| Records |
| Author |
Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M. |
| Title |
Picosecond hot-electron energy relaxation in NbN superconducting photodetectors |
Type |
Journal Article |
| Year |
2000 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
76 |
Issue |
19 |
Pages |
2752-2754 |
| Keywords |
NbN HEB detectors, two-temperature model, IF bandwidth |
Abstract  |
We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect. |
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0003-6951 |
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856 |
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Il'in, K. S.; Cherednichenko, S. I.; Gol'tsman, G. N.; Currie, M.; Sobolewski, R. |
| Title |
Comparative study of the bandwidth of phonon-cooled NbN hot-electron bolometers in submillimeter and optical wavelength ranges |
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Conference Article |
| Year |
1998 |
Publication |
Proc. 9th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 9th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
323-330 |
| Keywords |
NbN HEB mixers |
| Abstract |
We report the results of the bandwidth measurements of NbN hot-electron bolometers, perfomied in the terahertz frequency domain at 140 GHz and 660 GHz and in time domain in the optical range at the wavelength of 395 nm.. Our studies were done on 3.5-nm-thick NbN films evaporated on sapphire substrates and patterned into ilin-size microbridges. In order to measure the gain bandwidth, we used two identical BWOs (140 or 660 GHz), one functioning as a local oscillator and the other as a signal source. The bandwidth we achieved was 3.5-4 GHz at 4.2 K with the optimal LO and DC biases. Time-domain measurements with a resolution below 300 fs were performed using an electro-optic sampling system, in the temperature range between 4.2 K to 9 K at various values of the bias current and optical power. The obtained response time of the NbN hot-electron bolometer to —100- fs-wide Ti:sapphire laser pulses was about 27 ps, what corresponds to the 5.9 GHz gain bandwidth. |
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1590 |
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Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
| Title |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
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Conference Article |
| Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Pages |
290-302 |
| Keywords |
NbN HEB mixers, fabrication process |
| Abstract |
We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Charlottesville, Virginia, USA |
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266 |
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Cherednichenko, S.; Rönnung, F.; Gol'tsman, G.; Kollberg, E.; Winkler, D. |
| Title |
YBa2Cu3O7−δ hot-electron bolometer mixer |
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Journal Article |
| Year |
2000 |
Publication |
Phys. C: Supercond. |
Abbreviated Journal |
Phys. C: Supercond. |
| Volume |
341-348 |
Issue |
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Pages |
2653-2654 |
| Keywords |
YBCO HTS HEB mixers |
| Abstract |
We present an investigation of hot-electron bolometric mixer based on YBa2Cu3O7−δ (YBCO) superconducting thin film. Mixer conversion loss, absorbed local oscillator power and intermediate frequency bandwidth was measured at the local oscillator frequency 600 GHz. The fabrication technique for nanoscale YBCO hot-electron bolometer (HEB) mixer integrated into planar antenna structure is described. |
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0921-4534 |
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1552 |
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Cherednichenko, S.; Rönnung, F.; Gol’tsman, G.; Kollberg, E.; Winkler, D. |
| Title |
YBa2Cu3O7-δ hot-electron bolometer mixer at 0.6 THz |
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Conference Article |
| Year |
2000 |
Publication |
Proc. 11th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 11th Int. Symp. Space Terahertz Technol. |
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Pages |
517-522 |
| Keywords |
YBCO HTS HEB mixers |
| Abstract |
We present an investigation of hot-electron bolometric mixer based on a YBa 2 Cu 3 O 7-δ (YBCO) superconducting thin film. Mixer conversion loss of –46 dB, absorbed local oscillator power and intermediate frequency bandwidth were measured at the local oscillator frequency 0.6 THz. The fabrication technique for nanoscale YBCO hot-electron bolometer (HEB) mixer integrated with a planar antenna structure is described. |
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1556 |
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