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Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. |
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Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ |
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1986 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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20 |
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1 |
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99-103 |
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n-Ge, Hubbard upper zone conductivity, negative magnetoresistance |
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В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. |
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1759 |
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Karpov, A.; Miller, D.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J. |
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Title |
Broadband SIS mixer for 1 THz Band |
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2009 |
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Proc. 20th Int. Symp. Space Terahertz Technol. |
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35-35 |
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SIS mixer, noise temperature |
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We report the development of a low noise and broadband SIS mixer aimed for 1 THz channel of the Caltech Airborne Submillimeter Interstellar Medium Investigations Receiver (CASIMIR), designed for the Stratospheric Observatory for Far Infrared Astronomy, (SOFIA). The mixer uses an array of 0.24 µm² Nb/Al-AlN/NbTiN SIS junctions with critical current density of 30-50 KA/cm². The junctions are shaped in order to optimize the suppression of the Josephson DC currents. We are using a double slot planar antenna to couple the mixer chip with the telescope beam. The RF matching microcircuit is made using Nb and gold films. The mixer IF circuit is designed to cover 4 – 8 GHz band. A test receiver with the new mixer has a low noise operation in a 0.87 – 1.12 THz band. The minimum DSB receiver noise measured at 1 THz is 260 K (Y=1.64), apparently the lowest reported up to date. The receiver noise corrected for the loss in the LO injection beam splitter and in the cryostat window is 200 K. The combination of a broad operation band of about 250 GHz with a low receiver noise is making the new mixer a useful element for application at SOFIA. We will discuss the prospective of a further improvement of the sensitivity and extension of the upper frequency of operation of SIS mixer. |
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Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. |
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The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts |
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2018 |
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Materials Today: Proc. |
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Materials Today: Proc. |
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5 |
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13 |
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27301-27306 |
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graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor |
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We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface. |
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2214-7853 |
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1316 |
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Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
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Graphene-layer and graphene-nanoribbon FETs as THz detectors |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051054 |
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field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
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We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
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1742-6588 |
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1300 |
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Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
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Relaxation of the resistive superconducting state in boron-doped diamond films |
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2016 |
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Phys. Rev. B |
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Phys. Rev. B |
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93 |
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6 |
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064506 |
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boron-doped diamond films, resistive superconducting state, relaxation time |
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We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. |
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1167 |
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Ozhegov, R. V.; Gorshkov, K. N.; Gol'tsman, G. N.; Kinev, N. V.; Koshelets, V. P. |
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The stability of a terahertz receiver based on a superconducting integrated receiver |
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2011 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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24 |
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3 |
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035003 |
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SIS mixer, SIR, stability |
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We present the results of stability testing of a terahertz radiometer based on a superconducting receiver with a SIS tunnel junction as the mixer and a flux-flow oscillator as the local oscillator. In the continuum mode, the receiver with a noise temperature of 95 K at 510 GHz measured over the intermediate frequency (IF) passband of 4-8 GHz offered a noise equivalent temperature difference of 10 ± 1 mK at an integration time of 1 s. We offer a method to significantly increase the integration time without the use of complex measurement equipment. The receiver observed a strong signal over a final detection bandwidth of 4 GHz and offered an Allan time of 5 s. |
