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Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. |
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Title |
Механизм преобразования частоты в n-InSb-смесителе |
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Journal Article |
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1991 |
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Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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25 |
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11 |
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1986-1998 |
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n-InSb mixer |
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Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн. |
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1753 |
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Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б. |
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Title |
Кинетические явления в компенсированном n-InSb при низких температурах |
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1990 |
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Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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24 |
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1 |
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3-24 |
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compensated n-InSb, impurities |
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Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb. |
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1756 |
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Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.; Гусинский, Э. Н.; Литвак-Горская, Л. Б. |
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Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла |
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1990 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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24 |
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12 |
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2145-2150 |
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Hall constant, concentration of impurities, p-Si |
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На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая. |
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1754 |
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Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. |
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Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ |
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1986 |
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Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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20 |
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1 |
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99-103 |
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n-Ge, Hubbard upper zone conductivity, negative magnetoresistance |
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В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. |
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1759 |
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de Lange, Gert; Krieg, Jean-Michel; Honingh, Netty; Karpov, Alexandre; Cherednichenko, Sergey |
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Performance of the HIFI flight mixers |
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2008 |
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Proc. 19th Int. Symp. Space Terahertz Technol. |
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98-105 |
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HEB mixer applications, HEB applications |
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We summarize the technology and final results of the superconducting heterodyne SIS and HEB mixers that are developed for the HIFI instrument. Within HIFI 7 frequency bands cover the frequency range from 480 GHz to 1910 GHz. We describe the different device technologies and optical coupling schemes that are used to cover the frequency bands. The efforts of the different mixer teams that participate in HIFI have contributed to an instrument that will have unprecedented sensitivity and frequency coverage. |
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Groningen |
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1074 |
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Sidorova, M.; Semenov, A.; Hübers, H.-W.; Kuzmin, A.; Doerner, S.; Ilin, K.; Siegel, M.; Charaev, I.; Vodolazov, D. |
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Timing jitter in photon detection by straight superconducting nanowires: Effect of magnetic field and photon flux |
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2018 |
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Phys. Rev. B |
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Phys. Rev. B |
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98 |
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13 |
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134504 (1 to 14) |
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SNSPD, NbN namowires |
