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Author Kaganov, M. L.; Lifshitz, I. M.; Tanatarov, L. V.
Title Relaxation between electrons and the crystalline lattice Type Journal Article
Year 1957 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 4 Issue 2 Pages 173-178
Keywords HEB, nonlinear equations, numerical model
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Call Number Serial 894
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Observation of the free-exciton spectrum at submillimeter wavelengths Type Journal Article
Year 1972 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 16 Issue 4 Pages 161-162
Keywords Ge, energy spectrum, free excitons
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Call Number Serial 1736
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Author Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title Heating of quasiparticles in a superconducting film in the resistive state Type Journal Article
Year 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 34 Issue 5 Pages 268-271
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Call Number Serial 1716
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Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state Type Journal Article
Year 1982 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 36 Issue 7 Pages 296-299
Keywords HEB
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Notes Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии Approved no
Call Number Serial 1717
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Cross section for binding of free carriers into excitons in germanium Type Journal Article
Year 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 33 Issue 11 Pages 574
Keywords Ge, excitons, photoconductivity
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Call Number Serial 1718
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Author Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G.
Title Carrier lifetime in excited states of shallow impurities in germanium Type Journal Article
Year 1977 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 25 Issue 12 Pages 539-543
Keywords Ge, shallow impurities, excited states
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Call Number Serial 1726
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Author Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I.
Title Intervalley cyclotron-impurity resonance of electrons in n-Ge Type Journal Article
Year 1976 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 24 Issue 3 Pages 125-128
Keywords n-Ge, cyclotron-impurity resonance
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Call Number Serial 1730
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Author Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G.
Title Energy spectrum of free excitons in germanium Type Journal Article
Year 1973 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 18 Issue 3 Pages 93
Keywords Ge, free excitons, energy spectrum
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Call Number Serial 1734
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P.
Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 5 Pages 185-186
Keywords Ge, Si, neutral impurity atom, binding energy
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Call Number Serial 1739
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Author Gershenzon, E. M.; Gol'tsman, G. N.
Title Transitions of electrons between excited states of donors in germanium Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 2 Pages 63-65
Keywords Ge, donors, excited states
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Call Number Serial 1740
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M.
Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 6 Pages 241
Keywords Ge, gamma irradiation, defects, impurities
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Call Number Serial 1742
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Author Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G.
Title Absorption spectra in electron transitions between excited states of impurities in germanium Type Journal Article
Year 1975 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 22 Issue 4 Pages 95-97
Keywords Ge, impurities, excited states, absorption spectra
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Call Number Serial 1773
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Author Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R.
Title Character of submillimeter photoconductivity in n-lnSb Type Journal Article
Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 49 Issue 1 Pages 121-128
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Abstract (up) A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8).
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Call Number RPLAB @ phisix @ Serial 985
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Author Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V.
Title Electron-phonon interaction in ultrathin Nb films Type Journal Article
Year 1990 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 70 Issue 3 Pages 505-511
Keywords Nb films
Abstract (up) A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.

1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.
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Call Number Serial 241
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Population and lifetime of excited states of shallow impurities in Ge Type Journal Article
Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 49 Issue 2 Pages 355-362
Keywords Ge, photothermal ionization, shallow impurities
Abstract (up) An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
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Notes Approved no
Call Number Serial 1719
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