|
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
7 |
1248-1250 |
|
|
Kooi, Jacob Willem |
Advanced receivers for submillimeter and far infrared astronomy |
2008 |
University of Groningen |
|
|
|
|
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
2019 |
Proc. IWQO |
|
369-371 |
|
|
Bell, Matthew; Sergeev, Andrei; Goltsman, Gregory; Bird, Jonathan; Verevkin, Aleksandr |
Transition-edge sensors based on superconducting nanowires |
2006 |
Proc. APS March Meeting |
|
B38.00001 |
|
|
Titova, N; Kardakova, A.; Tovpeko, N; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S.R.; Williams, O. A.; Goltsman, G. N. |
Superconducting diamond films as perspective material for direct THz detectors |
2017 |
Proc. 28th Int. Symp. Space Terahertz Technol. |
|
82 |
|