|
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. |
Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors |
2018 |
Appl. Phys. Lett. |
112 |
141101 (1 to 5) |
|
|
Fedder, H.; Oesterwind, S.; Wick, M.; Olbrich, F.; Michler, P.; Veigel, T.; Berroth, M.; Schlagmüller, M. |
Characterization of electro-optical devices with low jitter single photon detectors – towards an optical sampling oscilloscope beyond 100 GHz |
2018 |
ECOC |
|
1-3 |
|
|
Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Moshkova, M.; Morozov, P.; Seleznev, V.; Smirnov, K. |
Photon-number-resolving SSPDs with system detection efficiency over 50% at telecom range |
2018 |
Proc. AIP Conf. |
1936 |
020019 |
|
|
Korneeva, Y. P.; Vodolazov, D. Y.; Semenov, A. V.; Florya, I. N.; Simonov, N.; Baeva, E.; Korneev, A. A.; Goltsman, G. N.; Klapwijk, T. M. |
Optical single photon detection in micron-scaled NbN bridges |
2018 |
arXiv |
|
|
|
|
Sidorova, M.; Semenov, A.; Korneev, A.; Chulkova, G.; Korneeva, Y.; Mikhailov, M.; Devizenko, A.; Kozorezov, A.; Goltsman, G. |
Electron-phonon relaxation time in ultrathin tungsten silicon film |
2018 |
arXiv |
|
|
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