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RPLAB @ gujma @ |
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705 |
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Billade, Bhushan; Belitsky, Victor; Pavolotsky, Alexey; Lapkin, Igor; Kooi, Jacob |
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ALMA band 5 (163-211 GHz) sideband separation mixer |
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2009 |
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Proc. 20th Int. Symp. Space Terahertz Technol. |
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19-23 |
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SIS mixer, noise temperature, ALMA, band 5 |
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We present the design of ALMA Band 5 sideband separation SIS mixer and experimental results for the double side band mixer and first measurement results 2SB mixer. In this mixer, the LO injection circuitry is integrated on the mixer substrate using a directional coupler, combining microstrip lines with slot-line branches in the ground plane. The isolated port of the LO coupler is terminated by wideband floating elliptical termination. The mixer employs two SIS junctions with junction area of 3 µm² each, in the twin junction configuration, followed by a quarter wave transformer to match the RF probe. 2SB mixer uses two identical but mirrored chips, whereas each DSB mixer has the same end-piece configuration. The 2S mixer has modular design such that DSB mixers are measured independently and then integrated into 2SB simply by placing around the middle piece. Measurements of the DSB mixer show noise temperature of around 40K over the entire band. 2SB mixer is not fully characterized yet, however, preliminary measurement indicates SSB (un-corrected) noise temperature of 80K. |
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Samsonova, Alena; Zolotov, Philipp; Baeva, Elmira; Lomakin, Andrey; Titova, Nadezhda; Kardakova, Anna; Goltsman, Gregory |
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Signatures of surface magnetic disorder in thin niobium films |
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2021 |
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IEEE Trans. Appl. Supercond. |
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1-1 |
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Temperature measurement, Temperature dependence, Superconducting magnets, Superconducting transition temperature, Substrates, Resistance, Scattering |
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We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder (kFl 150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm-2, which is in agreement with the previously reported data for Nb films. |
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1162 |
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Uzawa, Y.; Kojima, T.; Kroug, M.; Takeda, M.; Candotti, M.; Fujii, Y.; Shan, W.-L.; Kaneko, K.; Shitov, S.; Wang, M.-J. |
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Development of the 787-950 GHz ALMA band 10 cartridge |
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Conference Article |
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2009 |
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Proc. 20th Int. Symp. Space Terahertz Technol. |
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12-12 |
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SIS mixer, noise temperature, ALMA, band 10 |
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We are developing the Atacama Large Millimeter/Submillimeter Array (ALMA) Band 10 (787-950 GHz) receiver cartridge. The incoming beam from the 12-m antenna is reflected by a pair of two ellipsoidal mirrors placed in the cartridge, and then split into two orthogonal polarizations by a free-standing wire-grid. Each beam enters a corrugated feed horn attached to a double-side-band (DSB) mixer block. The mixer uses a full-height waveguide and an NbTiN- or NbN-based superconductor-insulator-superconductor (SIS) mixer chip. We are testing the following three types of mixer chips: 1) Nb SIS junctions + NbTiN/SiO2/Al tuning circuits on a quartz substrate, 2) Nb SIS junctions + NbN/SiO2/Al tuning circuits on an MgO substrate, and 3) NbN SIS junctions + NbN or NbTiN tuning circuits on an MgO substrate. The IF system uses a 4-12-GHz cooled low-noise InP-based MMIC amplifier developed by Caltech. So far, the type 1) has shown the best performance. At LO frequencies from 800 to 940 GHz, the mixer noise temperatures measured by using the standard Y-factor method were below 240 K at an operating physical temperature of 4 K. The lowest noise temperature, 169 K, was obtained at the center frequency of the band 10, as designed. These well-developed technologies will be implemented in the band 10 cartridge to achieve the ALMA specifications. |
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Shein, K. V.; Zarudneva, A. A.; Emel’yanova, V. O.; Logunova, M. A.; Chichkov, V. I.; Sobolev, A.S.; Zav’yalov, V. V.; Lehtinen, J. S.; Smirnov, E. O.; Korneeva, Y. P.; Korneev, A. A.; Arutyunov, K. Y. |
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Superconducting microstructures with high impedance |
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2020 |
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Phys. Solid State |
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Phys. Solid State |
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62 |
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9 |
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1539-1542 |
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superconducting channels, SIS, inetic inductance, tunneling contacts, high impedance |
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The transport properties of two types of quasi-one-dimensional superconducting microstructures were investigated at ultra-low temperatures: the narrow channels close-packed in the shape of meander, and the chains of tunneling contacts “superconductor-insulator-superconductor.” Both types of the microstructures demonstrated high value of high-frequency impedance and-or the dynamic resistance. The study opens up potential for using of such structures as current stabilizing elements with zero dissipation. |
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