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Author Tarkhov, M.; Claudon, J.; Poizat, J. Ph.; Korneev, A.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Semenov, A. V.; Gol'tsman, G.
Title Ultrafast reset time of superconducting single photon detectors Type Journal Article
Year 2008 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 92 Issue 24 Pages 241112 (1 to 3)
Keywords SSPD, SNSPD
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Notes Approved no
Call Number Serial 429
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Author Gao, J. R.; Hovenier, J. N.; Yang, Z. Q.; Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Klapwijk, T. M.; Adam, A. J. L.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L.
Title Terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer Type Journal Article
Year 2005 Publication Appl. Phys. Lett. Abbreviated Journal
Volume Issue 86 Pages
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Notes art.num. 244104 Approved no
Call Number RPLAB @ s @ qc_lasers_gao Serial 368
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Author Richards, P. L.; Shen, T. M.; Harris, R. E.; Lloyd, F. L.
Title Quasiparticle heterodyne mixing in SIS tunnel junctions Type Journal Article
Year 1979 Publication Appl. Phys. Lett. Abbreviated Journal
Volume 34 Issue 5 Pages 345-347
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Call Number MSPU @ s @ SIS_mixing_qua_part_Richards_1979 Serial 222
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Author Prober, D. E.
Title Superconducting terahertz mixer using a transition-edge microbolometer Type Journal Article
Year 1993 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 62 Issue 17 Pages 2119-2121
Keywords HEB mixer, NbN, TES
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Call Number Serial 244
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Author Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V.
Title Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures Type Journal Article
Year 2001 Publication Appl. Phys. Lett. Abbreviated Journal
Volume 79 Issue Pages 2049-2051
Keywords HEB detector, FIR, far infrared
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Call Number RPLAB @ s @ heb_eph_interaction_Gershenzon Serial 315
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Author Jackson, B. D.; Baryshev, A. M.; de Lange, G.; Gao, J. R.; Shitov, S. V.; Iosad, N. N.; Klapwijk, T. M.
Title Low-noise 1 THz superconductor-insulator-superconductor mixer incorporating a NbTiN/SiO2/Al tuning circuit Type Journal Article
Year 2001 Publication Appl. Phys. Lett. Abbreviated Journal
Volume 79 Issue 3 Pages 436
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Notes Approved no
Call Number RPLAB @ s @ sis_Jackson_2001 Serial 314
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Author Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N.
Title Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)] Type Journal Article
Year 2010 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 96 Issue 8 Pages 089901
Keywords SSPD, SNSPD, erratum
Abstract (up) A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered.
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Call Number Serial 1395
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Author Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A.
Title Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm Type Journal Article
Year 2010 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 97 Issue 13 Pages 131907 (1 to 3)
Keywords SSPD, SNSPD, InAsP/InP quantum dots
Abstract (up) By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364.
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Notes Approved no
Call Number Serial 1238
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Author Fetterman, H. R.; Tannenwald, P. E.; Clifton, B. J.; Parker, C. D.; Fitzgerald, W. D.; Erickson, N. R.
Title Far-ir heterodyne radiometric measurements with quasioptical Schottky diode mixers Type Journal Article
Year 1978 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 33 Issue 2 Pages 151-154
Keywords Schottky
Abstract (up) Frequency countings close to a phase locked zone in an electronic receiver show a 1/f power spectral density. The noise scaling versus the frequency deviation and the open loop gain are found from Adler's model of the phase locked loop. This fully agrees with experiments performed at 5 MHz on a receiver with a Schottky diode mixer and a low pass filter. The 1/f amplitude and frequency noise due to the whole set of (sub)harmonics is explained from a nonlinear mapping, with a coupling coefficient related to the structure of prime numbers.
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Notes Approved no
Call Number Serial 587
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Author Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D.
Title Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors Type Journal Article
Year 2018 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 112 Issue 14 Pages 141101 (1 to 5)
Keywords graphene field effect transistors, FET
Abstract (up) Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions.
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Call Number Serial 1309
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Author Shcherbatenko, M.; Elezov, M.; Manova, N.; Sedykh, K.; Korneev, A.; Korneeva, Y.; Dryazgov, M.; Simonov, N.; Feimov, A.; Goltsman, G.; Sych, D.
Title Single-pixel camera with a large-area microstrip superconducting single photon detector on a multimode fiber Type Journal Article
Year 2021 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 118 Issue 18 Pages 181103
Keywords NbN SSPD, SNSPD
Abstract (up) High sensitivity imaging at the level of single photons is an invaluable tool in many areas, ranging from microscopy to astronomy. However, development of single-photon sensitive detectors with high spatial resolution is very non-trivial. Here we employ the single-pixel imaging approach and demonstrate a proof-of-principle single-pixel single-photon imaging setup. We overcome the problem of low light gathering efficiency by developing a large-area microstrip superconducting single photon detector coupled to a multi-mode optical fiber interface. We show that the setup operates well in the visible and near infrared spectrum, and is able to capture images at the single-photon level.

We thank Philipp Zolotov and Pavel Morozov for NbN film fabrication, ARC coating, and fiber coupling of the detector. We also thank Swabian Instruments GmbH and Dr. Helmut Fedder personally for the kindly provided experimental equipment (Time Tagger Ultra 8). The work in the part of SNSPD research and development was supported by the Russian Foundation for Basic Research Project No. 18-29-20100. The work in the part of the optical setup and imaging was supported by Russian Foundation for Basic Research Project No. 20-32-51004.
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Notes Approved no
Call Number Serial 1770
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Author Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D.
Title 9.6 μm wavelength mixing in a patterned YBa2Cu3O7‐δ thin film Type Journal Article
Year 1996 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 68 Issue 10 Pages 1418-1420
Keywords YBCO HTS HEB mixers
Abstract (up) Hot‐electron bolometric (HEB) mixing of 9.6 μm infrared radiation from two lasers in high‐quality YBa2Cu3O7−δ (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to ∼150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be ∼25 dB, of which 13 dB was due to the coupling loss. The HEB mixer is very promising for use in heterodyne receivers within the whole infrared range.
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Notes Approved no
Call Number Serial 1613
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Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E.
Title Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies Type Journal Article
Year 1998 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 73 Issue 19 Pages 2814-2816
Keywords NbN HEB mixers, noise temperature, local oscillator power
Abstract (up) In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW.
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Call Number Serial 911
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Author Kawamura, J.; Blundell, R.; Tong, C.-yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S.
Title Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths Type Journal Article
Year 1997 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 70 Issue 12 Pages 1619-1621
Keywords NbN HEB mixers
Abstract (up) Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell.
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Notes Approved no
Call Number Serial 1599
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Author Lindgren, M.; Zorin, M. A.; Trifonov, V.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol'tsman, G. N.; Gershenzon, E. M.
Title Optical mixing in a patterned YBa2Cu3O7-δ thin film Type Journal Article
Year 1994 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 65 Issue 26 Pages 3398-3400
Keywords YBCO HTS HEB mixer, bandwidth
Abstract (up) Mixing of 1.56 µm infrared radiation from two lasers in a high quality YBa2Cu3O7-δ thin film, patterned to parallel strips, was demonstrated. A mixer bandwidth of 18 GHz, limited by the measurement system, was obtained. A model based on nonequilibrium electron heating gives a good fit to the data and predicts an intrinsic mixer bandwidth in excess of 100 GHz, operating in the whole infrared spectrum. Reduction of bolometric effects and ways to decrease the conversion loss of the mixer is discussed. The minimum conversion loss is expected to be ~10 dB.
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Notes Approved no
Call Number Serial 251
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