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Yagoubov, P., Hübers, H. - W., Gol’tsman, G., Semenov, A., Gao, J., Hoogeveen, R., et al. (2001). Hot-electron bolometer mixers – technology for far-infrared heterodyne instruments in future atmospheric chemistry missions. In S. Buehler, & Berlin (Eds.), Proc. 3rd Int. Symp. Submillimeter Wave Earth Observation From Space (pp. 57–69). Logos-Verlag.
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Kuzin, A., Elmanov, I., Kovalyuk, V., An, P., & Goltsman, G. (2020). Silicon nitride focusing grating coupler for input and output light of NV-centers. In Proc. 32-nd EMSS (pp. 349–353).
Abstract: Here we presented the numerical results for the calculation of focusing grating coupler efficiency in the visible wavelength range. Using the finite element method, the optimal geometric parameters, including filling factor and grating period for a central wavelength of 637 nm, were found. Obtained results allow to input/output single-photon radiation from NV-centers, and can be used for research and development of a scalable on-chip quantum optical computing.
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Elmanov, I., Elmanova, A., Kovalyuk, V., An, P., & Goltsman, G. (2020). Integrated contra-directional coupler for NV-centers photon filtering. In Proc. 32-nd EMSS (pp. 354–360).
Abstract: We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds.
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Elmanov, I., Elmanova, A., Kovalyuk, V., An, P., & Goltsman, G. (2020). Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds. In Proc. 32-nd EMSS (pp. 344–348).
Abstract: The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength.
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Tovpeko, N. A., Trifonov, A. V., Semenov, A. V., Antipov, S. V., Kaurova, N. S., Titova, N. A., et al. (2019). Bandwidth performance of a THz normal metal TiN bolometer-mixer. In Proc. 30th Int. Symp. Space Terahertz Technol. (pp. 102–103).
Abstract: We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films.
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Bryerton, E., Percy, R., Bass, R., Schultz, J., Oluleye, O., Lichtenberger, A., et al. (2005). Receiver measurements of pHEB beam lead mixers on 3-μm silicon. In Proc. 30th IRMMW / 13th THz (pp. 271–272).
Abstract: We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.
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Ekström, H., Kroug, M., Belitsky, V., Kollberg, E., Olsson, H., Goltsman, G., et al. (1996). Hot electron mixers for THz applications. In E. J. Rolfe, & G. Pilbratt (Eds.), Proc. 30th ESLAB (pp. 207–210).
Abstract: We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.
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Tretyakov, I., Kaurova, N., Voronov, B. M., & Goltsman, G. N. (2018). About effect of the temperature operating conditions on the noise temperature and noise bandwidth of the terahertz range NbN hot-electron bolometers. In Proc. 29th Int. Symp. Space Terahertz Technol. (113).
Abstract: Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) and NbN bridge length are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb ≪ Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K.
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Sych, D., Shcherbatenko, M., Elezov, M., & Goltsman, G. N. (2018). Towards the improvement of the heterodyne receiver sensitivity beyond the quantum noise limit. In Proc. 29th Int. Symp. Space Terahertz Technol. (pp. 245–247).
Abstract: Noise reduction in heterodyne receivers of the terahertz range is an important issue for astronomical applications. Quantum fluctuations, also known as shot noise, prohibit errorless measurements of the amplitude of electro-magnetic waves, and introduce the so-called standard quantum limit (SQL) on the minimum error of the heterodyne measurements. Nowadays, the sensitivity of modern heterodyne receivers approaches the SQL, and the growing demand for the improvement of measurement precision stimulates a number of both theoretical and experimental efforts to design novel measurement techniques aimed at overcoming the SQL. Here we demonstrate the first steps towards the practical implementation of a sub-SQL quantum receiver. As the principal resources, it requires a highly efficient single-photon counting detector and an interferometer-based scheme for mixing the signal with a low-power local oscillator. We describe the idea of such receiver and its main components.
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Vachtomin, Y. B., Antipov, S. V., Kaurova, N. S., Maslennikov, S. N., Smirnov, K. V., Polyakov, S. L., et al. (2004). Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess. In Proc. 29th IRMMW / 12th THz (pp. 329–330). Karlsruhe, Germany.
Abstract: We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area.
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