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Author Maslennikov, S. N.; Finkel, M. I.; Antipov, S. V.; Polyakov, S. L.; Zhang, W.; Ozhegov, R.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Korotetskaya, Yu. P.; Kaurova, N. S.; Gol'tsman, G. N.; Voronov, B. M.
Title Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz Type Conference Article
Year 2006 Publication Proc. 17th Int. Symp. Space Terahertz Technol. Abbreviated Journal (down) Proc. 17th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 177-179
Keywords directly coupled NbN HEB mixers
Abstract We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz.
Address
Corporate Author Thesis
Publisher Place of Publication Paris, France Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 386
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Author Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Yu. P.; Kaurova, N. S.; Voronov, B. M.; Gol'tsman, G. N.
Title Hot electron bolometer mixer for 20 – 40 THz frequency range Type Conference Article
Year 2005 Publication Proc. 16th Int. Symp. Space Terahertz Technol. Abbreviated Journal (down) Proc. 16th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 393-397
Keywords IR NbN HEB mixers
Abstract The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator.
Address
Corporate Author Thesis
Publisher Place of Publication Göteborg, Sweden Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 369
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Author Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N.
Title Superconducting hot electron bolometer mixer for middle IR range Type Conference Article
Year 2006 Publication Proc. 16th Int. Crimean Microwave and Telecommunication Technology Abbreviated Journal (down) Proc. 16th Int. Crimean Microwave and Telecommunication Technology
Volume 2 Issue Pages 686-687
Keywords IR NbN HEB mixer, detector, GaAs substrate
Abstract The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number 4023440 Serial 1297
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Author Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M.
Title Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz Type Journal Article
Year 2001 Publication Physics of Vibrations Abbreviated Journal (down) Physics of Vibrations
Volume 9 Issue 4 Pages 242-245
Keywords NbN HEB mixers
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1069-1227 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1550
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Author Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V.
Title Generation of nanosecond terahertz pulses by the optical rectification method Type Journal Article
Year 2012 Publication JETP Lett. Abbreviated Journal (down) JETP Lett.
Volume 96 Issue 2 Pages 94-97
Keywords optical rectification, lithium niobate crystal
Abstract The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-3640 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1377
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Author Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N.
Title The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer Type Journal Article
Year 2003 Publication J. of communications technol. & electronics Abbreviated Journal (down) J. of communications technol. & electronics
Volume 48 Issue 6 Pages 671-675
Keywords NbN HEB mixers
Abstract Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
Address
Corporate Author Thesis
Publisher MAIK Nauka/Interperiodica, Birmingham, AL Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1064-2269 ISBN Medium
Area Expedition Conference
Notes https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) Approved no
Call Number Vakhtomin2003 Serial 1522
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Author Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G.
Title Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation Type Journal Article
Year 2015 Publication J. Appl. Phys. Abbreviated Journal (down) J. Appl. Phys.
Volume 118 Issue 19 Pages 194303
Keywords terahertz detectors, asymmetric carbon nanotubes, CNT
Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1169
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Author Shurakov, A.; Seliverstov, S.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.
Title Input bandwidth of hot electron bolometer with spiral antenna Type Journal Article
Year 2012 Publication IEEE Trans. THz Sci. Technol. Abbreviated Journal (down) IEEE Trans. THz Sci. Technol.
Volume 2 Issue 4 Pages 400-405
Keywords NbN HEB bolometers bandwidth, log-spiral antenna
Abstract We report the results of our study of the input bandwidth of hot electron bolometers (HEB) embedded into the planar log-spiral antenna. The sensitive element is made of the ultrathin superconducting NbN film patterned as a bridge at the feed of the antenna. The contacts between the antenna and a sensitive element are made from in situ deposited gold (i.e., deposited over NbN film without breaking vacuum), which gives high quality contacts and makes the response of the HEB at higher frequencies less affected by the RF loss. An accurate experimental spectroscopic procedure is demonstrated that leads to the confirmation of the wide ( 8 THz) bandwidth in this antenna coupled device.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2156-342X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1161
Permanent link to this record
 