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We studied the effects of the external magnetic field and photon flux on timing jitter in photon detection by straight superconducting NbN nanowires. At two wavelengths 800 and 1560 nm, statistical distribution in the appearance times of photon counts exhibits Gaussian shape at small times and an exponential tail at large times. The characteristic exponential time is larger for photons with smaller energy and increases with external magnetic field while variations in the Gaussian part of the distribution are less pronounced. Increasing photon flux drives the nanowire from the discrete quantum detection regime to the uniform bolometric regime that averages out fluctuations of the total number of nonequilibrium electrons created by the photon and drastically reduces jitter. The difference between standard deviations of Gaussian parts of distributions for these two regimes provides the measure for the strength of electron-number fluctuations; it increases with the photon energy. We show that the two-dimensional hot-spot detection model explains qualitatively the effect of magnetic field. |
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2469-9950 |
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1842 |
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Semenov, A.; Richter, H.; Smirnov, A.; Günther, B.; Hübers, H.-W.; Il’in, K.; Siegel, M.; Gol’tsman, G.; Drakinskiy, V.; Merkel, H.; Karamarkovic, J. |
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Development of HEB mixers for GREAT and for security screening |
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2007 |
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Proc. 18th Int. Symp. Space Terahertz Technol. |
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Proc. 18th Int. Symp. Space Terahertz Technol. |
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184 |
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NbN HEB mixers, GREAT |
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We report the study on the quasioptical coupling efficiency and the gain bandwidth of NbN hot-electron bolometer mixers developed for the 4.7 THz channel of the German receiver for Astronomy at THz-frequencies (GREAT) and for security screening at subterahertz frequencies. Radiation coupling efficiency and directive properties of integrated lens antennas with log-spiral, log-periodic and double-slot planar feeds coupled to a hot-electron bolometer were experimentally studied at frequencies from 1 THz to 6 THz and compared with simulations based on the method of moments and the physical-optics ray tracing. For all studied antennas the modeled spectral dependence of the coupling efficiency fits to the experimental data obtained with both Fourier transform spectroscopy and noise temperature measurements only if the complex impedance of the bolometer is explicitly taken into account. Our experimental data did not indicate any noticeable contribution of the quantum noise to the system noise temperature. The experimentally observed deviation of the beam pattern from the model prediction increases with frequency and is most likely due to a non- ideality of the presently used lenses. Study of the intermediate frequency mixer gain at local oscillator (LO) frequencies between 2.5 THz and 0.3 THz showed an increase of the gain bandwidth at low LO frequencies that was understood as the contribution of the direct interaction of magnetic vortices with the radiation field. We have found that the non- homogeneous hot-spot model more adequately describes variation of the intermediate frequency bandwidth with the applied local oscillator power than any of uniform mixer models. The state-of-the-day performance of the GREAT 4.7-THz channel and the 0.8-THz security scanner will be presented. |
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1420 |
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Shurakov, Alexander; Maslennikov, Sergey; Tong, Cheuk-yu E.; Gol’tsman, Gregory |
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Performance of an HEB direct detector utilizing a microwave reflection readout scheme |
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2015 |
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Proc. 26th Int. Symp. Space Terahertz Technol. |
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Proc. 26th Int. Symp. Space Terahertz Technol. |
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HEB detector |
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We report the results of our study on the performance of a hot electron bolometric (HEB) direct detector, operated by a microwave pump. The HEB devices used in this work were made from NbN thin film deposited on high resistivity silicon with an in-situ fabrication process. The experimental setup employed is similar to the one described in [1]. The detector chips were glued to a silicon lens clamped to a copper holder mounted on the cold plate of a liquid helium cryostat. Thermal link between the lens and the holder was maintained by a thin indium shim. The HEBs were operated at a bath temperature of about 4.4 K. Conventional phonon pump, commonly realized by raising the bath temperature of the detector, was substituted by a microwave one. In this case, a CW microwave signal is injected to the device through a directional coupler connected directly to the detector holder. The power incident on the HEB device was typically 1-2 μW, and the pump frequency was in the range of 0.5-1.5 GHz. The signal sources were 2 black bodies held at temperatures of 295 K and 77 K. A chopper wheel placed in front of the cryostat window switched the input to the detector between the 2 sources. A modulation frequency of several kilohertz was chosen in order to reduce the effects of the HEB’s flicker noise. A cold mesh filter was used to define the input bandwidth of the detector. The reflected microwave signal from the HEB device was fed into a low noise amplifier, the output of which is connected to a room temperature Schottky microwave power detector. This Schottky detector, in conjunction with a lock-in amplifier, demodulated the input signal modulation from the copper wheel. As the input load was switched, the impedance of the HEB device at the microwave pump frequency also changed in response to the incident signal power variation. Therefore the reflected microwave power follows the incident signal modulation. The derived responsivity from this detection system nicely correlates with