Author |
Title |
Year |
Publication |
Volume |
Pages |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
1971 |
JETP Lett. |
14 |
185-186 |
Gershenzon, E. M.; Gol'tsman, G. N. |
Transitions of electrons between excited states of donors in germanium |
1971 |
JETP Lett. |
14 |
63-65 |
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
1971 |
JETP Lett. |
14 |
241 |
Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
2001 |
Jetp Lett. |
73 |
44-47 |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Absorption spectra in electron transitions between excited states of impurities in germanium |
1975 |
JETP Lett. |
22 |
95-97 |
Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
1995 |
JETP |
80 |
960-964 |
Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G. |
New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect |
2001 |
J. Vac. Sci. Technol. B |
19 |
2766-2769 |
Zorin, M.; Lindgren, M.; Danerud, M.; Karasik, B.; Winkler, D.; Gol'tsman, G.; Gershenzon, E. |
Nonequilibrium and bolometric responses of YBaCuO thin films to high-frequency modulated laser radiation |
1995 |
J. Supercond. |
8 |
11-15 |
Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses |
1994 |
J. Supercond. |
7 |
751-755 |
Sergeev, A.; Semenov, A.; Trifonov, V.; Karasik, B.; Gol'tsman, G.; Gershenzon, E. |
Heat transfer in YBaCuO thin film/sapphire substrate system |
1994 |
J. Supercond. |
7 |
341-344 |