RPLAB @ gujma @ |
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705 |
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Kooi, Jacob Willem |
Title |
Advanced receivers for submillimeter and far infrared astronomy |
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Book Whole |
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2008 |
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University of Groningen |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
RUG |
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HEB, SIS, TES, NEP, noise temperature, IF bandwidth, waveguide, impedance, conversion gain, FTS, integrated array, stability, Allan variance, multi-layer antireflection coating |
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Doctoral thesis |
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978-90-367-3653-4 |
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881 |
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Ozhegov, R. V.; Gorshkov, K. N.; Vachtomin, Y. B.; Smirnov, K. V.; Finkel, M. I.; Goltsman, G. N.; Kiselev, O. S.; Kinev, N. V.; Filippenko, L. V.; Koshelets, V. P. |
Title |
Terahertz imaging system based on superconducting heterodyne integrated receiver |
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Conference Article |
Year |
2014 |
Publication |
Proc. THz and Security Applications |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Proc. THz and Security Applications |
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113-125 |
Keywords |
SIS mixer, SIR, THz imaging |
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The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compared to traditional systems.
In this project we propose a prototype THz imaging system using an 1 pixel SIR and 2D scanner. At a local oscillator frequency of 500 GHz the best noise equivalent temperature difference (NETD) of the SIR is 10 mK at an integration time of 1 s and a detection bandwidth of 4 GHz. The scanner consists of two rotating flat mirrors placed in front of the antenna consisting of a spherical primary reflector and an aspherical secondary reflector. The diameter of the primary reflector is 0.3 m. The operating frequency of the imaging system is 600 GHz, the frame rate is 0.1 FPS, the scanning area is 0.5 × 0.5 m2, the image resolution is 50 × 50 pixels, the distance from an object to the scanner was 3 m. We have obtained THz images with a spatial resolution of 8 mm and a NETD of less than 2 K. |
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Springer Netherlands |
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Dordrecht |
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Corsi, C.; Sizov, F. |
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978-94-017-8828-1 |
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1368 |
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Ozhegov, R. V.; Gorshkov, K. N.; Smirnov, K. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. |
Title |
Terahertz imaging system based on superconducting integrated receiver |
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Conference Article |
Year |
2010 |
Publication |
Proc. 2-nd Int. Conf. Terahertz and Microwave radiation: Generation, Detection and Applications |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Proc. 2-nd Int. Conf. Terahertz and Microwave radiation: Generation, Detection and Applications |
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20-22 |
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SIS mixer, SIR |
Abstract |
The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Developing an array of SIRs would allow obtaining amplitude and phase characteristics of incident radiation in the plane of the receiver. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compare to traditional systems: i) high temperature resolution, comparable to the best results for incoherent receivers; ii) high spectral resolution allowing spectral analysis of various substances; iii) the local oscillator frequency can be varied to obtain images at different frequencies, effectively providing “color” images; iv) since a heterodyne receiver preserves the phase of the radiation, it is possible to construct 3D images. The paper presents a prototype THz imaging system using an 1 pixel SIR. We have studied the dependence of the noise equivalent temperature difference (NETD) on the integration time and also possible ways of achieving best possible sensitivity. An NETD of 13 mK was obtained with an integration time of 1 sec a detection bandwidth of 4 GHz at a local oscillator frequency of 520 GHz. An important advantage of an FFO is its wide operation range: 300-700 GHz. |
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ozhegov2010terahertz |
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1397 |
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Shein, K. V.; Zarudneva, A. A.; Emel’yanova, V. O.; Logunova, M. A.; Chichkov, V. I.; Sobolev, A.S.; Zav’yalov, V. V.; Lehtinen, J. S.; Smirnov, E. O.; Korneeva, Y. P.; Korneev, A. A.; Arutyunov, K. Y. |
Title |
Superconducting microstructures with high impedance |
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Journal Article |
Year |
2020 |
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Phys. Solid State |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Phys. Solid State |
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62 |
Issue |
9 |
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1539-1542 |
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superconducting channels, SIS, inetic inductance, tunneling contacts, high impedance |
Abstract |
The transport properties of two types of quasi-one-dimensional superconducting microstructures were investigated at ultra-low temperatures: the narrow channels close-packed in the shape of meander, and the chains of tunneling contacts “superconductor-insulator-superconductor.” Both types of the microstructures demonstrated high value of high-frequency impedance and-or the dynamic resistance. The study opens up potential for using of such structures as current stabilizing elements with zero dissipation. |
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1063-7834 |
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1789 |
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Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. |
Title |
Electron heating in metallic resistors at sub-Kelvin temperature |
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Journal Article |
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2007 |
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Phys. Rev. B |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Phys. Rev. B |
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76 |
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165426(1-9) |
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electron heating in resistor, HEB distributed model, HEB model, hot electrons |
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In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments. |
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Recommended by Klapwijk as example for writing the article on the HEB model. |
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Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
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Relaxation of the resistive superconducting state in boron-doped diamond films |
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Journal Article |
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2016 |
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Phys. Rev. B |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Phys. Rev. B |
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93 |
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6 |
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064506 |
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boron-doped diamond films, resistive superconducting state, relaxation time |
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We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. |
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1167 |
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Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
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Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
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Journal Article |
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1997 |
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Phys. Rev. B |
Abbreviated Journal ![sorted by Abbreviated Journal field, descending order (down)](img/sort_desc.gif) |
Phys. Rev. B |
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56 |
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16 |
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10089-10096 |
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disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity |
Abstract |
The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
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