| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. |
Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors |
2018 |
Appl. Phys. Lett. |
112 |
141101 (1 to 5) |
| Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. |
Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation |
2021 |
Adv. Electron. Mater. |
7 |
2000872 |
| Dieleman, Piter |
Fundamental limitations of THz niobium and niobiumnitride SIS mixers |
1998 |
|
|
|
| Shitov, S. V.; Inatani, J.; Shan, W.-L.; Takeda, M; Wang, Z.; Uvarov, A. V.; Ermakov, A. B.; Uzawa, Y. |
Measurement of emissivity of the ALMA antenna panel at 840 GHz using NbN-based heterodyne SIS receiver |
2008 |
Proc. 19th Int. Symp. Space Terahertz Technol. |
|
263-266 |
| Karpov, A.; Miller, D.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J. |
Broadband SIS mixer for 1 THz Band |
2009 |
Proc. 20th Int. Symp. Space Terahertz Technol. |
|
35-35 |
