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Author Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.
Title Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves Type Conference Article
Year 1986 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 50 Issue Pages 280-281
Keywords Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect
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Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0367-6755 ISBN Medium
Area Expedition Conference 3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985
Notes Approved no
Call Number Serial 1708
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Author Gershenzon, E. M.; Goltsman, G. N.
Title Zeeman effect in excited-states of donors in germanium Type Journal Article
Year 1972 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 6 Issue 3 Pages 509
Keywords Ge, donors, Zeeman effect
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Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1737
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Author Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N.
Title Temperature dependence of superconducting hot electron bolometers Type Conference Article
Year 2013 Publication Not published results: 24th international symposium on space terahertz technology Abbreviated Journal
Volume Issue Pages
Keywords HEB
Abstract (up)
Address Groningen,The Netherlands
Corporate Author Thesis
Publisher Place of Publication Editor
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Area Expedition Conference
Notes Approved no
Call Number Serial 1067
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Author Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A.
Title Response of carbon nanotube film transistor to the THz radiation Type Conference Article
Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 195 Issue Pages 05012 (1 to 2)
Keywords field-effect transistor, FET, carbon nanotube, CNT
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1317
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Author Goltsman, G. N.
Title Submillimeter superconducting receivers for astronomy, atmospheric studies and other applications Type Abstract
Year 2006 Publication 31nd IRMW / 14th ICTE Abbreviated Journal 31nd IRMW / 14th ICTE
Volume Issue Pages 177
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Area Expedition Conference Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics
Notes Approved no
Call Number Serial 1443
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Author Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M.
Title Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz Type Journal Article
Year 2001 Publication Physics of Vibrations Abbreviated Journal Physics of Vibrations
Volume 9 Issue 4 Pages 242-245
Keywords NbN HEB mixers
Abstract (up)
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1069-1227 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1550
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Author Svechnikov, S. I.; Antipov, S. V.; Vakhtomin, Y. B.; Goltsman, G. N.; Gershenzon, E. M.; Cherednichenko, S. I.; Kroug, M.; Kollberg, E.
Title Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers Type Journal Article
Year 2001 Publication Physics of Vibrations Abbreviated Journal Physics of Vibrations
Volume 9 Issue 3 Pages 205-210
Keywords NbN HEB mixers
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1069-1227 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1551
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S.
Title Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range Type Conference Article
Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.
Volume Issue Pages 55-58
Keywords 2DEG, AlGaAs/GaAs heterostructures
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Notes Approved no
Call Number Serial 1602
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Author Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title Prospects for using high-temperature superconductors to create electron bolometers Type Journal Article
Year 1989 Publication Pisma v Zhurnal Tekhnicheskoi Fiziki Abbreviated Journal Pisma v Zhurnal Tekhnicheskoi Fiziki
Volume 15 Issue 14 Pages 88-93
Keywords HTS HEB
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Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0320-0116 ISBN Medium
Area Expedition Conference
Notes Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров Approved no
Call Number Serial 1693
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Author Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of submillimeter impurity and exciton photoconduction in Ge Type Journal Article
Year 1982 Publication Optics and Spectroscopy Abbreviated Journal Optics and Spectroscopy
Volume 52 Issue 4 Pages 454-455
Keywords Ge, exciton photoconduction
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Area Expedition Conference
Notes Approved no
Call Number Serial 1715
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I.
Title Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors Type Conference Article
Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 42 Issue 6 Pages 1231-1234
Keywords spectrum, semiconductors, admixtures, strong magnetic-field
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Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia Place of Publication Editor
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Area Expedition Conference
Notes Approved no
Call Number blagosklonskaya1978effect Serial 1724
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Author Gershenzon, E. M.; Goltsman, G. N.; Orlov, L.
Title Investigation of population and ionization of donor excited states in Ge Type Conference Article
Year 1976 Publication Physics of Semiconductors Abbreviated Journal Physics of Semiconductors
Volume Issue Pages 631-634
Keywords Ge, donor excited states
Abstract (up)
Address Amsterdam
Corporate Author Thesis
Publisher North-Holland Publishing Co. Place of Publication Editor
Language Summary Language Original Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1732
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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G.
Title Investigation of excited donor states in GaAs Type Journal Article
Year 1974 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 7 Issue 10 Pages 1248-1250
Keywords GaAs, excited donor states
Abstract (up)
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Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1733
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Author Minaeva, O.; Divochiy, A.; Korneev, A.; Sergienko, A. V.; Goltsman, G. N.
Title High speed infrared photon counting with photon number resolving superconducting single-photon detectors (SSPDs) Type Conference Article
Year 2009 Publication CLEO/Europe – EQEC Abbreviated Journal CLEO/Europe – EQEC
Volume Issue Pages
Keywords SSPD, SNSPD
Abstract (up) A review of development and characterization of the nanostructures consisting of several meander sections, all connected in parallel was presented. Such geometry leads to a significant decrease of the kinetic inductance, without a decrease of the SSPD active area. A new type of SSPDs possess the QE of large-active- area devices, but, simultaneously, allows achieving short response times and the GHz-counting rate. This new generation of superconducting detectors has another significant advantage for quantum key distribution, they have a photon number resolving capability and can distinguish more photons.
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Notes Approved no
Call Number Serial 1399
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Author Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V.
Title Electron-phonon interaction in ultrathin Nb films Type Journal Article
Year 1990 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 70 Issue 3 Pages 505-511
Keywords Nb films
Abstract (up) A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.

1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.
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Notes Approved no
Call Number Serial 241
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