the HEB impedance. In order to provide a quantitative description of the impedance variation of the HEB device and the impact of a microwave pump, we have numerically solved the heat balance equations written for the NbN bridge and its surrounding thermal heat sink [2]. Our model also accounts for the impact of the operating frequency of the detector because of non-uniform absorption of low-frequency photons across the NbN bridge [3]. In our measurements we varied the signal source wavelength from 2 mm down to near infrared range, and hence we indirectly performed the impedance measurements at frequencies below, around and far beyond the superconducting gap. Preliminary results show good agreement between the experiment and theoretical prediction. Further measurements are still in progress. [1] A. Shurakov et al., “A Microwave Reflection Readout Scheme for Hot Electron Bolometric Direct Detector”, to appear in IEEE Trans. THz Sci. Tech., 2015. [2] S. Maslennikov, “RF heating efficiency of the terahertz superconducting hot-electron bolometer”, http://arxiv.org/pdf/1404.5276v5.pdf, 2014. [3] W. Miao et al., “Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges”, Appl. Phys. Let., 104, 052605, 2014. |
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Shurakov, Alexander; Tong, Cheuk-yu E.; Blundell, Raymond; Gol’tsman, Gregory |
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A microwave pumped HEB direct detector using a homodyne readout scheme |
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2014 |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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129 |
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waveguide NbN HEB detector, NEP |
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We report the results of our study on the noise performance of a fast THz detector based on the repurpose of hot electron bolometer mixer (HEB). Instead of operating with an elevated bath temperature, microwave power is injected into the HEB device, which enhances the sensitivity of the detector and at the same time provide a mechanism for reading out impedance changes of the device induced by the modulated incident THz radiation [1]. We have demonstrated an improvement of the detector’s optical noise equivalent power (NEP). Furthermore, by introducing a homodyne readout scheme based on a room temperature microwave mixer, the dynamic range of the detector is increased. The HEB devices used in this work were made of 4 nm thick NbN film. The detector chips were installed into a waveguide mixer block fitted with a corrugated horn, mounted on the cold plate of a liquid helium cryostat. The HEBs were operated at a bath temperature of 4.2 K. The signal beam was terminated on black bodies at ambient and liquid nitrogen temperatures. A chopper wheel placed in front of the cryostat window operating at a frequency of 1.48 kHz modulated the input load temperature of the detector. A cold mesh filter, centered at 830 GHz, was used to define the input signal power bandwidth. Microwave was injected through a broadband directional coupler inside the cryostat. Our experiments were mostly conducted at a pump frequency of 1.5 GHz. The reflected microwave power from the HEB device was fed into a cryogenic low noise amplifier (LNA). The output of the LNA was connected to the RF input port of a room temperature microwave mixer, which beat the reflected signal from the HEB using a copy of the original 1.5 GHz injection signal in a homodyne demodulation scheme. The amplitude of the detected power was measured by a lock-in amplifier, which was synchronized to the chopper frequency. Preliminary results yield an optical NEP of ~1 pW/ Hz 1/2 which corresponds to an improvement of a factor of 3 compared to [1], driven mainly by a lowering of the system noise floor. The dynamic range was also increased by similar amount. References 1. A. Shurakov et al. “A Microwave Pumped Hot Electron Bolometric Direct Detector,” submitted on Oct 18, 2013 to Appl. Phys. Let. |
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Shurakov, A.; Tong, C.-Y. E.; Blundell, R.; Kaurova, N.; Voronov, B.; Gol'tsman, G. |
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Microwave stabilization of a HEB mixer in a pulse-tube cryocooler |
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2013 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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23 |
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3 |
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1501504-1501504 |
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NbN HEB mixers |
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We report the results of our study of the stability of an 800 GHz hot electron bolometer (HEB) mixer cooled with a pulse-tube cryocooler. Pulse-tube cryocoolers introduce temperature fluctuations as well as mechanical vibrations at a frequency of ~1 Hz, both of which can cause receiver gain fluctuations at that frequency. In our system, the motor of the cryocooler was separated from the cryostat to minimize mechanical vibrations, leaving thermal effects as the dominant source of the receiver gain fluctuations. We measured root mean square temperature variations of the 4 K stage of ~7 mK. The HEB mixer was pumped by a solid state local oscillator at 810 GHz. The root mean square current fluctuations at the low noise operating point (1.50 mV, 56.5 μA) were ~0.12 μA, and were predominantly due to thermal fluctuations. To stabilize the bias current, microwave radiation was injected to the HEB mixer. The injected power level was set by a proportional-integral-derivative controller, which completely compensates for the bias current oscillations induced by the pulse-tube cryocooler. Significant improvement in the Allan variance of the receiver output power was obtained, and an Allan time of 5 s was measured. |
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