 
Author Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M.
Title Performance of THz components based on microstrip PECVD SiNx technology Type Journal Article
Year 2017 Publication IEEE Trans. THz Sci. Technol. Abbreviated Journal (down) IEEE Trans. THz Sci. Technol.
Volume 7 Issue 6 Pages 765-771
Keywords transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices
Abstract We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2156-342X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1294
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Author Lobanov, Y.; Shcherbatenko, M.; Finkel, M.; Maslennikov, S.; Semenov, A.; Voronov, B. M.; Rodin, A. V.; Klapwijk, T. M.; Gol'tsman, G. N.
Title NbN hot-electron-bolometer mixer for operation in the near-IR frequency range Type Journal Article
Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal (down) IEEE Trans. Appl. Supercond.
Volume 25 Issue 3 Pages 2300704 (1 to 4)
Keywords HEB mixer, IR, optical antenna
Abstract Traditionally, hot-electron-bolometer (HEB) mixers are employed for THz and “super-THz” heterodyne detection. To explore the near-IR spectral range, we propose a fiber-coupled NbN film based HEB mixer. To enhance the incident-light absorption, a quasi-antenna consisting of a set of parallel stripes of gold is used. To study the antenna effect on the mixer performance, we have experimentally studied a set of devices with different size of the Au stripe and spacing between the neighboring stripes. With use of the well-known isotherm technique we have estimated the absorption efficiency of the mixer, and the maximum efficiency has been observed for devices with the smallest pitch of the alternating NbN and NbN-Au stripes. Also, a proper alignment of the incident Eâƒ<2014>-field with respect to the stripes allows us to improve the coupling further. Studying IV-characteristics of the mixer under differently-aligned Eâƒ<2014>-field of the incident radiation, we have noticed a difference in their shape. This observation suggests that a difference exists in the way the two waves with orthogonal polarizations parallel and perpendicular Eâƒ<2014>-field to the stripes heat the electrons in the HEB mixer. The latter results in a variation in the electron temperature distribution over the HEB device irradiated by the two waves.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 952
Permanent link to this record
 
 
Author Seliverstov, S.; Maslennikov, S.; Ryabchun, S.; Finkel, M.; Klapwijk, T. M.; Kaurova, N.; Vachtomin, Yu.; Smirnov, K.; Voronov, B.; Goltsman, G.
Title Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer Type Journal Article
Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal (down) IEEE Trans. Appl. Supercond.
Volume 25 Issue 3 Pages 2300304
Keywords HEB detector responsivity, HEB model, numerical calculations, numerical model
Abstract We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 953
Permanent link to this record
 
 
Author Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M.
Title Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films Type Journal Article
Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal (down) IEEE Trans. Appl. Supercond.
Volume 25 Issue 3 Pages 1-4
Keywords TiN MKID
Abstract We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1296
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Author Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G.
Title The electron-phonon relaxation time in thin superconducting titanium nitride films Type Journal Article
Year 2013 Publication Appl. Phys. Lett. Abbreviated Journal (down) Appl. Phys. Lett.
Volume 103 Issue 25 Pages 252602 (1 to 4)
Keywords disordered TiN films, electron-phonon relaxation time
Abstract We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159.
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Publisher Place of Publication Editor
Language Summary Language Original Title
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Notes Approved no
Call Number RPLAB @ kovalyuk @ Serial 941
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Author Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G.
Title Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation Type Journal Article
Year 2013 Publication Appl. Phys. Lett. Abbreviated Journal (down) Appl. Phys. Lett.
Volume 103 Issue 18 Pages 181121 (1 to 5)
Keywords carbon nanotubes, CNT, THz radiation, SiO2 substrate
Abstract We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1171
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Author Finkel, M.; Thierschmann, H. R.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M.
Title Branchline and directional THz coupler based on PECVD SiNx-technology Type Conference Article
Year 2016 Publication 41st IRMMW-THz Abbreviated Journal (down) 41st IRMMW-THz
Volume Issue Pages
Keywords microstrip, fixtures, coplanar waveguides, couplers, standards, probes, dielectrics
Abstract A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-2035 ISBN 978-1-4673-8485-8 Medium
Area Expedition Conference
Notes Approved no
Call Number 7758586 Serial 1295
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